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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
S. A. Bogdanov, S. N. Karpov, R. A. Kotekin, A. B. Pashkovskii, “Heterostructure with additional digital potential barriers for lownoise fieldeffect transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:14 (2024), 48–50   |
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2023 |
| 2. |
A. B. Pashkovskii, S. A. Bogdanov, A. K. Bakarov, K. S. Zhuravlev, V. G. Lapin, V. M. Lukashin, S. N. Karpov, I. A. Rogachev, E. V. Tereshkin, “Electrons drift velocity overshot in heterostructures with double-sided donor-acceptor doping and digital barriers”, Fizika i Tekhnika Poluprovodnikov, 57:1 (2023), 21–28 |
| 3. |
S. A. Bogdanov, S. N. Karpov, A. B. Pashkovskii, “Double-channel heterostructure with additional digital potential barriers for high-power field-effect transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:14 (2023), 28–30 |
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2022 |
| 4. |
A. B. Pashkovskii, S. A. Bogdanov, A. K. Bakarov, K. S. Zhuravlev, V. G. Lapin, V. M. Lukashin, S. N. Karpov, D. Yu. Protasov, I. A. Rogachev, E. V. Tereshkin, “The electrons drift velocity overshot in inverted transistor heterostructures with donor-acceptor doping and additional digital potential barriers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:12 (2022), 11–14 |
| 5. |
S. A. Bogdanov, A. A. Borisov, S. N. Karpov, M. V. Kuliev, A. B. Pashkovskii, E. V. Tereshkin, “Nonlocal electron dynamics in GaN/AlGaN transistor heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:2 (2022), 44–46 |
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2021 |
| 6. |
S. A. Bogdanov, A. K. Bakarov, K. S. Zhuravlev, V. G. Lapin, V. M. Lukashin, A. B. Pashkovskii, I. A. Rogachev, E. V. Tereshkin, S. V. Sherbakov, “A millimeter-wave field-effect transistor based on a pseudomorphic heterostructure with an additional potential barrier”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021), 52–54 ; Tech. Phys. Lett., 47:4 (2021), 329–332 |
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2019 |
| 7. |
A. B. Pashkovskii, S. A. Bogdanov, “Localization of upper-valley electrons in a narrow-bandgap channel: a possible additional mechanism of current increase in DA-DpHEMT”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 11–14 ; Tech. Phys. Lett., 45:10 (2019), 1020–1023 |
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