Kh. F. Zikrillayev, K. S. Ayupov, G. Kh. Mavlonov, A. A. Usmonov, M. M. Shoabduraximova, “Features of the electrophysical parameters of silicon serially doped with impurity atoms of phosphorus and boron”, Fizika i Tekhnika Poluprovodnikov, 56:6 (2022), 528–532
