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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
K. V. Feklistov, A. G. Cherkov, V. P. Popov, L. I. Fedina, “Redistribution of erbium and oxygen recoil atoms and the structure of silicon thin surface layers formed by high-dose argon implantation through Er and SiO$_{2}$ surface films”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1589–1596   ; Semiconductors, 52:13 (2018), 1696–1703 |
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2017 |
| 2. |
I. E. Tyschenko, A. G. Cherkov, “Diffusion-Controlled growth of Ge nanocrystals in SiO$_{2}$ films under conditions of ion synthesis at high pressure”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1414–1419 ; Semiconductors, 51:10 (2017), 1364–1369 |
| 3. |
I. E. Tyschenko, A. G. Cherkov, V. A. Volodin, M. Voelskow, “Specific features of the ion-beam synthesis of Ge nanocrystals in SiO$_{2}$ thin films”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1289–1294 ; Semiconductors, 51:9 (2017), 1240–1246 |
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2014 |
| 4. |
I. E. Tyschenko, M. Voelskow, A. G. Cherkov, V. P. Popov, “Ion-beam synthesis of InSb nanocrystals in the buried SiO$_2$ layer of a silicon-on-insulator structure”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1228–1233 ; Semiconductors, 48:9 (2014), 1196–1201 |
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2013 |
| 5. |
I. E. Tyschenko, V. A. Volodin, M. Voelskow, A. G. Cherkov, V. P. Popov, “Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 591–597 ; Semiconductors, 47:5 (2013), 606–611 |
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| 6. |
G. A. Kachurin, S. G. Cherkova, D. V. Marin, V. A. Volodin, A. G. Cherkov, A. Kh. Antonenko, G. N. Kamaev, V. A. Skuratov, “Influence of irradiation with swift heavy ions on multilayer Si/SiO$_2$ heterostructures”, Fizika i Tekhnika Poluprovodnikov, 47:3 (2013), 334–339 ; Semiconductors, 47:3 (2013), 358–364 |
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2011 |
| 7. |
V. A. Volodin, A. S. Kacko, A. G. Cherkov, A. V. Latyshev, J. Koch, B. N. Chichkov, “Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:10 (2011), 665–668 ; JETP Letters, 93:10 (2011), 603–606   |
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2007 |
| 8. |
V. A. Volodin, M. D. Efremov, G. A. Kachurin, A. G. Cherkov, M. Deutschmann, N. Baersch, “Phase transitions in $a$-Si:H films on a glass irradiated by high-power femtosecond pulses: Manifestation of nonlinear and nonthermal effects”, Pis'ma v Zh. Èksper. Teoret. Fiz., 86:2 (2007), 128–131 ; JETP Letters, 86:2 (2007), 119–122 |
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