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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
S. I. Bozhko, A. S. Ksenz, D. A. Fokin, A. M. Ionov, “Quantum effects in twinning boundary formation in Pb”, Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023), 928–930  |
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2020 |
| 2. |
A. V. Tronev, M. V. Parfenov, N. A. Solomonov, A. M. Ionov, S. I. Bozhko, I. V. Il'ichev, P. M. Agruzov, A. V. Shamray, “Laser modification of titanium film in optical waveguides on lithium niobate substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020), 51–54  ; Tech. Phys. Lett., 46:9 (2020), 885–888 |
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2018 |
| 3. |
S. I. Bozhko, A. S. Ksenz, A. M. Ionov, S. V. Chekmazov, E. A. Levchenko, “Ab initio modeling of the local violation of a Peierls transition at the Sb(111) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 107:12 (2018), 805–809 ; JETP Letters, 107:12 (2018), 780–784   |
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2016 |
| 4. |
A. G. Znamenskii, A. M. Ionov, V. A. Marchenko, “Gas release in the process of thermal treatment of sputtered Pb(Ti$_{0.48}$Zr$_{0.52}$)O$_{x}$ films”, Fizika Tverdogo Tela, 58:6 (2016), 1198–1205 ; Phys. Solid State, 58:6 (2016), 1239–1246 |
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2015 |
| 5. |
S. I. Bozhko, A. M. Ionov, A. N. Chaika, “Si(hhm) surfaces: Templates for developing nanostructures”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 772–778 ; Semiconductors, 49:6 (2015), 753–759 |
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2007 |
| 6. |
A. N. Chaika, S. I. Bozhko, A. M. Ionov, A. N. Myagkov, N. V. Abrosimov, “STM and LEED studies of the atomically ordered terraced Si(557) surfaces”, Fizika i Tekhnika Poluprovodnikov, 41:4 (2007), 445–449 ; Semiconductors, 41:4 (2007), 431–435 |
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2004 |
| 7. |
S. I. Bozhko, I. G. Naumenko, È. M. Samarov, V. M. Masalov, G. A. Emel'chenko, A. M. Ionov, D. A. Fokin, “Formation of two-dimensional ordered magnetic nanolattices in opal structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:7 (2004), 569–571 ; JETP Letters, 80:7 (2004), 500–502 |
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1988 |
| 8. |
A. M. Ionov, V. K. Sirotkin, E. V. Sumin, “Propagation of nonlinear longitudinal waves in porous saturated media”, Prikl. Mekh. Tekh. Fiz., 29:6 (1988), 138–144 ; J. Appl. Mech. Tech. Phys., 29:6 (1988), 894–899 |
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