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Publications in Math-Net.Ru |
Citations |
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2012 |
| 1. |
A. Yu. Fadeev, A. O. Lebedev, Yu. M. Tairov, “Growth of 4H silicon carbide crystals on a $(11\bar22)$ seed”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1368–1373   ; Semiconductors, 46:10 (2012), 1346–1350 |
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2011 |
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D. D. Avrov, A. V. Bulatov, S. I. Dorozhkin, A. O. Lebedev, Yu. M. Tairov, A. Yu. Fadeev, “Mechanisms of defect formation in ingots of 4H silicon carbide polytype”, Fizika i Tekhnika Poluprovodnikov, 45:3 (2011), 289–294 ; Semiconductors, 45:3 (2011), 277–283 |
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2009 |
| 3. |
D. D. Avrov, S. I. Dorozhkin, A. O. Lebedev, Yu. M. Tairov, A. S. Tregubova, A. Yu. Fadeev, “Optimization of structural perfection of 4H-polytype silicon carbide ingots”, Fizika i Tekhnika Poluprovodnikov, 43:9 (2009), 1288–1294 ; Semiconductors, 43:9 (2009), 1248–1254 |
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