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Asryan, Levon Volodyaevich
Statistics Math-Net.Ru
Total publications: 23
Scientific articles: 23

Number of views:
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Abstract pages:8673
Full texts:4131
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https://www.mathnet.ru/eng/person83453
List of publications on Google Scholar
https://elibrary.ru/author_items.asp?authorid=23433

Publications in Math-Net.Ru Citations
2025
1. Z. N. Sokolova, L. V. Asryan, “Charge neutrality in semiconductor lasers”, Fizika i Tekhnika Poluprovodnikov, 59:8 (2025),  500–504  mathnet
2023
2. Z. N. Sokolova, L. V. Asryan, “Analysis of stability of generation in quantum well lasers”, Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  684–692  mathnet  elib
2022
3. M. E. Muretova, F. I. Zubov, L. V. Asryan, Yu. M. Shernyakov, M. V. Maksimov, A. E. Zhukov, “Design of blocking layers for suppression of parasitic recombination in high-power laser diodes with GaAs waveguide”, Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  363–369  mathnet  elib
2021
4. Z. N. Sokolova, N. A. Pikhtin, S. O. Slipchenko, L. V. Asryan, “Operating characteristics of semiconductor quantum well lasers as functions of the waveguide region thickness”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1229–1235  mathnet  elib
2020
5. F. I. Zubov, M. E. Muretova, A. S. Payusov, M. V. Maksimov, A. E. Zhukov, L. V. Asryan, “Parasitic recombination in a laser with asymmetric barrier layers”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  296–303  mathnet  elib; Semiconductors, 54:3 (2020), 366–373 5
2019
6. L. V. Asryan, “Quantum dot lasers with asymmetric barrier layers: Close-to-ideal threshold and power characteristics”, Kvantovaya Elektronika, 49:6 (2019),  522–528  mathnet  elib [Quantum Electron., 49:6 (2019), 522–528  isi  scopus] 9
2018
7. L. V. Asryan, F. I. Zubov, Yu. S. Balezina (Polubavkina), È. I. Moiseev, M. E. Muretova, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1518–1526  mathnet  elib; Semiconductors, 52:12 (2018), 1621–1629 4
2017
8. Z. N. Sokolova, D. A. Veselov, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan, “Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  998–1003  mathnet  elib; Semiconductors, 51:7 (2017), 959–964 16
9. Yu. S. Polubavkina, F. I. Zubov, È. I. Moiseev, N. V. Kryzhanovskaya, M. V. Maksimov, E. S. Semenova, K. Yvind, L. V. Asryan, A. E. Zhukov, “Specific features of waveguide recombination in laser structures with asymmetric barrier layers”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  263–268  mathnet  elib; Semiconductors, 51:2 (2017), 254–259 2
2016
10. L. V. Asryan, F. I. Zubov, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1380–1386  mathnet  elib; Semiconductors, 50:10 (2016), 1362–1368 12
11. Z. N. Sokolova, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan, “Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  679–682  mathnet  elib; Semiconductors, 50:5 (2016), 667–670 5
12. Z. N. Sokolova, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan, “Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure”, Kvantovaya Elektronika, 46:9 (2016),  777–781  mathnet  elib [Quantum Electron., 46:9 (2016), 777–781  isi  scopus] 6
2015
13. Z. N. Sokolova, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan, “Comparative analysis of the effects of electron and hole capture on the power characteristics of a semiconductor quantum-well laser”, Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1553–1557  mathnet  elib; Semiconductors, 49:11 (2015), 1506–1510 1
14. A. E. Zhukov, L. V. Asryan, E. S. Semenova, F. I. Zubov, N. V. Kryzhanovskaya, M. V. Maksimov, “On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  956–960  mathnet  elib; Semiconductors, 49:7 (2015), 935–938 7
15. F. I. Zubov, A. E. Zhukov, Yu. M. Shernyakov, M. V. Maksimov, N. V. Kryzhanovskaya, K. Yvind, E. S. Semenova, L. V. Asryan, “The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015),  61–70  mathnet  elib; Tech. Phys. Lett., 41:5 (2015), 439–442 6
2014
16. Z. N. Sokolova, I. S. Tarasov, L. V. Asryan, “Calculation of output characteristics of semiconductor quantum-well lasers with account for both electrons and holes”, Kvantovaya Elektronika, 44:9 (2014),  801–805  mathnet  elib [Quantum Electron., 44:9 (2014), 801–805  isi  scopus] 3
2013
17. Z. N. Sokolova, I. S. Tarasov, L. V. Asryan, “Threshold characteristics of semiconductor lasers under conditions of violation of electroneutrality in quantum wells”, Kvantovaya Elektronika, 43:5 (2013),  428–432  mathnet  elib [Quantum Electron., 43:5 (2013), 428–432  isi  scopus] 2
2012
18. V. G. Talalaev, A. A. Tonkikh, N. D. Zakharov, A. V. Senichev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Bouravlev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Sotnikov, G. È. Cirlin, “Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix”, Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1492–1503  mathnet  elib; Semiconductors, 46:11 (2012), 1460–1470 9
19. Z. N. Sokolova, I. S. Tarasov, L. V. Asryan, “Effect of the number of quantum wells in the active region on the linearity of the light-current characteristic of a semiconductor laser”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1067–1073  mathnet  elib; Semiconductors, 46:8 (2012), 1044–1050 7
20. A. E. Zhukov, L. V. Asryan, Yu. M. Shernyakov, M. V. Maksimov, F. I. Zubov, N. V. Kryzhanovskaya, K. Yvind, E. S. Semenova, “Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1049–1053  mathnet  elib; Semiconductors, 46:8 (2012), 2017–1031 6
2011
21. Z. N. Sokolova, I. S. Tarasov, L. V. Asryan, “Capture of charge carriers and output power of a quantum well laser”, Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1553–1559  mathnet  elib; Semiconductors, 45:11 (2011), 1494–1500 18
22. A. E. Zhukov, N. V. Kryzhanovskaya, M. V. Maksimov, A. Yu. Egorov, M. M. Pavlov, F. I. Zubov, L. V. Asryan, “Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability”, Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  540–546  mathnet  elib; Semiconductors, 45:4 (2011), 530–535 11
2005
23. L. V. Asryan, “Spontaneous radiative recombination and nonradiative Auger recombination in quantum-confined heterostructures”, Kvantovaya Elektronika, 35:12 (2005),  1117–1120  mathnet [Quantum Electron., 35:12 (2005), 1117–1120  isi] 38

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