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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
A. I. Abanin, R. M. Ryazanov, A. D. Golikov, V. V. Kovalyuk, I. O. Venediktov, P. P. An, D. A. Shimlovskaya, E. P. Kitsyuk, S. S. Kosolobov, P. I. Lazarenko, G. N. Gol'tsman, V. V. Svetukhin, “Разработка технологии создания фотонных интегральных схем с кольцевыми микрорезонаторами на основе структур Si/SiO$_2$/Si$_3$N$_4$”, Optics and Spectroscopy, 133:9 (2025), 957–962  |
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2024 |
| 2. |
E. P. Kozhina, S. A. Bedin, S. S. Kosolobov, I. M. Doludenko, A. P. Tselin, Kh. Bhatta, V. P. Drachev, “The impact of local heating on the oxidation process of cobalt nanowires”, Kvantovaya Elektronika, 54:7 (2024), 446–449 [Bull. Lebedev Physics Institute, 51:suppl. 10 (2024), S848–S853] |
| 3. |
S. S. Kosolobov, I. A. Pshenichnyuk, K. R. Taziev, A. K. Zemtsova, D. S. Zemtsov, A. S. Smirnov, D. M. Zhigunov, V. P. Drachev, “Silicon integrated photonics”, UFN, 194:11 (2024), 1223–1239 ; Phys. Usp., 67:11 (2024), 1153–1167   |
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2023 |
| 4. |
D. S. Zemtsov, A. K. Zemtsova, A. S. Smirnov, K. N. Garbuzov, R. S. Starikov, S. S. Kosolobov, V. P. Drachev, “High-efficiency and easy-to-fabricate integrated plasmonic grating couplers for the telecommunication wavelength range”, Computer Optics, 47:2 (2023), 224–229 |
4
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| 5. |
I. A. Pshenichnyuk, K. N. Garbuzov, D. S. Zemtsov, Yu. G. Gladush, S. S. Kosolobov, “Change in transmittance of indium-tin-oxide-coated silicon waveguides exposed to intense light pulses”, Kvantovaya Elektronika, 53:11 (2023), 842–845 [Bull. Lebedev Physics Institute, 51:suppl. 2 (2024), S123–S128] |
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2019 |
| 6. |
A. S. Petrov, S. V. Sitnikov, S. S. Kosolobov, A. V. Latyshev, “Micro-pits evolution on large terraces of Si(111) surface during high-temperature annealing”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 456–461  ; Semiconductors, 53:4 (2019), 434–438 |
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2018 |
| 7. |
I. A. Pshenichnyuk, S. S. Kosolobov, A. I. Maimistov, V. P. Drachev, “Conversion of light polarisation in asymmetric plasmonic waveguides”, Kvantovaya Elektronika, 48:12 (2018), 1153–1156 [Quantum Electron., 48:12 (2018), 1153–1156 ] |
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2017 |
| 8. |
S. V. Sitnikov, S. S. Kosolobov, A. V. Latyshev, “Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 212–215 ; Semiconductors, 51:2 (2017), 203–206 |
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2016 |
| 9. |
S. V. Sitnikov, A. V. Latyshev, S. S. Kosolobov, “Atomic steps on an ultraflat Si(111) surface upon sublimation”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 607–611 ; Semiconductors, 50:5 (2016), 596–600 |
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2014 |
| 10. |
N. S. Filippov, N. V. Vandysheva, M. A. Parashchenko, S. S. Kosolobov, O. I. Semenova, R. O. Anarbaev, D. V. Pyshnyi, I. A. Pyshnaya, S. I. Romanov, “Electrophoretic deposition of CdS colloidal nanoparticles onto an amorphous silicon membrane”, Fizika i Tekhnika Poluprovodnikov, 48:7 (2014), 995–1001 ; Semiconductors, 48:7 (2014), 967–973 |
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2011 |
| 11. |
E. E. Podyakina, S. S. Kosolobov, A. V. Latyshev, “Drift of adatoms on the (111) silicon surface under electromigration conditions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:2 (2011), 151–156 ; JETP Letters, 94:2 (2011), 147–151 |
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2010 |
| 12. |
A. K. Rebrov, A. I. Safonov, N. I. Timoshenko, V. A. Varnek, I. M. Oglezneva, S. S. Kosolobov, “Gas-jet synthesis of silver-polymer films”, Prikl. Mekh. Tekh. Fiz., 51:4 (2010), 176–182 ; J. Appl. Mech. Tech. Phys., 51:4 (2010), 598–603 |
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2005 |
| 13. |
S. S. Kosolobov, S. A. Song, L. I. Fedina, A. K. Gutakovskii, A. V. Latyshev, “Instability of the distribution of atomic steps on Si(111) upon submonolayer gold adsorption at high temperatures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:3 (2005), 149–153 ; JETP Letters, 81:3 (2005), 117–121 |
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