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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
T. V. Perevalov, D. R. Islamov, V. A. Volodin, “Electronic structure and shallow traps nature in silicon-enriched SiO$_x$N$_y$: ab initio simulation”, Fizika Tverdogo Tela, 67:1 (2025), 126–131 |
| 2. |
A. K. Gerasimova, V. A. Voronkovskiy, D. A. Kalmykov, V. Sh. Aliev, V. A. Volodin, M. A. Dem'yanenko, “Optical properties of non-stoichiometric titanium oxides”, Optics and Spectroscopy, 133:1 (2025), 57–64 |
| 3. |
I. D. Yushkov, A. A. Gismatulin, G. N. Kamaev, M. Vergnat, V. A. Volodin, “Mechanism of charge transport
in ITO/[GeO$_x$]$_{(z)}$[SiO$_2$]$_{(1-z)}$ (0.25 $\le z\le1$)/$n^+$-Si MIS structures”, Fizika i Tekhnika Poluprovodnikov, 59:6 (2025), 363–369 |
| 4. |
N. A. Maslova, D. V. Danilov, O. F. Vyvenko, V. A. Skuratov, V. A. Volodin, A. E. Kalyadin, N. A. Sobolev, “Complexes of intrinsic point defects in silicon formed as a result of high-energy xenon ion implantation and post-implantation annealing”, Fizika i Tekhnika Poluprovodnikov, 59:5 (2025), 298–301 |
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2024 |
| 5. |
K. N. Astankova, N. A. Kislukhin, I. A. Azarov, I. P. Prosvirin, V. A. Volodin, “Structure and kinetics of disproportionation of GeO thin films”, Fizika Tverdogo Tela, 66:9 (2024), 1585–1590 |
| 6. |
I. Yu. Prosanov, V. A. Volodin, “Raman scattering behavior of hybrid polymeric complexes of polyvinyl alcohol with CuCl$_2$ and Cu(OH)$_2$/CuO”, Fizika Tverdogo Tela, 66:6 (2024), 1000–1004 |
| 7. |
A. F. Zinovieva, V. A. Zinovyev, A. V. Katsyuba, V. A. Volodin, V. I. Muratov, A. V. Dvurechenskii, “Growth of silicene by molecular beam epitaxy on CaF$_2$/Si(111) substrates modified by electron irradiation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 119:9 (2024), 692–696 ; JETP Letters, 119:9 (2024), 703–707 |
3
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| 8. |
N. A. Nebogatikova, I. V. Antonova, R. A. Soots, K. A. Kokh, E. S. Klimova, V. A. Volodin, “Resistance change of thin films Bi$_2$Se$_3$ and heterostructures Bi$_2$Se$_3$ on graphene under tensile deformation”, Zhurnal Tekhnicheskoi Fiziki, 94:2 (2024), 261–266 |
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2023 |
| 9. |
Fan Zhang, M. Vergnat, V. A. Volodin, “Determination of the activation energy of the disproportionation reaction of amorphous GeO$_x$ film on quartz substrate using Raman spectroscopy”, Zhurnal Tekhnicheskoi Fiziki, 93:8 (2023), 1209–1215 |
| 10. |
V. A. Volodin, G. N. Kamaev, V. A. Gritsenko, S. G. Cherkova, I. P. Prosvirin, “Composition and optical properties of amorphous plasma-chemical silicon oxynitride of variable composition a-SiO$_x$N$_y$:H”, Zhurnal Tekhnicheskoi Fiziki, 93:4 (2023), 575–582 |
| 11. |
I. Yu. Prosanov, A. A. Sidelnikov, V. A. Volodin, “The reason for the revision of conjugated polymers Raman bands attribution”, Optics and Spectroscopy, 131:2 (2023), 260–263 |
1
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| 12. |
E. A. Baranov, V. A. Nepomnyashchikh, V. O. Konstantinov, V. G. Shchukin, I. E. Merkulova, A. O. Zamchiy, N. A. Lunev, V. A. Volodin, A. A. Shapovalova, “Influence of current density on the structure of thin films of amorphous silicon suboxide during electron beam annealing”, Prikl. Mekh. Tekh. Fiz., 64:5 (2023), 52–58 ; J. Appl. Mech. Tech. Phys., 64:5 (2024), 778–783 |
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2022 |
| 13. |
V. A. Zinovyev, A. F. Zinovieva, V. A. Volodin, A. K. Gutakovskii, A. S. Deryabin, A. Yu. Krupin, L. V. Kulik, V. D. Zhivulko, A. V. Mudryi, A. V. Dvurechenskii, “Synthesis of epitaxial structures with two-dimensional si layers embedded in a CaF$_2$ dielectric matrix”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022), 608–613 ; JETP Letters, 116:9 (2022), 628–633 |
4
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| 14. |
V. O. Konstantinov, E. A. Baranov, Zhang Fan, V. G. Shchukin, A. O. Zamchiy, V. A. Volodin, “Formation of germanium nanocrystals and amorphous nanoclusters in GeO[SiO] and GeO[SiO$_2$] films using electron beam annealing”, Zhurnal Tekhnicheskoi Fiziki, 92:9 (2022), 1402–1409 |
| 15. |
V. A. Zinovyev, A. S. Deryabin, A. V. Katsyuba, V. A. Volodin, A. F. Zinov'eva, S. G. Cherkova, Zh. V. Smagina, A. V. Dvurechenskii, A. Yu. Krupin, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi, “Structural and optical properties of two-dimensional Si and Ge layers formed by molecular beam epitaxy on CaF$_2$/Si(111) substrates”, Fizika i Tekhnika Poluprovodnikov, 56:8 (2022), 748–752 |
| 16. |
I. E. Tyschenko, R. A. Khmelnitskii, V. V. Saraikin, V. A. Volodin, V. P. Popov, “Germanium diffusion from buried SiO$_2$ layer and SiGe phase formation”, Fizika i Tekhnika Poluprovodnikov, 56:2 (2022), 192–198 |
| 17. |
E. A. Baranov, A. O. Zamchiy, N. A. Lunev, I. E. Merkulova, V. A. Volodin, M. R. Sharafutdinov, A. A. Shapovalova, “High-temperature annealing of thin silicon suboxide films produced by the method of gas-jet chemical deposition with activation by electron-beam plasma”, Prikl. Mekh. Tekh. Fiz., 63:5 (2022), 33–41 ; J. Appl. Mech. Tech. Phys., 63:5 (2022), 757–764 |
2
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2021 |
| 18. |
V. N. Kruchinin, V. A. Volodin, S. V. Rykhlitskii, V. A. Gritsenko, I. P. Posvirin, Xiaoping Shi, M. R. Baklanov, “Atomic structure and optical properties of plasma enhanced chemical vapor deposited SiCOH Low-k dielectric film”, Optics and Spectroscopy, 129:5 (2021), 618 ; Optics and Spectroscopy, 129:6 (2021), 645–651 |
6
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| 19. |
V. A. Zinov'ev, A. V. Katsyuba, V. A. Volodin, A. F. Zinov'eva, S. G. Cherkova, Zh. V. Smagina, A. V. Dvurechenskii, A. Yu. Krupin, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi, “Atomic structure and optical properties of CaSi$_2$ layers grown on CaF$_2$/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 725–728 ; Semiconductors, 55:10 (2021), 808–811 |
5
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| 20. |
Zhang Fan, S. G. Cherkova, V. A. Volodin, “Formation of germanium nanocrystals in GeO[SiO$_{2}$] and GeO[SiO] films”, Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 507–512 |
| 21. |
N. A. Lunev, A. O. Zamchiy, E. A. Baranov, I. E. Merkulova, V. O. Konstantinov, I. V. Korolkov, E. A. Maximovskiy, V. A. Volodin, “Gold-induced crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 35–38 ; Tech. Phys. Lett., 47:10 (2021), 726–729 |
4
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| 22. |
G. N. Kamaev, V. A. Volodin, G. K. Krivyakin, “Vertical ordering of amorphous Ge nanoclusters in multilayer $a$-Ge/$a$-Si:H heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021), 13–16 ; Tech. Phys. Lett., 47:8 (2021), 609–612 |
| 23. |
E. A. Baranov, V. O. Konstantinov, V. G. Shchukin, A. O. Zamchiy, I. E. Merkulova, N. A. Lunev, V. A. Volodin, “Electron-beam crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 26–28 ; Tech. Phys. Lett., 47:3 (2021), 263–265 |
2
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2020 |
| 24. |
M. P. Gambaryan, G. K. Krivyakin, S. G. Cherkova, M. Stoffel, H. Rinnert, M. Vergnat, V. A. Volodin, “Quantum size effects in germanium nanocrystals and amorphous nanoclusters in GeSi$_x$O$_y$ films”, Fizika Tverdogo Tela, 62:3 (2020), 434–441 ; Phys. Solid State, 62:3 (2020), 492–498 |
17
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| 25. |
K. N. Astankova, V. A. Volodin, I. A. Azarov, “Structure of germanium monoxide thin films”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1296–1301 ; Semiconductors, 54:12 (2020), 1555–1560 |
19
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| 26. |
G. K. Krivyakin, V. A. Volodin, G. N. Kamaev, A. A. Popov, “Effect of interfaces and thickness on the crystallization kinetics of amorphous germanium films”, Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 643–647 ; Semiconductors, 54:7 (2020), 754–758 |
5
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| 27. |
Zhang Fan, S. A. Kochubei, M. Stoffel, H. Rinnert, M. Vergnat, V. A. Volodin, “On the formation of amorphous Ge nanoclusters and Ge nanocrystals in GeSi$_{x}$O$_{y}$ films on quartz substrates by furnace and pulsed laser annealing”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 251–258 ; Semiconductors, 54:3 (2020), 322–329 |
6
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| 28. |
A. O. Zamchiy, E. A. Baranov, I. E. Merkulova, N. A. Lunev, V. A. Volodin, E. A. Maximovskiy, “Indium-induced crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:12 (2020), 14–17 ; Tech. Phys. Lett., 46:6 (2020), 583–586 |
2
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| 29. |
A. V. Kolchin, D. V. Shuleiko, A. V. Pavlikov, S. V. Zabotnov, L. A. Golovan, D. E. Presnov, V. A. Volodin, G. K. Krivyakin, A. A. Popov, P. K. Kashkarov, “Femtosecond laser annealing of multilayer thin-film structures based on amorphous germanium and silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 43–46 ; Tech. Phys. Lett., 46:6 (2020), 560–563 |
8
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2019 |
| 30. |
T. V. Perevalov, V. A. Volodin, Yu. N. Novikov, G. N. Kamaev, V. A. Gritsenko, I. P. Prosvirin, “Nanoscale potential fluctuations in SiO$_{x}$ synthesized by the plasma enhanced chemical vapor deposition”, Fizika Tverdogo Tela, 61:12 (2019), 2528–2535 ; Phys. Solid State, 61:12 (2019), 2560–2568 |
2
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| 31. |
V. A. Volodin, V. A. Timofeev, A. I. Nikiforov, M. Stoffel, H. Rinnert, M. Vergnat, “Vibrational and light-emitting properties of Si/Si$_{1-x}$Sn$_x$ heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:6 (2019), 371–374 ; JETP Letters, 109:6 (2019), 368–371 |
1
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| 32. |
V. N. Kruchinin, M. V. Kruchinina, Ya. I. Prudnikova, E. V. Spesivtsev, S. V. Rykhlitskii, V. A. Volodin, S. V. Shekhovtsov, S. E. Pel'tek, “The use of spectral ellipsometry and Raman spectroscopy in the screening diagnosis of colorectal cancer”, Optics and Spectroscopy, 127:1 (2019), 170–176 ; Optics and Spectroscopy, 127:1 (2019), 170–176 |
4
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| 33. |
S. G. Cherkova, V. A. Skuratov, V. A. Volodin, “Luminescent properties of float zone silicon irradiated with swift heavy ions”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1467–1470 ; Semiconductors, 53:11 (2019), 1427–1430 |
6
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| 34. |
I. E. Tyschenko, V. A. Volodin, V. P. Popov, “Raman scattering in InSb spherical nanocrystals ion-synthesized in silicon-oxide films”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 502–507 ; Semiconductors, 53:4 (2019), 493–498 |
10
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| 35. |
V. A. Volodin, G. K. Krivyakin, G. D. Ivlev, S. L. Prokopyev, S. V. Gusakova, A. A. Popov, “Crystallization of amorphous germanium films and multilayer $a$-Ge/$a$-Si structures upon exposure to nanosecond laser radiation”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 423–429 ; Semiconductors, 53:3 (2019), 400–405 |
26
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2018 |
| 36. |
V. A. Gritsenko, T. V. Perevalov, V. A. Volodin, V. N. Kruchinin, A. K. Gerasimova, I. P. Prosvirin, “Atomic and electronic structures of metal-rich noncentrosymmetric ZrO$_x$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 108:4 (2018), 230–235 ; JETP Letters, 108:4 (2018), 226–230 |
2
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| 37. |
V. N. Kruchinin, V. A. Volodin, T. V. Perevalov, A. K. Gerasimova, V. Sh. Aliev, V. A. Gritsenko, “Optical properties of nonstoichiometric tantalum oxide TaO$_{x}$ ($x<$ 5/2) according to spectral-ellipsometry and Raman-scattering data”, Optics and Spectroscopy, 124:6 (2018), 777–782 ; Optics and Spectroscopy, 124:6 (2018), 808–813 |
18
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| 38. |
V. A. Volodin, Zhang Rui, G. K. Krivyakin, A. Kh. Antonenko, M. Stoffel, H. Rinnert, M. Vergnat, “On the formation of IR-light-emitting Ge nanocrystals in Ge:SiO$_{2}$ films”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1056–1065 ; Semiconductors, 52:9 (2018), 1178–1187 |
4
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| 39. |
V. A. Volodin, V. A. Sachkov, M. P. Sinyukov, “Forbidden resonant Raman scattering in GaAs/AlAs superlattices: experiment and calculations”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 569–574 ; Semiconductors, 52:6 (2018), 717–722 |
1
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| 40. |
E. B. Gorokhov, K. N. Astankova, I. A. Azarov, V. A. Volodin, A. V. Latyshev, “New method of porous Ge layer fabrication: structure and optical properties”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 517 ; Semiconductors, 52:5 (2018), 628–631 |
2
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| 41. |
I. E. Tyschenko, G. K. Krivyakin, V. A. Volodin, “Ion-beam synthesis of the crystalline Ge phase in SiO$_{x}$N$_{y}$ films upon annealing under high pressure”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 280–284 ; Semiconductors, 52:2 (2018), 268–272 |
| 42. |
V. A. Volodin, V. A. Gritsenko, A. Chin, “Local oscillations of silicon–silicon bonds in silicon nitride”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018), 37–45 ; Tech. Phys. Lett., 44:5 (2018), 424–427 |
8
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2017 |
| 43. |
V. A. Volodin, V. A. Timofeev, A. R. Tuktamyshev, A. I. Nikiforov, “Splitting of frequencies of optical phonons in tensile-strained germanium layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:5 (2017), 305–310 ; JETP Letters, 105:5 (2017), 327–331 |
16
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| 44. |
G. K. Krivyakin, V. A. Volodin, A. A. Shklyaev, V. Mortet, J. More-Chevalier, P. Ashcheulov, Z. Remes, T. H. Stuchliková, J. Stuchlik, “Formation and study of $p$–$i$–$n$ structures based on two-phase hydrogenated silicon with a germanium layer in the $i$-type region”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1420–1425 ; Semiconductors, 51:10 (2017), 1370–1376 |
6
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| 45. |
I. E. Tyschenko, A. G. Cherkov, V. A. Volodin, M. Voelskow, “Specific features of the ion-beam synthesis of Ge nanocrystals in SiO$_{2}$ thin films”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1289–1294 ; Semiconductors, 51:9 (2017), 1240–1246 |
1
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2016 |
| 46. |
G. K. Krivyakin, V. A. Volodin, S. A. Kochubei, G. N. Kamaev, A. Purkrt, Z. Remes, R. Fajgar, T. H. Stuchliková, J. Stuchlik, “Optical properties of $p$–$i$–$n$ structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 952–957 ; Semiconductors, 50:7 (2016), 935–940 |
11
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2015 |
| 47. |
V. A. Volodin, L. V. Sokolov, “Redshift of the absorption edge in tensile-strained germanium layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:6 (2015), 455–458 ; JETP Letters, 101:6 (2015), 419–421 |
6
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2014 |
| 48. |
V. A. Volodin, M. P. Sinyukov, “Anisotropy of long-wavelength optical phonons in GaAs/AlAs superlattice”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:7 (2014), 463–466 ; JETP Letters, 99:7 (2014), 396–399 |
10
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| 49. |
I. E. Tyschenko, V. A. Volodin, V. V. Kozlovsky, V. P. Popov, “Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose”, Fizika i Tekhnika Poluprovodnikov, 48:10 (2014), 1339–1343 ; Semiconductors, 48:10 (2014), 1303–1307 |
1
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| 50. |
I. V. Antonova, S. V. Golod, R. A. Soots, A. I. Komonov, V. A. Seleznev, M. A. Sergeev, V. A. Volodin, V. Ya. Prinz, “Comparison of various methods for transferring graphene and few layer graphene grown by chemical vapor deposition to an insulating SiO$_2$/Si substrate”, Fizika i Tekhnika Poluprovodnikov, 48:6 (2014), 827–823 ; Semiconductors, 48:6 (2014), 804–808 |
15
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| 51. |
V. A. Volodin, M. P. Sinyukov, D. V. Shcheglov, A. V. Latyshev, E. V. Fedosenko, “Raman scattering in PbTe and PbSnTe films: In situ phase transformations”, Fizika i Tekhnika Poluprovodnikov, 48:2 (2014), 185–189 ; Semiconductors, 48:2 (2014), 173–177 |
7
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2013 |
| 52. |
I. E. Tyschenko, V. A. Volodin, M. Voelskow, A. G. Cherkov, V. P. Popov, “Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 591–597 ; Semiconductors, 47:5 (2013), 606–611 |
1
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| 53. |
G. A. Kachurin, S. G. Cherkova, D. V. Marin, V. A. Volodin, A. G. Cherkov, A. Kh. Antonenko, G. N. Kamaev, V. A. Skuratov, “Influence of irradiation with swift heavy ions on multilayer Si/SiO$_2$ heterostructures”, Fizika i Tekhnika Poluprovodnikov, 47:3 (2013), 334–339 ; Semiconductors, 47:3 (2013), 358–364 |
3
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2012 |
| 54. |
D. V. Marin, V. A. Volodin, H. Rinnert, M. Vergnat, “Anomalous temperature dependence of photoluminescence in
GeO$_{x}$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:8 (2012), 472–476 ; JETP Letters, 95:8 (2012), 424–428 |
9
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| 55. |
V. A. Volodin, A. S. Kozhukhov, A. V. Latyshev, D. V. Shcheglov, “Folding of acoustic-phonon modes in GaAs/AlAs (311)A superlattices in the direction perpendicular to nanofacets”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:2 (2012), 76–79 ; JETP Letters, 95:2 (2012), 70–73 |
4
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| 56. |
I. E. Tyschenko, V. A. Volodin, “Quantum-confinement effect in silicon-on-insulator films implanted with high doses of hydrogen ions”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1309–1313 ; Semiconductors, 46:10 (2012), 1286–1290 |
1
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2011 |
| 57. |
V. A. Volodin, “Anisotropy of phonon-plasmon modes in GaAs/AlAs(311) superlattices”, Fizika Tverdogo Tela, 53:2 (2011), 377–379 ; Phys. Solid State, 53:2 (2011), 404–406 |
7
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| 58. |
V. A. Volodin, A. S. Kacko, A. G. Cherkov, A. V. Latyshev, J. Koch, B. N. Chichkov, “Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:10 (2011), 665–668 ; JETP Letters, 93:10 (2011), 603–606 |
12
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| 59. |
G. A. Kachurin, S. G. Cherkova, V. A. Skuratov, D. V. Marin, V. G. Kesler, V. A. Volodin, “Formation of light-emitting nanostructures in layers of stoichiometric SiO$_2$ irradiated with swift heavy ions”, Fizika i Tekhnika Poluprovodnikov, 45:10 (2011), 1363–1368 ; Semiconductors, 45:10 (2011), 13111–1316 |
3
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| 60. |
V. A. Volodin, A. S. Kacko, “Crystallization of hydrogenated amorphous silicon films by exposure to femtosecond pulsed laser radiation”, Fizika i Tekhnika Poluprovodnikov, 45:2 (2011), 268–273 ; Semiconductors, 45:2 (2011), 265–270 |
16
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| 61. |
T. T. Korchagina, V. A. Volodin, A. A. Popov, K. S. Khor'kov, M. N. Gerke, “Formation of silicon nanocrystals in SiN$_x$ film on PET substrates using femtosecond laser pulses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:13 (2011), 62–69 ; Tech. Phys. Lett., 37:7 (2011), 622–625 |
5
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2010 |
| 62. |
T. T. Korchagina, V. A. Volodin, B. N. Chichkov, “Formation and crystallization of silicon nanoclusters in SiN$_x$ :H films using femtosecond pulsed laser annealings”, Fizika i Tekhnika Poluprovodnikov, 44:12 (2010), 1660–1665 ; Semiconductors, 44:12 (2010), 1611–1616 |
6
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| 63. |
S. N. Shamin, V. R. Galakhov, V. I. Aksenova, A. N. Karpov, N. L. Shwartz, Z. Sh. Yanovitskaya, V. A. Volodin, I. V. Antonova, T. B. Ezhevskaya, J. Jedrzejewski, E. Savir, I. Balberg, “X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO$_2$ and Si sources”, Fizika i Tekhnika Poluprovodnikov, 44:4 (2010), 550–555 ; Semiconductors, 44:4 (2010), 531–536 |
8
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| 64. |
D. V. Marin, V. A. Volodin, E. B. Gorokhov, D. V. Shcheglov, A. V. Latyshev, M. Vergnat, J. Koch, B. N. Chichkov, “Modification of germanium nanoclusters in GeO$_x$ films during isochronous furnace and pulse laser annealing”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010), 102–110 ; Tech. Phys. Lett., 36:5 (2010), 439–442 |
6
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2009 |
| 65. |
V. A. Volodin, “Experimental discovery of the anisotropy of phonon-plasmon modes in GaAs/AlAs(100) superlattices”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:8 (2009), 483–485 ; JETP Letters, 89:8 (2009), 419–421 |
8
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| 66. |
V. A. Volodin, E. V. Gorokhov, D. V. Marin, H. Rinnert, P. Miska, M. Vergnat, “Quasi-direct optical transitions in Ge nanocrystals embedded in GeO$_2$ matrix”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009), 84–88 ; JETP Letters, 89:2 (2009), 76–79 |
7
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2007 |
| 67. |
V. A. Volodin, M. D. Efremov, G. A. Kachurin, A. G. Cherkov, M. Deutschmann, N. Baersch, “Phase transitions in $a$-Si:H films on a glass irradiated by high-power femtosecond pulses: Manifestation of nonlinear and nonthermal effects”, Pis'ma v Zh. Èksper. Teoret. Fiz., 86:2 (2007), 128–131 ; JETP Letters, 86:2 (2007), 119–122 |
19
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2005 |
| 68. |
V. A. Volodin, M. D. Efremov, “Electron-phonon interaction in boron-doped silicon nanocrystals: Effect of Fano interference on the Raman spectrum”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:2 (2005), 91–94 ; JETP Letters, 82:2 (2005), 86–88 |
12
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| 69. |
D. A. Orekhov, V. A. Volodin, M. D. Efremov, A. I. Nikiforov, V. V. Ul'yanov, O. P. Pchelyakov, “Phonon localization in Ge nanoislands and its manifestation in Raman spectra”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:7 (2005), 415–418 ; JETP Letters, 81:7 (2005), 331–334 |
8
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2004 |
| 70. |
M. D. Efremov, V. A. Volodin, D. V. Marin, S. A. Arzhannikova, S. V. Goryainov, A. I. Korchagin, V. V. Cherepkov, A. V. Lavrukhin, S. N. Fadeev, R. A. Salimov, S. P. Bardakhanov, “Visible photoluminescence from silicon nanopowders produced by silicon evaporation in a high-power electron beam”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:8 (2004), 619–622 ; JETP Letters, 80:8 (2004), 544–547 |
23
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A. V. Dvurechenskii, Zh. V. Smagina, V. A. Zinov'ev, V. A. Armbrister, V. A. Volodin, M. D. Efremov, “Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:7 (2004), 411–415 ; JETP Letters, 79:7 (2004), 333–336 |
5
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2003 |
| 72. |
V. A. Volodin, Y. B. Gorokhov, M. D. Efremov, D. V. Marin, D. A. Orekhov, “Photoluminescence of GeO$_2$ films containing germanium nanocrystals”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:8 (2003), 485–488 ; JETP Letters, 77:8 (2003), 411–414 |
18
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1991 |
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V. A. Volodin, A. M. Khapaev, “An exact solution of the relativistic Klein–Gordon wave equation”, Zh. Vychisl. Mat. Mat. Fiz., 31:6 (1991), 877–886 ; U.S.S.R. Comput. Math. Math. Phys., 31:6 (1991), 69–76 |
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