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Publications in Math-Net.Ru |
Citations |
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2012 |
| 1. |
M. V. Strikha, “Mechanism of the antihysteresis behavior of the resistivity of graphene on a Pb(Zr$_x$Ti$_{1-x}$)O$_3$ ferroelectric substrate”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:4 (2012), 216–218   ; JETP Letters, 95:4 (2012), 198–200   |
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| 2. |
S. G. Gassan-zade, M. V. Strikha, G. A. Shepel'skii, “Evidence of the third $(A^+)$ level of the mercury vacancy in Cd$_x$Hg$_{1-x}$Te”, Fizika i Tekhnika Poluprovodnikov, 46:7 (2012), 905–909 ; Semiconductors, 46:7 (2012), 882–886 |
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2001 |
| 3. |
S. G. Gassan-zade, S. V. Staryi, M. V. Strikha, G. A. Shepel'skii, V. A. Boĭko, “Elastic state of stress in narrow-gap semiconductors: A fundamental possibility to increase the quantum yield of infrared radiation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:9 (2001), 561–564 ; JETP Letters, 73:9 (2001), 495–497 |
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1990 |
| 4. |
F. T. Vas'ko, M. V. Strikha, “Междузонные ИК переходы в одноосно деформированном узкощелевом
полупроводнике”, Fizika i Tekhnika Poluprovodnikov, 24:7 (1990), 1227–1233 |
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1988 |
| 5. |
V. A. Avramenko, M. V. Strikha, “Ударная ионизация в дырочном антимониде индия”, Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1117–1119 |
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1986 |
| 6. |
V. A. Avramenko, M. V. Strikha, “Collisional Ionization in Indium Antimonide”, Fizika i Tekhnika Poluprovodnikov, 20:10 (1986), 1835–1840 |
| 7. |
M. V. Strikha, “Auger Recombination of Holes via Deep Acceptor in $n$-Type GaSb”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 942–944 |
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1985 |
| 8. |
V. A. Avramenko, Yu. G. Rubo, M. V. Strikha, I. N. Yassievich, “On impurity auger-recombination”, Fizika Tverdogo Tela, 27:8 (1985), 2313–2319 |
| 9. |
M. V. Strikha, I. N. Yassievich, “Auger Recombination via Donors”, Fizika i Tekhnika Poluprovodnikov, 19:9 (1985), 1715–1717 |
| 10. |
M. V. Strikha, “Impurity Auger Recombination in Silicon”, Fizika i Tekhnika Poluprovodnikov, 19:4 (1985), 697–702 |
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1984 |
| 11. |
M. V. Strikha, “Auger Recombination of Holes via Deep Donors in $n$-Type InSb”, Fizika i Tekhnika Poluprovodnikov, 18:3 (1984), 441–445 |
| 12. |
M. V. Strikha, I. N. Yassievich, “Impact Recombination of Electrons via Deep and Shallow Acceptors in $p$-Type Semiconductors”, Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 43–48 |
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