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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
A. V. Andrianov, A. N. Aleshin, S. N. Abolmasov, E. I. Terukov, A. O. Zahar'in, “Excitation of terahertz radiation in $p$–$n$-heterostructures based on $a$-Si:H/$c$-Si”, Fizika Tverdogo Tela, 65:5 (2023), 848–852   |
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2019 |
| 2. |
A. O. Zakhar'in, A. V. Andrianov, A. G. Petrov, “Stimulated terahertz emission in a system of excitons in photoexcited silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:12 (2019), 821–825 ; JETP Letters, 109:12 (2019), 781–785   |
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2018 |
| 3. |
A. V. Andrianov, A. O. Zakhar'in, A. G. Petrov, “Intraexciton and intracenter terahertz radiation from doped silicon under interband photoexcitation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 107:9 (2018), 564–568 ; JETP Letters, 107:9 (2018), 540–543 |
2
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2017 |
| 4. |
A. O. Zahar'in, Yu. B. Vasil'ev, N. A. Sobolev, V. V. Zabrodskii, S. V. Egorov, A. V. Andrianov, “Injection-induced terahertz electroluminescence from silicon $p$–$n$ structures”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 632–636 ; Semiconductors, 51:5 (2017), 604–607 |
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2016 |
| 5. |
Yu. B. Vasil'ev, N. N. Mikhailov, G. Yu. Vasil'eva, Yu. L. Ivanov, A. O. Zahar'in, A. V. Andrianov, L. E. Vorob'ev, D. A. Firsov, M. N. Grigor'ev, A. V. Antonov, A. V. Ikonnikov, V. I. Gavrilenko, “Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 932–936 ; Semiconductors, 50:7 (2016), 915–919 |
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| 6. |
A. V. Andrianov, A. O. Zahar'in, R. Kh. Zhukavin, V. N. Shastin, D. V. Shengurov, N. V. Abrosimov, “Terahertz emission at impurity electrical breakdown in Si(Li)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 18–23 ; Tech. Phys. Lett., 42:10 (2016), 1031–1033 |
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2015 |
| 7. |
A. O. Zahar'in, A. V. Bobylev, S. V. Egorov, A. V. Andrianov, “Terahertz emission upon the band-to-band excitation of Group-IV semiconductors at room temperature”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 314–318 ; Semiconductors, 49:3 (2015), 305–308 |
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| 8. |
V. I. Sankin, A. V. Andrianov, A. O. Zahar'in, A. G. Petrov, “Terahertz-emission generation caused by new effects in the 6H-SiC natural superlattice”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 249–253 ; Semiconductors, 49:2 (2015), 242–246 |
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2014 |
| 9. |
A. V. Andrianov, A. O. Zahar'in, R. Kh. Zhukavin, V. N. Shastin, N. V. Abrosimov, A. V. Bobylev, “Terahertz intracenter photoluminescence of silicon with lithium at interband excitation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 876–880 ; JETP Letters, 100:12 (2014), 771–775 |
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2013 |
| 10. |
A. V. Andrianov, P. S. Alekseev, G. V. Klimko, S. V. Ivanov, V. L. Shcheglov, M. A. Sedova, A. O. Zahar'in, “Generation of coherent terahertz radiation by polarized electron-hole pairs in GaAs/AlGaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1441–1445 ; Semiconductors, 47:11 (2013), 1433–1437 |
1
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2012 |
| 11. |
A. O. Zahar'in, A. V. Bobylev, A. V. Andrianov, “Terahertz emission upon the interband excitation of GaN layers”, Fizika i Tekhnika Poluprovodnikov, 46:9 (2012), 1158–1162 ; Semiconductors, 46:9 (2012), 1135–1139 |
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2011 |
| 12. |
V. I. Sankin, A. V. Andrianov, A. O. Zahar'in, A. G. Petrov, “Terahertz radiation induced by the Wannier-Stark localization of electrons in a natural silicon carbide superlattice”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:5 (2011), 393–396 ; JETP Letters, 94:5 (2011), 362–365 |
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2010 |
| 13. |
A. V. Andrianov, A. O. Zahar'in, Yu. L. Ivanov, M. S. Kipa, “Terahertz impurity luminescence under the interband photoexcitation of semiconductors”, Pis'ma v Zh. Èksper. Teoret. Fiz., 91:2 (2010), 102–105 ; JETP Letters, 91:2 (2010), 96–99 |
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| 14. |
D. A. Firsov, V. A. Shalygin, V. Yu. Panevin, G. A. Melentev, A. N. Sofronov, L. E. Vorob'ev, A. V. Andrianov, A. O. Zahar'in, V. S. Mikhrin, A. P. Vasil'ev, A. E. Zhukov, L. V. Gavrilenko, V. I. Gavrilenko, A. V. Antonov, V. Ya. Aleshkin, “Terahertz emission and photoconductivity in $n$-type GaAs/AlGaAs quantum wells: the role of resonant impurity states”, Fizika i Tekhnika Poluprovodnikov, 44:11 (2010), 1443–1446 ; Semiconductors, 44:11 (2010), 1394–1397 |
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2006 |
| 15. |
A. V. Andrianov, A. O. Zahar'in, I. N. Yassievich, “Linearly polarized terahertz radiation in uniaxially deformed Ge(Ga) upon the electric breakdown of an impurity”, Pis'ma v Zh. Èksper. Teoret. Fiz., 83:8 (2006), 410–413 ; JETP Letters, 83:8 (2006), 351–354 |
6
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2004 |
| 16. |
A. V. Andrianov, A. O. Zahar'in, I. N. Yassievich, N. N. Zinov'ev, “Terahertz electroluminescence under conditions of shallow acceptor breakdown in germanium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:8 (2004), 448–451 ; JETP Letters, 79:8 (2004), 365–367 |
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