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Volodin, Vladimir Alekseevich

Statistics Math-Net.Ru
Total publications: 73
Scientific articles: 73

Number of views:
This page:544
Abstract pages:11226
Full texts:4582
Doctor of physico-mathematical sciences
E-mail: ,

https://www.mathnet.ru/eng/person56554
List of publications on Google Scholar

Publications in Math-Net.Ru Citations
2025
1. T. V. Perevalov, D. R. Islamov, V. A. Volodin, “Electronic structure and shallow traps nature in silicon-enriched SiO$_x$N$_y$: ab initio simulation”, Fizika Tverdogo Tela, 67:1 (2025),  126–131  mathnet  elib
2. A. K. Gerasimova, V. A. Voronkovskiy, D. A. Kalmykov, V. Sh. Aliev, V. A. Volodin, M. A. Dem'yanenko, “Optical properties of non-stoichiometric titanium oxides”, Optics and Spectroscopy, 133:1 (2025),  57–64  mathnet  elib
3. I. D. Yushkov, A. A. Gismatulin, G. N. Kamaev, M. Vergnat, V. A. Volodin, “Mechanism of charge transport in ITO/[GeO$_x$]$_{(z)}$[SiO$_2$]$_{(1-z)}$ (0.25 $\le z\le1$)/$n^+$-Si MIS structures”, Fizika i Tekhnika Poluprovodnikov, 59:6 (2025),  363–369  mathnet
4. N. A. Maslova, D. V. Danilov, O. F. Vyvenko, V. A. Skuratov, V. A. Volodin, A. E. Kalyadin, N. A. Sobolev, “Complexes of intrinsic point defects in silicon formed as a result of high-energy xenon ion implantation and post-implantation annealing”, Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  298–301  mathnet
2024
5. K. N. Astankova, N. A. Kislukhin, I. A. Azarov, I. P. Prosvirin, V. A. Volodin, “Structure and kinetics of disproportionation of GeO thin films”, Fizika Tverdogo Tela, 66:9 (2024),  1585–1590  mathnet
6. I. Yu. Prosanov, V. A. Volodin, “Raman scattering behavior of hybrid polymeric complexes of polyvinyl alcohol with CuCl$_2$ and Cu(OH)$_2$/CuO”, Fizika Tverdogo Tela, 66:6 (2024),  1000–1004  mathnet  elib
7. A. F. Zinovieva, V. A. Zinovyev, A. V. Katsyuba, V. A. Volodin, V. I. Muratov, A. V. Dvurechenskii, “Growth of silicene by molecular beam epitaxy on CaF$_2$/Si(111) substrates modified by electron irradiation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 119:9 (2024),  692–696  mathnet; JETP Letters, 119:9 (2024), 703–707 3
8. N. A. Nebogatikova, I. V. Antonova, R. A. Soots, K. A. Kokh, E. S. Klimova, V. A. Volodin, “Resistance change of thin films Bi$_2$Se$_3$ and heterostructures Bi$_2$Se$_3$ on graphene under tensile deformation”, Zhurnal Tekhnicheskoi Fiziki, 94:2 (2024),  261–266  mathnet  elib
2023
9. Fan Zhang, M. Vergnat, V. A. Volodin, “Determination of the activation energy of the disproportionation reaction of amorphous GeO$_x$ film on quartz substrate using Raman spectroscopy”, Zhurnal Tekhnicheskoi Fiziki, 93:8 (2023),  1209–1215  mathnet  elib
10. V. A. Volodin, G. N. Kamaev, V. A. Gritsenko, S. G. Cherkova, I. P. Prosvirin, “Composition and optical properties of amorphous plasma-chemical silicon oxynitride of variable composition a-SiO$_x$N$_y$:H”, Zhurnal Tekhnicheskoi Fiziki, 93:4 (2023),  575–582  mathnet  elib
11. I. Yu. Prosanov, A. A. Sidelnikov, V. A. Volodin, “The reason for the revision of conjugated polymers Raman bands attribution”, Optics and Spectroscopy, 131:2 (2023),  260–263  mathnet  elib 1
12. E. A. Baranov, V. A. Nepomnyashchikh, V. O. Konstantinov, V. G. Shchukin, I. E. Merkulova, A. O. Zamchiy, N. A. Lunev, V. A. Volodin, A. A. Shapovalova, “Influence of current density on the structure of thin films of amorphous silicon suboxide during electron beam annealing”, Prikl. Mekh. Tekh. Fiz., 64:5 (2023),  52–58  mathnet  elib; J. Appl. Mech. Tech. Phys., 64:5 (2024), 778–783
2022
13. V. A. Zinovyev, A. F. Zinovieva, V. A. Volodin, A. K. Gutakovskii, A. S. Deryabin, A. Yu. Krupin, L. V. Kulik, V. D. Zhivulko, A. V. Mudryi, A. V. Dvurechenskii, “Synthesis of epitaxial structures with two-dimensional si layers embedded in a CaF$_2$ dielectric matrix”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022),  608–613  mathnet; JETP Letters, 116:9 (2022), 628–633 4
14. V. O. Konstantinov, E. A. Baranov, Zhang Fan, V. G. Shchukin, A. O. Zamchiy, V. A. Volodin, “Formation of germanium nanocrystals and amorphous nanoclusters in GeO[SiO] and GeO[SiO$_2$] films using electron beam annealing”, Zhurnal Tekhnicheskoi Fiziki, 92:9 (2022),  1402–1409  mathnet  elib
15. V. A. Zinovyev, A. S. Deryabin, A. V. Katsyuba, V. A. Volodin, A. F. Zinov'eva, S. G. Cherkova, Zh. V. Smagina, A. V. Dvurechenskii, A. Yu. Krupin, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi, “Structural and optical properties of two-dimensional Si and Ge layers formed by molecular beam epitaxy on CaF$_2$/Si(111) substrates”, Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  748–752  mathnet  elib
16. I. E. Tyschenko, R. A. Khmelnitskii, V. V. Saraikin, V. A. Volodin, V. P. Popov, “Germanium diffusion from buried SiO$_2$ layer and SiGe phase formation”, Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  192–198  mathnet  elib
17. E. A. Baranov, A. O. Zamchiy, N. A. Lunev, I. E. Merkulova, V. A. Volodin, M. R. Sharafutdinov, A. A. Shapovalova, “High-temperature annealing of thin silicon suboxide films produced by the method of gas-jet chemical deposition with activation by electron-beam plasma”, Prikl. Mekh. Tekh. Fiz., 63:5 (2022),  33–41  mathnet  elib; J. Appl. Mech. Tech. Phys., 63:5 (2022), 757–764 2
2021
18. V. N. Kruchinin, V. A. Volodin, S. V. Rykhlitskii, V. A. Gritsenko, I. P. Posvirin, Xiaoping Shi, M. R. Baklanov, “Atomic structure and optical properties of plasma enhanced chemical vapor deposited SiCOH Low-k dielectric film”, Optics and Spectroscopy, 129:5 (2021),  618  mathnet; Optics and Spectroscopy, 129:6 (2021), 645–651 6
19. V. A. Zinov'ev, A. V. Katsyuba, V. A. Volodin, A. F. Zinov'eva, S. G. Cherkova, Zh. V. Smagina, A. V. Dvurechenskii, A. Yu. Krupin, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi, “Atomic structure and optical properties of CaSi$_2$ layers grown on CaF$_2$/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  725–728  mathnet  elib; Semiconductors, 55:10 (2021), 808–811 5
20. Zhang Fan, S. G. Cherkova, V. A. Volodin, “Formation of germanium nanocrystals in GeO[SiO$_{2}$] and GeO[SiO] films”, Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  507–512  mathnet  elib
21. N. A. Lunev, A. O. Zamchiy, E. A. Baranov, I. E. Merkulova, V. O. Konstantinov, I. V. Korolkov, E. A. Maximovskiy, V. A. Volodin, “Gold-induced crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  35–38  mathnet  elib; Tech. Phys. Lett., 47:10 (2021), 726–729 4
22. G. N. Kamaev, V. A. Volodin, G. K. Krivyakin, “Vertical ordering of amorphous Ge nanoclusters in multilayer $a$-Ge/$a$-Si:H heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021),  13–16  mathnet  elib; Tech. Phys. Lett., 47:8 (2021), 609–612
23. E. A. Baranov, V. O. Konstantinov, V. G. Shchukin, A. O. Zamchiy, I. E. Merkulova, N. A. Lunev, V. A. Volodin, “Electron-beam crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  26–28  mathnet  elib; Tech. Phys. Lett., 47:3 (2021), 263–265 2
2020
24. M. P. Gambaryan, G. K. Krivyakin, S. G. Cherkova, M. Stoffel, H. Rinnert, M. Vergnat, V. A. Volodin, “Quantum size effects in germanium nanocrystals and amorphous nanoclusters in GeSi$_x$O$_y$ films”, Fizika Tverdogo Tela, 62:3 (2020),  434–441  mathnet  elib; Phys. Solid State, 62:3 (2020), 492–498 17
25. K. N. Astankova, V. A. Volodin, I. A. Azarov, “Structure of germanium monoxide thin films”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1296–1301  mathnet  elib; Semiconductors, 54:12 (2020), 1555–1560 19
26. G. K. Krivyakin, V. A. Volodin, G. N. Kamaev, A. A. Popov, “Effect of interfaces and thickness on the crystallization kinetics of amorphous germanium films”, Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  643–647  mathnet  elib; Semiconductors, 54:7 (2020), 754–758 5
27. Zhang Fan, S. A. Kochubei, M. Stoffel, H. Rinnert, M. Vergnat, V. A. Volodin, “On the formation of amorphous Ge nanoclusters and Ge nanocrystals in GeSi$_{x}$O$_{y}$ films on quartz substrates by furnace and pulsed laser annealing”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  251–258  mathnet  elib; Semiconductors, 54:3 (2020), 322–329 6
28. A. O. Zamchiy, E. A. Baranov, I. E. Merkulova, N. A. Lunev, V. A. Volodin, E. A. Maximovskiy, “Indium-induced crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:12 (2020),  14–17  mathnet  elib; Tech. Phys. Lett., 46:6 (2020), 583–586 2
29. A. V. Kolchin, D. V. Shuleiko, A. V. Pavlikov, S. V. Zabotnov, L. A. Golovan, D. E. Presnov, V. A. Volodin, G. K. Krivyakin, A. A. Popov, P. K. Kashkarov, “Femtosecond laser annealing of multilayer thin-film structures based on amorphous germanium and silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  43–46  mathnet  elib; Tech. Phys. Lett., 46:6 (2020), 560–563 8
2019
30. T. V. Perevalov, V. A. Volodin, Yu. N. Novikov, G. N. Kamaev, V. A. Gritsenko, I. P. Prosvirin, “Nanoscale potential fluctuations in SiO$_{x}$ synthesized by the plasma enhanced chemical vapor deposition”, Fizika Tverdogo Tela, 61:12 (2019),  2528–2535  mathnet  elib; Phys. Solid State, 61:12 (2019), 2560–2568 2
31. V. A. Volodin, V. A. Timofeev, A. I. Nikiforov, M. Stoffel, H. Rinnert, M. Vergnat, “Vibrational and light-emitting properties of Si/Si$_{1-x}$Sn$_x$ heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:6 (2019),  371–374  mathnet  elib; JETP Letters, 109:6 (2019), 368–371  isi  scopus 1
32. V. N. Kruchinin, M. V. Kruchinina, Ya. I. Prudnikova, E. V. Spesivtsev, S. V. Rykhlitskii, V. A. Volodin, S. V. Shekhovtsov, S. E. Pel'tek, “The use of spectral ellipsometry and Raman spectroscopy in the screening diagnosis of colorectal cancer”, Optics and Spectroscopy, 127:1 (2019),  170–176  mathnet  elib; Optics and Spectroscopy, 127:1 (2019), 170–176 4
33. S. G. Cherkova, V. A. Skuratov, V. A. Volodin, “Luminescent properties of float zone silicon irradiated with swift heavy ions”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1467–1470  mathnet  elib; Semiconductors, 53:11 (2019), 1427–1430 6
34. I. E. Tyschenko, V. A. Volodin, V. P. Popov, “Raman scattering in InSb spherical nanocrystals ion-synthesized in silicon-oxide films”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  502–507  mathnet  elib; Semiconductors, 53:4 (2019), 493–498 10
35. V. A. Volodin, G. K. Krivyakin, G. D. Ivlev, S. L. Prokopyev, S. V. Gusakova, A. A. Popov, “Crystallization of amorphous germanium films and multilayer $a$-Ge/$a$-Si structures upon exposure to nanosecond laser radiation”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  423–429  mathnet  elib; Semiconductors, 53:3 (2019), 400–405 26
2018
36. V. A. Gritsenko, T. V. Perevalov, V. A. Volodin, V. N. Kruchinin, A. K. Gerasimova, I. P. Prosvirin, “Atomic and electronic structures of metal-rich noncentrosymmetric ZrO$_x$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 108:4 (2018),  230–235  mathnet  elib; JETP Letters, 108:4 (2018), 226–230  isi  scopus 2
37. V. N. Kruchinin, V. A. Volodin, T. V. Perevalov, A. K. Gerasimova, V. Sh. Aliev, V. A. Gritsenko, “Optical properties of nonstoichiometric tantalum oxide TaO$_{x}$ ($x<$ 5/2) according to spectral-ellipsometry and Raman-scattering data”, Optics and Spectroscopy, 124:6 (2018),  777–782  mathnet  elib; Optics and Spectroscopy, 124:6 (2018), 808–813 18
38. V. A. Volodin, Zhang Rui, G. K. Krivyakin, A. Kh. Antonenko, M. Stoffel, H. Rinnert, M. Vergnat, “On the formation of IR-light-emitting Ge nanocrystals in Ge:SiO$_{2}$ films”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1056–1065  mathnet  elib; Semiconductors, 52:9 (2018), 1178–1187 4
39. V. A. Volodin, V. A. Sachkov, M. P. Sinyukov, “Forbidden resonant Raman scattering in GaAs/AlAs superlattices: experiment and calculations”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  569–574  mathnet  elib; Semiconductors, 52:6 (2018), 717–722 1
40. E. B. Gorokhov, K. N. Astankova, I. A. Azarov, V. A. Volodin, A. V. Latyshev, “New method of porous Ge layer fabrication: structure and optical properties”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  517  mathnet  elib; Semiconductors, 52:5 (2018), 628–631 2
41. I. E. Tyschenko, G. K. Krivyakin, V. A. Volodin, “Ion-beam synthesis of the crystalline Ge phase in SiO$_{x}$N$_{y}$ films upon annealing under high pressure”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  280–284  mathnet  elib; Semiconductors, 52:2 (2018), 268–272
42. V. A. Volodin, V. A. Gritsenko, A. Chin, “Local oscillations of silicon–silicon bonds in silicon nitride”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018),  37–45  mathnet  elib; Tech. Phys. Lett., 44:5 (2018), 424–427 8
2017
43. V. A. Volodin, V. A. Timofeev, A. R. Tuktamyshev, A. I. Nikiforov, “Splitting of frequencies of optical phonons in tensile-strained germanium layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:5 (2017),  305–310  mathnet  elib; JETP Letters, 105:5 (2017), 327–331  isi  scopus 16
44. G. K. Krivyakin, V. A. Volodin, A. A. Shklyaev, V. Mortet, J. More-Chevalier, P. Ashcheulov, Z. Remes, T. H. Stuchliková, J. Stuchlik, “Formation and study of $p$$i$$n$ structures based on two-phase hydrogenated silicon with a germanium layer in the $i$-type region”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1420–1425  mathnet  elib; Semiconductors, 51:10 (2017), 1370–1376 6
45. I. E. Tyschenko, A. G. Cherkov, V. A. Volodin, M. Voelskow, “Specific features of the ion-beam synthesis of Ge nanocrystals in SiO$_{2}$ thin films”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1289–1294  mathnet  elib; Semiconductors, 51:9 (2017), 1240–1246 1
2016
46. G. K. Krivyakin, V. A. Volodin, S. A. Kochubei, G. N. Kamaev, A. Purkrt, Z. Remes, R. Fajgar, T. H. Stuchliková, J. Stuchlik, “Optical properties of $p$$i$$n$ structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  952–957  mathnet  elib; Semiconductors, 50:7 (2016), 935–940 11
2015
47. V. A. Volodin, L. V. Sokolov, “Redshift of the absorption edge in tensile-strained germanium layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:6 (2015),  455–458  mathnet  elib; JETP Letters, 101:6 (2015), 419–421  isi  elib  scopus 6
2014
48. V. A. Volodin, M. P. Sinyukov, “Anisotropy of long-wavelength optical phonons in GaAs/AlAs superlattice”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:7 (2014),  463–466  mathnet  elib; JETP Letters, 99:7 (2014), 396–399  isi  elib  scopus 10
49. I. E. Tyschenko, V. A. Volodin, V. V. Kozlovsky, V. P. Popov, “Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose”, Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1339–1343  mathnet  elib; Semiconductors, 48:10 (2014), 1303–1307 1
50. I. V. Antonova, S. V. Golod, R. A. Soots, A. I. Komonov, V. A. Seleznev, M. A. Sergeev, V. A. Volodin, V. Ya. Prinz, “Comparison of various methods for transferring graphene and few layer graphene grown by chemical vapor deposition to an insulating SiO$_2$/Si substrate”, Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  827–823  mathnet  elib; Semiconductors, 48:6 (2014), 804–808 15
51. V. A. Volodin, M. P. Sinyukov, D. V. Shcheglov, A. V. Latyshev, E. V. Fedosenko, “Raman scattering in PbTe and PbSnTe films: In situ phase transformations”, Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  185–189  mathnet  elib; Semiconductors, 48:2 (2014), 173–177 7
2013
52. I. E. Tyschenko, V. A. Volodin, M. Voelskow, A. G. Cherkov, V. P. Popov, “Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  591–597  mathnet  elib; Semiconductors, 47:5 (2013), 606–611 1
53. G. A. Kachurin, S. G. Cherkova, D. V. Marin, V. A. Volodin, A. G. Cherkov, A. Kh. Antonenko, G. N. Kamaev, V. A. Skuratov, “Influence of irradiation with swift heavy ions on multilayer Si/SiO$_2$ heterostructures”, Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  334–339  mathnet  elib; Semiconductors, 47:3 (2013), 358–364 3
2012
54. D. V. Marin, V. A. Volodin, H. Rinnert, M. Vergnat, “Anomalous temperature dependence of photoluminescence in GeO$_{x}$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:8 (2012),  472–476  mathnet  elib; JETP Letters, 95:8 (2012), 424–428  isi  elib  scopus 9
55. V. A. Volodin, A. S. Kozhukhov, A. V. Latyshev, D. V. Shcheglov, “Folding of acoustic-phonon modes in GaAs/AlAs (311)A superlattices in the direction perpendicular to nanofacets”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:2 (2012),  76–79  mathnet  elib; JETP Letters, 95:2 (2012), 70–73  isi  elib  scopus 4
56. I. E. Tyschenko, V. A. Volodin, “Quantum-confinement effect in silicon-on-insulator films implanted with high doses of hydrogen ions”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1309–1313  mathnet  elib; Semiconductors, 46:10 (2012), 1286–1290 1
2011
57. V. A. Volodin, “Anisotropy of phonon-plasmon modes in GaAs/AlAs(311) superlattices”, Fizika Tverdogo Tela, 53:2 (2011),  377–379  mathnet  elib; Phys. Solid State, 53:2 (2011), 404–406 7
58. V. A. Volodin, A. S. Kacko, A. G. Cherkov, A. V. Latyshev, J. Koch, B. N. Chichkov, “Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:10 (2011),  665–668  mathnet; JETP Letters, 93:10 (2011), 603–606  isi  scopus 12
59. G. A. Kachurin, S. G. Cherkova, V. A. Skuratov, D. V. Marin, V. G. Kesler, V. A. Volodin, “Formation of light-emitting nanostructures in layers of stoichiometric SiO$_2$ irradiated with swift heavy ions”, Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1363–1368  mathnet  elib; Semiconductors, 45:10 (2011), 13111–1316 3
60. V. A. Volodin, A. S. Kacko, “Crystallization of hydrogenated amorphous silicon films by exposure to femtosecond pulsed laser radiation”, Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  268–273  mathnet  elib; Semiconductors, 45:2 (2011), 265–270 16
61. T. T. Korchagina, V. A. Volodin, A. A. Popov, K. S. Khor'kov, M. N. Gerke, “Formation of silicon nanocrystals in SiN$_x$ film on PET substrates using femtosecond laser pulses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:13 (2011),  62–69  mathnet  elib; Tech. Phys. Lett., 37:7 (2011), 622–625 5
2010
62. T. T. Korchagina, V. A. Volodin, B. N. Chichkov, “Formation and crystallization of silicon nanoclusters in SiN$_x$ :H films using femtosecond pulsed laser annealings”, Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1660–1665  mathnet  elib; Semiconductors, 44:12 (2010), 1611–1616 6
63. S. N. Shamin, V. R. Galakhov, V. I. Aksenova, A. N. Karpov, N. L. Shwartz, Z. Sh. Yanovitskaya, V. A. Volodin, I. V. Antonova, T. B. Ezhevskaya, J. Jedrzejewski, E. Savir, I. Balberg, “X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO$_2$ and Si sources”, Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  550–555  mathnet  elib; Semiconductors, 44:4 (2010), 531–536 8
64. D. V. Marin, V. A. Volodin, E. B. Gorokhov, D. V. Shcheglov, A. V. Latyshev, M. Vergnat, J. Koch, B. N. Chichkov, “Modification of germanium nanoclusters in GeO$_x$ films during isochronous furnace and pulse laser annealing”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  102–110  mathnet  elib; Tech. Phys. Lett., 36:5 (2010), 439–442 6
2009
65. V. A. Volodin, “Experimental discovery of the anisotropy of phonon-plasmon modes in GaAs/AlAs(100) superlattices”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:8 (2009),  483–485  mathnet; JETP Letters, 89:8 (2009), 419–421  isi  scopus 8
66. V. A. Volodin, E. V. Gorokhov, D. V. Marin, H. Rinnert, P. Miska, M. Vergnat, “Quasi-direct optical transitions in Ge nanocrystals embedded in GeO$_2$ matrix”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009),  84–88  mathnet; JETP Letters, 89:2 (2009), 76–79  isi  scopus 7
2007
67. V. A. Volodin, M. D. Efremov, G. A. Kachurin, A. G. Cherkov, M. Deutschmann, N. Baersch, “Phase transitions in $a$-Si:H films on a glass irradiated by high-power femtosecond pulses: Manifestation of nonlinear and nonthermal effects”, Pis'ma v Zh. Èksper. Teoret. Fiz., 86:2 (2007),  128–131  mathnet; JETP Letters, 86:2 (2007), 119–122  isi  scopus 19
2005
68. V. A. Volodin, M. D. Efremov, “Electron-phonon interaction in boron-doped silicon nanocrystals: Effect of Fano interference on the Raman spectrum”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:2 (2005),  91–94  mathnet; JETP Letters, 82:2 (2005), 86–88  isi  scopus 12
69. D. A. Orekhov, V. A. Volodin, M. D. Efremov, A. I. Nikiforov, V. V. Ul'yanov, O. P. Pchelyakov, “Phonon localization in Ge nanoislands and its manifestation in Raman spectra”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:7 (2005),  415–418  mathnet; JETP Letters, 81:7 (2005), 331–334  isi  scopus 8
2004
70. M. D. Efremov, V. A. Volodin, D. V. Marin, S. A. Arzhannikova, S. V. Goryainov, A. I. Korchagin, V. V. Cherepkov, A. V. Lavrukhin, S. N. Fadeev, R. A. Salimov, S. P. Bardakhanov, “Visible photoluminescence from silicon nanopowders produced by silicon evaporation in a high-power electron beam”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:8 (2004),  619–622  mathnet; JETP Letters, 80:8 (2004), 544–547  scopus 23
71. A. V. Dvurechenskii, Zh. V. Smagina, V. A. Zinov'ev, V. A. Armbrister, V. A. Volodin, M. D. Efremov, “Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:7 (2004),  411–415  mathnet; JETP Letters, 79:7 (2004), 333–336  scopus 5
2003
72. V. A. Volodin, Y. B. Gorokhov, M. D. Efremov, D. V. Marin, D. A. Orekhov, “Photoluminescence of GeO$_2$ films containing germanium nanocrystals”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:8 (2003),  485–488  mathnet; JETP Letters, 77:8 (2003), 411–414  scopus 18
1991
73. V. A. Volodin, A. M. Khapaev, “An exact solution of the relativistic Klein–Gordon wave equation”, Zh. Vychisl. Mat. Mat. Fiz., 31:6 (1991),  877–886  mathnet  mathscinet  zmath; U.S.S.R. Comput. Math. Math. Phys., 31:6 (1991), 69–76  isi

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