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Antonova, Irina Veniaminovna
Statistics Math-Net.Ru
Total publications: 19
Scientific articles: 19

Number of views:
This page:422
Abstract pages:2728
Full texts:1081
Associate professor
Doctor of physico-mathematical sciences
Birth date: 26.06.1957
E-mail: ,
Keywords: Straintronics, graphene, 2D materials, heterostructures, mechanical properties, band gap, electrical properties, photoluminescence, light scattering, light absorption, adjustment of optical properties, local deformations, corrugated monolayers, atomic adsorption, possible applications

https://www.mathnet.ru/eng/person78262
List of publications on Google Scholar

Publications in Math-Net.Ru Citations
2025
1. M. B. Shavelkina, I. V. Antonova, N. A. Nebogatikova, A. I. Ivanov, S. V. Kiseleva, N. I. Chernova, T. B. Shatalova, “Investigation of the influence of microalgae on the sensory properties of carbon materials”, Zhurnal Tekhnicheskoi Fiziki, 95:3 (2025),  633–642  mathnet  elib
2024
2. I. V. Antonova, V. A. Seleznev, N. A. Nebogatikova, A. I. Ivanov, V. S. Tumashev, “1D Chains of composite nanoparticles graphene : h-BN and fluorinated graphene : V$_2$O$_5$”, Fizika Tverdogo Tela, 66:3 (2024),  398–407  mathnet  elib
3. A. I. Ivanov, R. A. Soots, A. D. Pulik, I. V. Antonova, “Flexible memristors created by $2D$ printing based on graphene materials”, Zhurnal Tekhnicheskoi Fiziki, 94:8 (2024),  1410–1416  mathnet  elib
4. N. A. Nebogatikova, I. V. Antonova, R. A. Soots, K. A. Kokh, E. S. Klimova, V. A. Volodin, “Resistance change of thin films Bi$_2$Se$_3$ and heterostructures Bi$_2$Se$_3$ on graphene under tensile deformation”, Zhurnal Tekhnicheskoi Fiziki, 94:2 (2024),  261–266  mathnet  elib
5. I. V. Antonova, A. I. Ivanov, “Wearable noninvasive glucose sensors based on graphene and other carbon materials”, UFN, 194:5 (2024),  520–545  mathnet; Phys. Usp., 67:5 (2024), 487–509  isi  scopus 4
2022
6. I. V. Antonova, “Straintronics of 2D inorganic materials for electronic and optical applications”, UFN, 192:6 (2022),  609–641  mathnet; Phys. Usp., 65:6 (2022), 567–596  isi  scopus 12
2020
7. S. A. Smagulova, P. V. Vinokurov, A. A. Semyonova, E. I. Popova, F. D. Vasylieva, E. D. Obraztsova, P. V. Fedotov, I. V. Antonova, “Study of the properties of two-dimensional ÌîS$_{2}$ and WS$_{2}$ films synthesized by chemical-vapor deposition”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  376–387  mathnet  elib; Semiconductors, 54:4 (2020), 454–464 8
2017
8. A. I. Ivanov, N. A. Nebogatikova, I. I. Kurkina, I. V. Antonova, “Mechanism of resistive switching in films based on partially fluorinated graphene”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1357–1363  mathnet  elib; Semiconductors, 51:10 (2017), 1306–1312 4
9. I. V. Antonova, I. A. Kotin, O. M. Orlov, S. F. Devyatova, “Comparison of flash-memory elements using materials based on graphene”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  43–50  mathnet  elib; Tech. Phys. Lett., 43:10 (2017), 889–892 3
10. I. V. Antonova, “2D printing technologies using graphene-based materials”, UFN, 187:2 (2017),  220–234  mathnet  elib; Phys. Usp., 60:2 (2017), 204–218  isi  scopus 19
2016
11. I. V. Antonova, I. A. Kotin, V. I. Popov, F. D. Vasylieva, A. N. Kapitonov, S. A. Smagulova, “Graphene-oxide films printed on rigid and flexible substrates for a wide spectrum of applications”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1086–1094  mathnet  elib; Semiconductors, 50:8 (2016), 1065–1073 8
12. I. V. Antonova, “Vertical heterostructures based on graphene and other 2D materials”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  67–82  mathnet  elib; Semiconductors, 50:1 (2016), 66–82 42
13. R. A. Soots, E. A. Yakimchuk, N. A. Nebogatikova, I. A. Kotin, I. V. Antonova, “Graphene suspensions for 2D printing”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  102–110  mathnet  elib; Tech. Phys. Lett., 42:4 (2016), 438–441 16
2015
14. I. V. Antonova, I. A. Kotin, N. A. Nebogatikova, V. Ya. Prinz, “Modulation of current in self-forming lateral graphene-based heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015),  64–72  mathnet  elib; Tech. Phys. Lett., 41:10 (2015), 950–953 4
2014
15. I. V. Antonova, S. V. Golod, R. A. Soots, A. I. Komonov, V. A. Seleznev, M. A. Sergeev, V. A. Volodin, V. Ya. Prinz, “Comparison of various methods for transferring graphene and few layer graphene grown by chemical vapor deposition to an insulating SiO$_2$/Si substrate”, Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  827–823  mathnet  elib; Semiconductors, 48:6 (2014), 804–808 15
2013
16. I. V. Antonova, “Chemical vapor deposition growth of graphene on copper substrates: current trends”, UFN, 183:10 (2013),  1115–1122  mathnet  elib; Phys. Usp., 56:10 (2013), 1013–1020  isi 32
2011
17. I. V. Antonova, S. A. Smagulova, E. P. Neustroev, V. A. Skuratov, J. Jedrzejewski, E. Savir, I. Balberg, “Charge spectroscopy of SiO$_2$ layers with embedded silicon nanocrystals modified by irradiation with high-energy ions”, Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  591–595  mathnet  elib; Semiconductors, 45:5 (2011), 582–586 2
2010
18. S. N. Shamin, V. R. Galakhov, V. I. Aksenova, A. N. Karpov, N. L. Shwartz, Z. Sh. Yanovitskaya, V. A. Volodin, I. V. Antonova, T. B. Ezhevskaya, J. Jedrzejewski, E. Savir, I. Balberg, “X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO$_2$ and Si sources”, Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  550–555  mathnet  elib; Semiconductors, 44:4 (2010), 531–536 8
19. I. V. Antonova, V. A. Skuratov, J. Jedrzejewski, I. Balberg, “Ordered arrays of Si nanocrystals in SiO$_2$: Structural, optical, and electronic properties”, Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  501–506  mathnet  elib; Semiconductors, 44:4 (2010), 482–487 5

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