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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
D. O. Filatov, E. D. Sorochkina, D. A. Antonov, I. N. Antonov, O. N. Gorshkov, “In situ investigation of filament growth in yttria stabilized zirconia films by contact capacitance atomic force microscopy”, Fizika Tverdogo Tela, 67:8 (2025), 1441–1445   |
| 2. |
A. V. Kruglov, D. A. Serov, A. I. Belov, M. N. Koryazhkina, I. N. Antonov, S. Yu. Zubkov, R. N. Kriukov, D. A. Antonov, D. O. Filatov, V. A. Khabibulova, A. N. Mikhaylov, O. N. Gorshkov, “Influence of oxygen vacancy concentration on the resistive switching parameters of ZrO$_2$(Y)-based memristor structures”, Zhurnal Tekhnicheskoi Fiziki, 95:9 (2025), 1733–1743 |
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2024 |
| 3. |
A. V. Kruglov, D. A. Serov, A. I. Belov, M. N. Koryazhkina, I. N. Antonov, S. Yu. Zubkov, R. N. Kriukov, A. N. Mikhaylov, D. O. Filatov, O. N. Gorshkov, “Memristors for non-volatile resistive memory based on an Al$_2$O$_3$/ZrO$_2$(Y) dielectric bilayer”, Zhurnal Tekhnicheskoi Fiziki, 94:11 (2024), 1833–1842 |
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2023 |
| 4. |
V. D. Krevchik, D. O. Filatov, M. B. Semenov, “Formation of Au nanoparticles in SiO$_2$–TiO$_2$ films by local electrochemical reduction using an atomic force microscope probe”, University proceedings. Volga region. Physical and mathematical sciences, 2023, no. 3, 116–126 |
| 5. |
V. D. Krevchik, M. B. Semenov, D. O. Filatov, D. A. Antonov, “The effect of temperature on dissipative electron tunneling through co nanoparticles in HfO$_2$ films”, University proceedings. Volga region. Physical and mathematical sciences, 2023, no. 2, 108–121 |
| 6. |
D. O. Filatov, O. N. Gorshkov, V. G. Shengurov, S. A. Denisov, M. E. Shenina, V. E. Kotomina, I. N. Antonov, A. V. Kruglov, “Resistive switching of memristors base on epitaxial structures $p$-Si/$p$-Ge/$n^+$-Si(001) with Ru and Ag electrodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:1 (2023), 5–8 |
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2022 |
| 7. |
D. O. Filatov, A. S. Novikov, M. E. Shenina, I. N. Antonov, A. V. Nezhdanov, I. A. Kazantseva, O. N. Gorshkov, “Scanning Kelvin Probe Microscopy investigation of optically induced charge in Au nanoparticles embedded into ZrO$_2$(Y) films”, Zhurnal Tekhnicheskoi Fiziki, 92:12 (2022), 1937–1942 |
| 8. |
P. B. Boldyrevskii, D. O. Filatov, V. A. Belyakov, A. P. Gorshkov, I. V. Makartsev, A. V. Nezhdanov, M. V. Revin, À. D. Filatov, P. A. Yunin, “Effect of substrate misorientation on the properties of $p$-HEMT GaAs-based nanoheterostructures formed during MOCVD epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 92:10 (2022), 1582–1587 |
| 9. |
Mikhail B. Semenov, Vladimir D. Krevchik, Dmitry O. Filatov, Dmitry A. Antonov, Alexey V. Shorokhov, Alexander P. Shkurinov, Ilya A. Ozheredov, Pavel V. Krevchik, Alexey V. Razumov, Alexey S. Kotov, Ilya S. Antonov, Ivan M. Semenov, “Features of tunneling current-voltage characteristics in dielectric films with Ni, Fe and Co nanoparticles, investigated by conductive AFM and within the framework of the theory of 1D-dissipative tunneling”, Nanosystems: Physics, Chemistry, Mathematics, 13:6 (2022), 621–627 |
| 10. |
M. N. Koryazhkina, D. O. Filatov, M. E. Shenina, I. N. Antonov, A. V. Kruglov, A. V. Ershov, A. P. Gorshkov, S. A. Denisov, V. Yu. Chalkov, V. G. Shengurov, “Investigation of the effect of optical radiation on resistive switching of MIS-structures based on ZrO$_2$(Y) on Si(001) substrates with Ge nanoislands”, Fizika i Tekhnika Poluprovodnikov, 56:8 (2022), 723–727 |
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2021 |
| 11. |
D. A. Antonov, D. O. Filatov, A. S. Novikov, A. V. Kruglov, I. N. Antonov, A. V. Zdoroveyshchev, O. N. Gorshkov, “Resistive switching in individual ferromagnetic filaments in ZrO$_{2}$(Y)/Ni based memristive stacks”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1474–1478 |
| 12. |
M. B. Semenov, V. D. Krevchik, D. O. Filatov, A. V. Shorokhov, A. P. Shkurinov, I. A. Ozheredov, P. V. Krevchik, Y. H. Wang, T. R. Li, A. K. Malik, M. O. Marychev, N. V. Baidus, I. M. Semenov, “Dissipative electron tunneling in vertically coupled asymmetric double InAs/GaAs(001) quantum dots”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1431–1440 ; Tech. Phys., 67:2 (2022), 115–125 |
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| 13. |
D. O. Filatov, M. E. Shenina, I. A. Rozhentsov, M. N. Koryazhkina, A. S. Novikov, I. N. Antonov, A. V. Ershov, A. P. Gorshkov, O. N. Gorshkov, “Effect of optical illumination on resistive switching in MOS stacks based on ZrO$_2$(Y) films with Au nanoparticles”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 754–757 ; Semiconductors, 55:9 (2021), 731–734 |
| 14. |
V. A. Vorontsov, D. A. Antonov, A. V. Kruglov, I. N. Antonov, V. E. Kotomina, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, D. O. Filatov, O. N. Gorshkov, “Demonstration of resistive switching effect in separate filaments in Ag/Ge/Si memristor structures by conductive atomic force microscopy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021), 23–26 |
| 15. |
D. A. Antonov, A. S. Novikov, D. O. Filatov, A. V. Kruglov, I. N. Antonov, A. V. Zdoroveyshchev, O. N. Gorshkov, “The formation of nanosized ferromagnetic Ni filaments in films of ZrO$_2$(Y)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:11 (2021), 30–32 ; Tech. Phys. Lett., 47:7 (2021), 539–541 |
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2020 |
| 16. |
D. O. Filatov, D. A. Antonov, I. N. Antonov, A. I. Belov, V. N. Baranova, M. E. Shenina, O. N. Gorshkov, “Resistive switching of memristors based on stabilized zirconia by complex signals”, Fizika Tverdogo Tela, 62:4 (2020), 556–561 ; Phys. Solid State, 62:4 (2020), 642–647 |
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| 17. |
D. O. Filatov, D. A. Antonov, I. N. Antonov, M. A. Ryabova, O. N. Gorshkov, “An atomic force microscopic study of resistive switching resonance activation in ZrO$_{2}$(Y) films”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1825–1829 ; Tech. Phys., 65:11 (2020), 1744–1747 |
| 18. |
M. B. Semenov, V. D. Krevchik, D. O. Filatov, A. V. Shorokhov, A. P. Shkurinov, P. V. Krevchik, Y. H. Wang, T. R. Li, A. K. Malik, D. A. Antonov, I. M. Semenov, “Features of two-dimensional bifurcations during dissipative electron tunneling in arrays of Au nanoparticles”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1797–1805 ; Tech. Phys., 65:11 (2020), 1717–1725 |
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| 19. |
S. V. Tikhov, V. G. Shengurov, S. A. Denisov, I. N. Antonov, A. V. Kruglov, A. I. Belov, D. O. Filatov, O. N. Gorshkov, A. N. Mikhaylov, “Resistive switching in metal–oxide–semiconductor structures with GeSi nanoislands on a silicon substrate”, Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020), 1741–1749 ; Tech. Phys., 65:10 (2020), 1668–1676 |
| 20. |
P. B. Boldyrevskii, D. O. Filatov, À. D. Filatov, I. A. Kazantseva, M. V. Revin, P. A. Yunin, “Atomic force microscopy examination of elementary processes in metalorganic compound hydride epitaxy of GaAs-based nanoheterostructures”, Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020), 826–830 ; Tech. Phys., 65:5 (2020), 791–794 |
| 21. |
O. N. Gorshkov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, I. N. Antonov, A. V. Kruglov, M. E. Shenina, V. E. Kotomina, D. O. Filatov, D. A. Serov, “Resistive switching in memristors based on Ag/Ge/Si heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 44–46 ; Tech. Phys. Lett., 46:1 (2020), 91–93 |
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2019 |
| 22. |
D. O. Filatov, M. N. Koryazhkina, D. A. Antonov, I. N. Antonov, D. A. Liskin, M. A. Ryabova, O. N. Gorshkov, “Atomic-force microscopy of resistive nonstationary signal switching in ZrO$_{2}$(Y) films”, Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019), 1669–1673 ; Tech. Phys., 64:11 (2019), 1579–1583 |
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| 23. |
D. S. Prokhorov, V. G. Shengurov, S. A. Denisov, D. O. Filatov, A. V. Zdoroveyshchev, V. Yu. Chalkov, A. V. Zaitsev, M. V. Ved, M. V. Dorokhin, N. A. Baidakova, “Enhanced photoluminescence of heavily doped $n$-Ge/Si(001) layers”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1293–1296 ; Semiconductors, 53:9 (2019), 1262–1265 |
| 24. |
V. G. Shengurov, D. O. Filatov, S. A. Denisov, V. Yu. Chalkov, N. A. Alyabina, A. V. Zaitsev, “Tunnel diodes based on $n^{+}$-Ge/$p^{+}$-Si(001) epitaxial structures grown by the hot-wire chemical vapor deposition”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1267–1270 ; Semiconductors, 53:9 (2019), 1238–1241 |
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2018 |
| 25. |
P. B. Boldyrevskii, D. O. Filatov, I. A. Kazantseva, M. V. Revin, D. S. Smotrin, P. A. Yunin, “Influence of the rotation frequency of a disk substrate holder on the crystal structure characteristics of MOCVD-grown GaAs layers”, Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018), 219–223 ; Tech. Phys., 63:2 (2018), 211–215 |
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| 26. |
M. B. Semenov, V. D. Krevchik, O. N. Gorshkov, D. O. Filatov, Y. Dakhnovsky, A.V. Nikolaev, A. P. Shkurinov, V. Yu. Timoshenko, P. V. Krevchik, A. K. Malik, Y. H. Wang, T. R. Li, Y. Zhu, S. Zhuang, R. V. Zaitsev, I. S. Antonov, I. M. Semenov, A. K. Aringazin, A. V. Shorokhov, Y. H. Wang, “A comparative analysis of the observed effects of 2d tunneling bifurcations for quasi-one-dimensional and quasi-two-dimensional au-qd systems in an external electric field”, Nanosystems: Physics, Chemistry, Mathematics, 9:6 (2018), 724–734  |
| 27. |
P. A. Dementev, M. S. Dunaevskii, L. B. Matyshkin, A. V. Nezhdanov, A. N. Smirnov, D. O. Filatov, “Study of CsPbBr$_{3}$ nanocrystals and their agglomerates by combined scanning probe microscopy and optical spectrometry”, Optics and Spectroscopy, 125:6 (2018), 752–757 ; Optics and Spectroscopy, 125:6 (2018), 858–863 |
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| 28. |
M. M. Ivanova, A. N. Kachemtsev, A. N. Mikhaylov, D. O. Filatov, A. P. Gorshkov, N. S. Volkova, V. Yu. Chalkov, V. G. Shengurov, “Effect of pulsed gamma-neutron irradiation on the photosensitivity of Si-based photodiodes with GeSi nanoislands and Ge epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 651–655 ; Semiconductors, 52:6 (2018), 797–801 |
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| 29. |
D. O. Filatov, D. V. Guseinov, V. Yu. Chalkov, S. A. Denisov, V. G. Shengurov, “Ballistic hole emission spectroscopy of self-assembled GeSi/Si(001) nanoislands”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 505 ; Semiconductors, 52:5 (2018), 590–592 |
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| 30. |
D. O. Filatov, I. N. Antonov, D. Yu. Sinutkin, D. A. Liskin, A. P. Gorshkov, O. N. Gorshkov, V. E. Kotomina, M. E. Shenina, S. V. Tikhov, I. S. Korotaeva, “Plasmon resonance induced photoconductivity in the yttria stabilized zirconia films with embedded Au nanoclusters”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 470 ; Semiconductors, 52:4 (2018), 465–467 |
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| 31. |
D. O. Filatov, V. V. Karzanov, I. N. Antonov, O. N. Gorshkov, “Features of switching memristor structures to a high-resistance state by sawtooth pulses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 88–93 ; Tech. Phys. Lett., 44:12 (2018), 1160–1162 |
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2017 |
| 32. |
D. O. Filatov, I. A. Kazantseva, V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, A. P. Gorshkov, V. P. Mishkin, “Investigation of spatial distribution of photocurrent in the plane of a Si $p$–$n$ photodiode with GeSi nanoislands by scanning near-field optical microscopy”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 563–568 ; Semiconductors, 51:4 (2017), 536–541 |
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2016 |
| 33. |
F. V. Kusmartsev, V. D. Krevchik, M. B. Semenov, D. O. Filatov, A. V. Shorokhov, A. A. Bukharaev, Yu. I. Dakhnovsky, A.V. Nikolaev, N. A. Pyataev, R. V. Zaytsev, P. V. Krevchik, I. A. Egorov, K. Yamamoto, A. K. Aringazin, “Phonon assisted resonant tunneling and its phonons control”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:6 (2016), 406–412 ; JETP Letters, 104:6 (2016), 392–397  |
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| 34. |
V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, S. A. Matveev, A. V. Nezhdanov, A. I. Mashin, D. O. Filatov, M. V. Stepikhova, Z. F. Krasil'nik, “Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1270–1275 ; Semiconductors, 50:9 (2016), 1248–1253 |
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| 35. |
D. O. Filatov, I. A. Kazantseva, V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, N. A. Alyabina, “A random telegraph signal in tunneling silicon $p$–$n$ junctions with GeSi nanoislands”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016), 94–101 ; Tech. Phys. Lett., 42:4 (2016), 435–437 |
| 36. |
O. N. Gorshkov, I. N. Antonov, D. O. Filatov, M. E. Shenina, A. P. Kasatkin, D. A. Pavlov, A. I. Bobrov, “Forming dense arrays of gold nanoparticles in thin films of yttria stabilized zirconia by magnetron sputtering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016), 72–79 ; Tech. Phys. Lett., 42:1 (2016), 36–39 |
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2015 |
| 37. |
V. D. Krevchik, M. B. Semenov, D. O. Filatov, P. V. Krevchik, I. A. Egorov, M. A. Sultanov, I. K. Skorosova, “Ionic tunneling conductivity mechanism for growing colloidal gold quantum dots”, University proceedings. Volga region. Physical and mathematical sciences, 2015, no. 3, 163–176 |
| 38. |
V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, N. A. Alyabina, D. V. Guseinov, V. N. Trushin, A. P. Gorshkov, N. S. Volkova, M. M. Ivanova, A. V. Kruglov, D. O. Filatov, “Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1411–1414 ; Semiconductors, 49:10 (2015), 1365–1368 |
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| 39. |
D. O. Filatov, A. P. Gorshkov, N. S. Volkova, D. V. Guseinov, N. A. Alyabina, M. M. Ivanova, V. Yu. Chalkov, S. A. Denisov, V. G. Shengurov, “Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 399–405 ; Semiconductors, 49:3 (2015), 387–393 |
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| 40. |
N. S. Volkova, A. P. Gorshkov, S. V. Tikhov, N. V. Baidus, S. V. Khazanova, V. E. Degtyarov, D. O. Filatov, “Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 145–148 ; Semiconductors, 49:2 (2015), 139–142 |
| 41. |
O. N. Gorshkov, M. E. Shenina, A. P. Kasatkin, D. A. Pavlov, I. N. Antonov, A. I. Bobrov, D. O. Filatov, “Formation of Au$_4$Zr nanocrystals in yttria stabilized zirconia in the course of implantation of gold ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:11 (2015), 62–70 ; Tech. Phys. Lett., 41:6 (2015), 543–546 |
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2014 |
| 42. |
V. D. Krevchik, M. B. Semenov, R. V. Zaitsev, D. O. Filatov, P. V. Krevchik, A. A. Bukharaev, A. K. Aryngazin, “Influence of the wideband matrix promote phonon modes on tunnel cvc of semiconductor quantum dots”, University proceedings. Volga region. Physical and mathematical sciences, 2014, no. 2, 132–150 |
| 43. |
N. S. Volkova, A. P. Gorshkov, D. O. Filatov, D. S. Abramkin, “Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:3 (2014), 175–180 ; JETP Letters, 100:3 (2014), 156–161 |
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2013 |
| 44. |
I. A. Zimovets, D. O. Filatov, “Simulation of electro-optical processes in the diode, based on $N^+-SI/N-SI:ER/P^+-SI$ structure under the reverse bias and ways to improve the reliability of modeling agencies”, Meždunar. nauč.-issled. žurn., 2013, no. 1(8), 11–14 |
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2011 |
| 45. |
D. O. Filatov, I. A. Zimovets, M. A. Isakov, V. P. Kuznetsov, A. V. Kornaukhov, “Investigation of energy levels of Er-impurity centers in Si by the method of ballistic electron emission spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 45:9 (2011), 1153–1158 ; Semiconductors, 45:9 (2011), 1111–1116 |
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| 46. |
P. A. Borodin, A. A. Bukharaev, D. O. Filatov, M. A. Isakov, V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, “Investigation of the local density of states in self-assembled GeSi/Si(001) nanoislands by combined scanning tunneling and atomic-force microscopy”, Fizika i Tekhnika Poluprovodnikov, 45:3 (2011), 414–418 ; Semiconductors, 45:3 (2011), 403–407 |
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| 47. |
A. A. Ezhevskii, M. O. Marychev, A. V. Kornaukhov, D. O. Filatov, V. G. Shengurov, “On the nature of electroluminescence at 1.5 $\mu$m in the breakdown mode of reverse-biased Er-doped silicon $p$–$n$-junction structures grown by sublimation molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 45:1 (2011), 87–92 ; Semiconductors, 45:1 (2011), 85–90 |
| 48. |
A. V. Nezhdanov, D. O. Filatov, D. A. Antonov, S. Yu. Zubkov, A. I. Mashin, A. V. Ershov, “The morphology, electron structure, and optical properties of self-assembled silicon nanostructures on the surface of highly oriented pyrolytic graphite”, Fizika i Tekhnika Poluprovodnikov, 45:1 (2011), 57–61 ; Semiconductors, 45:1 (2011), 56–60 |
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2010 |
| 49. |
A. I. Mashin, A. V. Nezhdanov, D. O. Filatov, M. A. Isakov, V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, “Confocal Raman microscopy of self-assembled GeSi/Si(001) Islands”, Fizika i Tekhnika Poluprovodnikov, 44:11 (2010), 1552–1558 ; Semiconductors, 44:11 (2010), 1504–1510 |
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| 50. |
Yu. K. Verevkin, V. N. Petryakov, V. N. Burenina, D. O. Filatov, D. A. Vorontsov, “Nanoporous titania films produced by pulsed interference lithography”, Kvantovaya Elektronika, 40:10 (2010), 925–927 [Quantum Electron., 40:10 (2010), 925–927 ] |
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2009 |
| 51. |
V. Ch. Zhukovskii, O. N. Gorshkov, V. D. Krevchik, M. B. Semenov, Yu. G. Smirnov, E. V. Chuprunov, V. A. Rudin, N. Yu. Skibitskaya, P. V. Krevchik, D. O. Filatov, D. A. Antonov, M. A. Lapshina, M. E. Shenina, Ya. Kendji, “Features of two-dimensional tunnel bifurcations under conditions of an external electric field”, University proceedings. Volga region. Physical and mathematical sciences, 2009, no. 2, 123–135 |
| 52. |
E. S. Demidov, V. V. Podol'skii, V. P. Lesnikov, S. A. Levchuk, S. N. Gusev, V. V. Karzanov, D. O. Filatov, “Anomalous ferromagnetic resonance in manganese- and aluminum-doped germanium layers deposited from the laser plasma”, Pis'ma v Zh. Èksper. Teoret. Fiz., 90:12 (2009), 852–855 ; JETP Letters, 90:12 (2009), 754–757 |
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