|
|
|
Publications in Math-Net.Ru |
Citations |
|
2014 |
| 1. |
V. V. Ovcharov, V. I. Rudakov, V. P. Prigara, A. L. Kurenya, “Effect of the doping level on temperature bistability in a silicon wafer”, Zhurnal Tekhnicheskoi Fiziki, 84:8 (2014), 67–76   ; Tech. Phys., 59:8 (2014), 1171–1179 |
2
|
|
2012 |
| 2. |
V. I. Rudakov, E. A. Bogoyavlenskaya, Yu. I. Denisenko, “Annealing effect on the formation of high-$k$ dielectric in the W/ultrathin HfO$_2$/Si-substrate system”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:21 (2012), 48–55 ; Tech. Phys. Lett., 38:11 (2012), 982–984 |
3
|
|
2011 |
| 3. |
V. I. Rudakov, Yu. I. Denisenko, V. V. Naumov, S. G. Simakin, “Features of CoSi$_2$ phase formation by two-stage rapid thermal annealing of Ti/Co/Ti/Si(100) structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:3 (2011), 36–44 ; Tech. Phys. Lett., 37:2 (2011), 112–115 |
|
| Organisations |
|
|
