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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
Yu. B. Bolkhovityanov, A. K. Gutakovskii, A. S. Deryabin, L. V. Sokolov, “Forming dislocation pairs in the Ge/GeSi/Si(001) heterostructure”, Fizika Tverdogo Tela, 61:2 (2019), 284–287   ; Phys. Solid State, 61:2 (2019), 145–148 |
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2015 |
| 2. |
Yu. B. Bolkhovityanov, A. K. Gutakovskii, A. S. Deryabin, L. V. Sokolov, “Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness”, Fizika Tverdogo Tela, 57:4 (2015), 746–752 ; Phys. Solid State, 57:4 (2015), 765–770 |
3
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2014 |
| 3. |
Yu. B. Bolkhovityanov, A. K. Gutakovskii, A. S. Deryabin, L. V. Sokolov, “Specific features of plastic relaxation of a metastable Ge$_x$Si$_{1-x}$ layer buried between a silicon substrate and a relaxed germanium layer”, Fizika Tverdogo Tela, 56:2 (2014), 247–253 ; Phys. Solid State, 56:2 (2014), 247–253 |
5
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2008 |
| 4. |
Yu. B. Bolkhovityanov, O. P. Pchelyakov, “GaAs epitaxy on Si substrates: modern status of research and engineering”, UFN, 178:5 (2008), 459–480 ; Phys. Usp., 51:5 (2008), 437–456   |
260
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2001 |
| 5. |
Yu. B. Bolkhovityanov, O. P. Pchelyakov, S. I. Chikichev, “Silicon – germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures”, UFN, 171:7 (2001), 689–715 ; Phys. Usp., 44:7 (2001), 655–680 |
66
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1990 |
| 6. |
N. S. Rudaya, Yu. B. Bolkhovityanov, K. S. Zhuravlev, O. A. Shegai, N. A. Yakusheva, “HIGHLY PURE P-GAAS GROWN FROM GAAS SOLUTION TO BI ALLOYED BY YTTERBIUM”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:9 (1990), 37–40 |
| 7. |
Yu. B. Bolkhovityanov, B. V. Morozov, A. G. Paulish, A. S. Suranov, A. S. Terekhov, E. K. Khairi, S. V. Shevelev, “SEMICLEAR ARSENIDE-GALLIUM PHOTOCATHODE ON THE GLASS WITH
PHOTOSENSITIVITY UP TO 1700-MCA/LM”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:7 (1990), 25–29 |
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1989 |
| 8. |
Yu. B. Bolkhovityanov, L. M. Logvinskii, N. S. Rudaya, “CHARACTERISTICS OF THE FORMATION OF A SOLID-PHASE UNDER A CONTACT
CHANGING OF SOLUTIONS - GROWTH OF GAAS ON ALGAAS SURFACE”, Zhurnal Tekhnicheskoi Fiziki, 59:8 (1989), 57–63 |
| 9. |
Yu. B. Bolkhovityanov, L. M. Logvinskii, N. S. Rudaya, “TRANSITION LAYERS IN ALGAAS/GAAS HETEROSTRUCTURES, GROWN BY THE CONTACT
SOLUTION RENEWING - THEORY AND EXPERIMENT”, Zhurnal Tekhnicheskoi Fiziki, 59:3 (1989), 178–185 |
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1986 |
| 10. |
Yu. B. Bolkhovityanov, R. I. Bolhovityanova, Yu. D. Vaulin, B. Z. Olshanetsky, “NATURE OF ALGAAS SEPARATING LAYER ON THE GAAS SURFACE DURING ITS
ISOTHERMAL CONTACTS WITH THE AL-GA-AS LIQUID-PHASE”, Zhurnal Tekhnicheskoi Fiziki, 56:3 (1986), 601–603 |
| 11. |
V. Ya. Prinz, E. Kh. Khairi, V. A. Samoilov, Yu. B. Bolkhovityanov, “Deep Level Induced into GaAs by Doping with Sb Isovalent Impurity”, Fizika i Tekhnika Poluprovodnikov, 20:8 (1986), 1392–1395 |
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