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Zegrya, Georgii Georgievich
Statistics Math-Net.Ru
Total publications: 57
Scientific articles: 54

Number of views:
This page:454
Abstract pages:5741
Full texts:2995
Professor
Doctor of physico-mathematical sciences
E-mail:
Website: https://ioffe.ru/Dep_TM/ru/people/zegrya/;

https://www.mathnet.ru/eng/person56412
List of publications on Google Scholar
https://elibrary.ru/author_items.asp?authorid=23436
https://www.webofscience.com/wos/author/record/C-7339-2014

Publications in Math-Net.Ru Citations
2026
1. M. M. Khalisov, V. A. Penniyaynen, A. V. Berintseva, S. A. Podzorova, G. G. Zegrya, B. V. Krylov, “Increased fibroblast stiffness as a result of pharmacological activation of mechanosensitive Piezo1 ion channels”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:2 (2026),  42–46  mathnet  elib
2025
2. G. G. Zegrya, N. L. Bazhenov, “Auger-recombination mechanisms in semiconductor nanoheterostructures. Part 2. Quantum wires and quantum dots (a review)”, Fizika i Tekhnika Poluprovodnikov, 59:10 (2025),  573–600  mathnet
3. G. G. Zegrya, N. L. Bazhenov, “Auger-recombination mechanisms in semiconductor nanoheterostructures. Part 1. Quantum wells”, Fizika i Tekhnika Poluprovodnikov, 59:9 (2025),  540–561  mathnet
4. G. G. Savenkov, U. M. Poberezhnaya, A. I. Kozachuk, V. M. Freiman, A. G. Zegrya, G. G. Zegrya, “Combustion rate and response time of porous silicon-based ignition compositions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:7 (2025),  43–45  mathnet  elib
2024
5. G. G. Savenkov, V. A. Morozov, M. A. Ilyushin, U. M. Poberezhnaya, V. M. Freiman, A. G. Zegrya, V. A. Bragin, D. V. Fadeev, G. G. Zegrya, “Pecyliarities of initiation by high-current electron beam of energy composites based on porous silicon with niobium boride and graphene additives”, Zhurnal Tekhnicheskoi Fiziki, 94:1 (2024),  119–124  mathnet  elib
6. A. N. Afanasiev, A. A. Greshnov, G. G. Zegrya, “Competition between isotropic and strongly anisotropic terms in the impact ionization rate of narrow- and middle-gap cubic semiconductors”, Fizika i Tekhnika Poluprovodnikov, 58:11 (2024),  620–628  mathnet  elib
2023
7. G. G. Zegrya, V. P. Ulin, A. G. Zegrya, V. M. Freiman, N. V. Ulin, D. V. Fadeev, G. G. Savenkov, “Limiting thickness of pore walls formed in processes of anode etching of heavily doped semiconductors”, Zhurnal Tekhnicheskoi Fiziki, 93:2 (2023),  281–285  mathnet  elib
2022
8. U. M. Poberezhnaya, V. M. Freiman, M. A. Ilyushin, G. G. Zegrya, D. V. Fadeev, I. A. Oskin, V. A. Morozov, A. Yu. Grigor'ev, G. G. Savenkov, “Optical and electron-beam initiation of porous silicon films with different contents of oxidizer and graphene”, Zhurnal Tekhnicheskoi Fiziki, 92:11 (2022),  1699–1704  mathnet  elib
9. N. L. Bazhenov, K. J. Mynbaev, A. A. Semakova, G. G. Zegrya, “Comparative analysis of the efficiency of electroluminescence in type I and II heterostructures based on narrow-gap À$^{\mathrm{III}}$B$^{\mathrm{V}}$ compounds”, Fizika i Tekhnika Poluprovodnikov, 56:5 (2022),  479–485  mathnet  elib
10. G. G. Savenkov, A. I. Kozachuk, U. M. Poberezhnaya, V. M. Freiman, G. G. Zegrya, “Combustion rate of powdered porous silicon with limited space”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  7–10  mathnet  elib
2021
11. V. A. Morozov, A. G. Zegrya, G. G. Zegrya, G. G. Savenkov, “Piezoelectric properties of porous silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:10 (2021),  680–684  mathnet; JETP Letters, 114:10 (2021), 625–629  isi  scopus 1
12. G. G. Zegrya, E. V. Shashkov, A. A. Karpova, N. S. Vorobiev, V. M. Freiman, A. G. Zegrya, Yu. S. Solomonov, “Laser effect in the explosion of porous silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:4 (2021),  263–268  mathnet; JETP Letters, 114:4 (2021), 227–231  isi  scopus 1
13. G. G. Zegrya, V. P. Ulin, A. G. Zegrya, N. V. Ulin, V. M. Fraiman, Yu. M. Mikhailov, “Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions”, Tech. Phys., 66:2 (2021), 367  mathnet  scopus
2020
14. G. G. Zegrya, D. M. Samosvat, A. Ya. Vul', “Energy spectrum of electrons of deep impurity centers in wide-bandgap mesoscopic semiconductors”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:12 (2020),  807–812  mathnet  elib; JETP Letters, 112:12 (2020), 769–773  isi  scopus 2
15. G. G. Zegrya, G. G. Savenkov, A. G. Zegrya, V. A. Bragin, I. A. Oskin, U. M. Poberezhnaya, “Laser initiation of energy-saturated composites based on nanoporous silicon”, Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020),  1708–1714  mathnet  elib; Tech. Phys., 65:10 (2020), 1636–1642 4
16. M. V. Ageev, Yu. N. Vedernikov, G. G. Zegrya, U. M. Poberezhnaya, V. K. Popov, G. G. Savenkov, “Mechanosensitivity of nanoporous silicon-based binary mixtures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  48–51  mathnet  elib; Tech. Phys. Lett., 46:3 (2020), 249–252 2
2019
17. R. V. Levin, B. V. Pushnii, I. V. Fedorov, A. A. Usikova, V. N. Nevedomskiy, N. L. Bazhenov, K. J. Mynbaev, N. V. Pavlov, G. G. Zegrya, “Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1592–1597  mathnet  elib; Tech. Phys., 64:10 (2019), 1509–1514 1
18. G. G. Zegrya, V. P. Ulin, A. G. Zegrya, N. V. Ulin, V. M. Freiman, Yu. M. Mikhailov, “Effect of conductivity type and doping level of silicon crystals on the size of formed pore channels during anodic etching in hydrofluoric acid solutions”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1575–1584  mathnet  elib; Tech. Phys., 64:10 (2019), 1492–1500 6
19. G. G. Savenkov, A. G. Zegrya, G. G. Zegrya, B. V. Rumyantsev, A. B. Sinani, Yu. M. Mikhailov, “The possibilities of energy-saturated nanoporous silicon-based composites (review and new results)”, Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019),  397–403  mathnet  elib; Tech. Phys., 64:3 (2019), 361–367 9
20. D. M. Samosvat, O. P. Chikalova-Luzina, G. G. Zegrya, “The mechanism of singlet oxygen generation on the surface of excited nanoporous silicon”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1485–1496  mathnet  elib; Semiconductors, 53:11 (2019), 1445–1456 2
21. N. L. Bazhenov, K. J. Mynbaev, A. A. Semakova, G. G. Zegrya, “Carrier lifetime in semiconductors with band-gap widths close to the spin-orbit splitting energies”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  450–455  mathnet  elib; Semiconductors, 53:4 (2019), 428–433 2
22. R. V. Levin, V. N. Nevedomskiy, N. L. Bazhenov, G. G. Zegrya, B. V. Pushnii, M. N. Mizerov, “On the possibility of manufacturing strained InAs/GaSb superlattices by the mocvd method”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  273–276  mathnet  elib; Semiconductors, 53:2 (2019), 260–263 1
23. A. G. Zegrya, V. V. Sokolov, G. G. Zegrya, Yu. V. Ganin, Yu. M. Mikhailov, “The effect of the doping level of starting silicon single crystals on structural parameters of porous silicon produced by electrochemical etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  3–6  mathnet  elib; Tech. Phys. Lett., 45:11 (2019), 1067–1070 2
24. G. G. Savenkov, V. A. Morozov, T. V. Ukraintseva, V. M. Kats, G. G. Zegrya, M. A. Ilyushin, “The effect of shungite additives on electric discharge in ammonium perchlorate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  44–46  mathnet  elib; Tech. Phys. Lett., 45:10 (2019), 1001–1003
25. N. V. Pavlov, G. G. Zegrya, “Intraband radiation absorption by free holes in GaAs/InGaAs quantum wells with taking into account non-sphericity of $kP$ hamiltonian”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:10 (2019),  9–12  mathnet  elib; Tech. Phys. Lett., 45:5 (2019), 481–484 1
2018
26. N. V. Pavlov, G. G. Zegrya, A. G. Zegrya, V. E. Bugrov, “Intraband radiation absorption by holes in InAsSb/AlSb and InGaAsP/InP quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  207–220  mathnet  elib; Semiconductors, 52:2 (2018), 195–208 3
27. D. M. Samosvat, O. P. Chikalova-Luzina, V. S. Khromov, A. G. Zegrya, G. G. Zegrya, “The mechanism of generation of singlet oxygen in the presence of excited nanoporous silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:11 (2018),  53–62  mathnet  elib; Tech. Phys. Lett., 44:6 (2018), 479–482 4
2017
28. A. N. Afanasiev, A. A. Greshnov, G. G. Zegrya, “Impact ionization rate in direct gap semiconductors”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:9 (2017),  554–558  mathnet  elib; JETP Letters, 105:9 (2017), 586–590  isi  scopus
29. L. V. Danilov, M. P. Mikhailova, I. A. Andreev, G. G. Zegrya, “Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1196–1201  mathnet  elib; Semiconductors, 51:9 (2017), 1148–1152 3
30. G. G. Zegrya, G. G. Savenkov, V. A. Morozov, A. G. Zegrya, N. V. Ulin, V. P. Ulin, A. A. Lukin, V. A. Bragin, I. A. Oskin, Yu. M. Mikhailov, “Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  501–506  mathnet  elib; Semiconductors, 51:4 (2017), 477–482 6
31. G. G. Savenkov, A. F. Kardo-Sisoev, A. G. Zegrya, I. A. Oskin, V. A. Bragin, G. G. Zegrya, “Initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds with fast semiconductor switches and energy-releasing elements”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  57–63  mathnet  elib; Tech. Phys. Lett., 43:10 (2017), 896–898 4
2016
32. L. V. Danilov, A. A. Petukhov, M. P. Mikhailova, G. G. Zegrya, È. V. Ivanov, Yu. P. Yakovlev, “Features of high-temperature electroluminescence in an LED $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb heterostructure with high potential barriers”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  794–800  mathnet  elib; Semiconductors, 50:6 (2016), 778–784 3
33. R. M. Peleshchak, Ī. Ī. Lazurchak, O. V. Kuzyk, O. O. Dan’kiv, G. G. Zegrya, “Role of acoustoelectric interaction in the formation of nanoscale periodic structures of adsorbed atoms”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  318–323  mathnet  elib; Semiconductors, 50:3 (2016), 314–319 7
2015
34. N. L. Bazhenov, K. J. Mynbaev, G. G. Zegrya, “Temperature dependence of the carrier lifetime in narrow-gap Cd$_x$Hg$_{1-x}$Te solid solutions: Radiative recombination”, Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1206–1211  mathnet  elib; Semiconductors, 49:9 (2015), 1170–1175 8
35. N. V. Pavlov, G. G. Zegrya, “Effect of nonparabolicity of the electron and light-hole energy spectrum on the optical properties of heterostructures with deep AlSb/InAs$_{0.86}$Sb$_{0.14}$/AlSb quantum wells”, Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  617–627  mathnet  elib; Semiconductors, 49:5 (2015), 604–614 3
36. N. L. Bazhenov, K. J. Mynbaev, G. G. Zegrya, “Temperature dependence of the carrier lifetime in Cd$_x$Hg$_{1-x}$Te narrow-gap solid solutions with consideration for Auger processes”, Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  444–448  mathnet  elib; Semiconductors, 49:4 (2015), 432–436 6
2014
37. N. V. Pavlov, G. G. Zegrya, “Optical properties of heterostructures with deep AlSb/InAs$_{0.84}$Sb$_{0.16}$/AlSb quantum wells”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1217–1227  mathnet  elib; Semiconductors, 48:9 (2014), 1185–1195 4
38. N. V. Pavlov, G. G. Zegrya, “The influence of the nonparabolic energy spectrum of charge carriers on the optical characteristics of AlSb/InAs$_{0.84}$Sb$_{0.16}$/AlSb heterostructures with deep quantum wells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:20 (2014),  1–8  mathnet  elib; Tech. Phys. Lett., 40:10 (2014), 883–886
39. O. P. Chikalova-Luzina, D. M. Samosvat, G. G. Zegrya, “The role of exchange interaction in nonradiative energy transfer between semiconductor quantum dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:8 (2014),  64–69  mathnet  elib; Tech. Phys. Lett., 40:4 (2014), 350–352 6
2013
40. L. V. Danilov, G. G. Zegrya, “The role of electron-electron interaction in the process of charge-carrier capture in deep quantum wells”, Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1347–1355  mathnet  elib; Semiconductors, 47:10 (2013), 1336–1345 3
41. D. M. Samosvat, V. P. Evtikhiev, A. S. Shkol'nik, G. G. Zegrya, “On the lifetime of charge carriers in quantum dots at low temperatures”, Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  24–29  mathnet  elib; Semiconductors, 47:1 (2013), 22–27 4
42. N. V. Tkach, I. V. Boiko, J. A. Seti, G. G. Zegrya, “A quantum cascade laser in a transverse magnetic field. A model of the open triple-barrier active region”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:11 (2013),  52–62  mathnet  elib; Tech. Phys. Lett., 39:6 (2013), 520–524
43. L. V. Danilov, G. G. Zegrya, “Resonance coulomb trapping of electrons in a deep quantum well”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:5 (2013),  54–60  mathnet  elib; Tech. Phys. Lett., 39:3 (2013), 255–257 1
44. D. M. Samosvat, O. P. Chikalova-Luzina, A. S. Stepashkina, G. G. Zegrya, “Nonradiative resonance energy transfer between two semiconductor quantum dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:1 (2013),  39–46  mathnet  elib; Tech. Phys. Lett., 39:1 (2013), 74–77 3
2012
45. F. E. Orlenko, G. G. Zegrya, E. V. Orlenko, “Heisenberg–Dirac–van Vleck vector model for a 1D antiferromagnetic chain of localized spins $S$ = 1”, Zhurnal Tekhnicheskoi Fiziki, 82:2 (2012),  10–16  mathnet  elib; Tech. Phys., 57:2 (2012), 167–173 4
46. N. L. Bazhenov, A. V. Shilyaev, K. J. Mynbaev, G. G. Zegrya, “Optical transitions in Cd$_x$Hg$_{1-x}$Te-based quantum wells and their analysis with account for the actual band structure of the material”, Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  792–797  mathnet  elib; Semiconductors, 46:6 (2012), 773–778 4
47. N. V. Pavlov, G. G. Zegrya, “Radiative recombination of hot carriers in narrow-gap semiconductors”, Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  32–37  mathnet  elib; Semiconductors, 46:1 (2012), 29–34 1
2010
48. O. I. Utesov, G. G. Zegrya, A. A. Greshnov, “Pure spin currents generation under quantum wells photoionization”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:1 (2010),  40–42  mathnet; JETP Letters, 92:1 (2010), 33–35  isi  scopus 2
49. R. M. Peleshchak, I. Ya. Bachynsky, G. G. Zegrya, “Calculating potential and electron density for strained semiconductor quantum dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:24 (2010),  1–8  mathnet  elib; Tech. Phys. Lett., 36:12 (2010), 1118–1120
2002
50. A. A. Greshnov, G. G. Zegrya, Yu. B. Vasil'ev, S. D. Suchalkin, B. Ya. Mel'tser, S. V. Ivanov, P. S. Kop'ev, “Cyclotron resonance in the InAs/GaSb heterostructure in an inclined magnetic field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:4 (2002),  258–262  mathnet; JETP Letters, 76:4 (2002), 222–226  scopus 2
2001
51. E. B. Dogonkin, G. G. Zegrya, “New mechanism of current-induced cooling of quantum systems”, Pis'ma v Zh. Èksper. Teoret. Fiz., 74:6 (2001),  346–351  mathnet; JETP Letters, 74:6 (2001), 312–317  scopus
1992
52. G. G. Zegrya, D. A. Parshin, A. R. Shabaev, “Long wavelength shift of the gain edge in semiconductor heterolasers”, Fizika Tverdogo Tela, 34:4 (1992),  1224–1230  mathnet
53. M. Aidaraliev, G. G. Zegrya, N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, “Nature of threshold current-density temperature dependence for long-wavelenght lasers based on InAsSbP/InAs and InAsSbP/InAsSb double heterostructures”, Fizika i Tekhnika Poluprovodnikov, 26:2 (1992),  246–256  mathnet
1984
54. L. É. Gurevich, G. G. Zegrya, “Thermomagnetic generation of alternative current at convective instability with feedback”, Fizika Tverdogo Tela, 26:10 (1984),  2980–2984  mathnet
2018
55. L. V. Danilov, M. P. Mikhailova, R. V. Levin, G. G. Konovalov, E. V. Ivanov, I. A. Andreev, B. V. Pushnyi, G. G. Zegrya, “Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  476  mathnet  elib; Semiconductors, 52:4 (2018), 493–496 1
2013
56. G. G. Zegrya, N. V. Tkach, I. V. Boiko, J. A. Seti, “Quasi-stationary electron states in a multilayered structure in longitudinal electric and transverse magnetic fields”, Fizika Tverdogo Tela, 55:10 (2013),  2067–2073  mathnet  elib; Phys. Solid State, 55:10 (2013), 2182–2189 5
1991
57. Zh. I. Alferov, Yu. N. Efremov, V. E. Golant, V. L. Gurevich, B. P. Zakharchenya, G. G. Zegrya, I. P. Ipatova, V. I. Perel', N. N. Pariiskii, A. D. Chernin, “Lev Emmanuilovich Gurevich (Obituary)”, UFN, 161:6 (1991),  207–209  mathnet; Phys. Usp., 34:6 (1991), 545–546

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