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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, T. A. Bagaev, A. Yu. Andreev, K. Yu. Telegin, A. V. Lobintsov, E. I. Davydova, S. M. Sapozhnikov, A. I. Danilov, A. V. Podkopaev, E. B. Ivanova, V. A. Simakov, “Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70”, Kvantovaya Elektronika, 47:4 (2017), 291–293 [Quantum Electron., 47:4 (2017), 291–293 ] |
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2011 |
| 2. |
E. I. Davydova, V. V. Dmitriev, Yu. Yu. Kozlov, I. A. Kukushkin, M. B. Uspenskiy, V. A. Shishkin, “Increase in the optical damage threshold of a ZnSe-passivated front mirror of a laser diode”, Kvantovaya Elektronika, 41:5 (2011), 423–426 [Quantum Electron., 41:5 (2011), 423–426 ] |
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2010 |
| 3. |
E. I. Davydova, V. P. Konyaev, M. A. Ladugin, E. I. Lebedeva, A. A. Marmalyuk, A. A. Padalitsa, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, I. V. Yarotskaya, “Dual-wavelength laser diodes based on epitaxially stacked heterostructures”, Kvantovaya Elektronika, 40:8 (2010), 697–699 [Quantum Electron., 40:8 (2010), 697–699 ] |
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| 4. |
E. I. Davydova, V. P. Konyaev, M. A. Ladugin, E. I. Lebedeva, A. A. Marmalyuk, A. A. Padalitsa, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, I. V. Yarotskaya, “808-nm laser diode bars based on epitaxially stacked double heterostructures”, Kvantovaya Elektronika, 40:8 (2010), 682–684 [Quantum Electron., 40:8 (2010), 682–684 ] |
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2009 |
| 5. |
E. I. Davydova, M. V. Zverkov, V. P. Konyaev, V. V. Krichevskii, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, V. A. Simakov, A. V. Sukharev, M. B. Uspenskiy, “High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm”, Kvantovaya Elektronika, 39:8 (2009), 723–726 [Quantum Electron., 39:8 (2009), 723–726 ] |
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| 6. |
E. I. Davydova, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, A. V. Petrovskii, A. V. Sukharev, M. B. Uspenskiy, V. A. Shishkin, “High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures”, Kvantovaya Elektronika, 39:1 (2009), 18–20 [Quantum Electron., 39:1 (2009), 18–20 ] |
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2004 |
| 7. |
E. I. Davydova, A. V. Zubanov, A. A. Marmalyuk, M. B. Uspenskiy, V. A. Shishkin, “Single-mode ridge lasers fabricated in an inductively coupled plasma source”, Kvantovaya Elektronika, 34:9 (2004), 805–808 [Quantum Electron., 34:9 (2004), 805–808 ] |
1
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2002 |
| 8. |
V. V. Popovichev, E. I. Davydova, A. A. Marmalyuk, A. V. Simakov, M. B. Uspenskiy, A. A. Chel'nyi, A. P. Bogatov, A. E. Drakin, S. A. Plisyuk, A. A. Stratonnikov, “High-power single-transverse-mode ridge optical waveguide semiconductor lasers”, Kvantovaya Elektronika, 32:12 (2002), 1099–1104 [Quantum Electron., 32:12 (2002), 1099–1104 ] |
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2001 |
| 9. |
A. Yu. Abazadze, V. V. Bezotosnyi, T. G. Gur'eva, E. I. Davydova, I. D. Zalevskii, G. M. Zverev, A. V. Lobintsov, A. A. Marmalyuk, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, V. A. Shishkin, “150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics”, Kvantovaya Elektronika, 31:8 (2001), 659–660 [Quantum Electron., 31:8 (2001), 659–660 ] |
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1999 |
| 10. |
V. V. Bezotosnyi, E. I. Davydova, I. D. Zalevskii, V. P. Konyaev, A. A. Marmalyuk, A. A. Padalitsa, V. A. Shishkin, “Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the <i>p</i> — <i>n</i> junction”, Kvantovaya Elektronika, 27:1 (1999), 1–2 [Quantum Electron., 29:4 (1999), 283–284 ] |
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1992 |
| 11. |
E. I. Davydova, A. E. Drakin, P. G. Eliseev, G. T. Pak, V. V. Popovichev, M. B. Uspenskiy, S. E. Khlopotin, V. A. Shishkin, “Directional pattern and other output properties of a quantum-well injection laser for the 780-nm spectral region”, Kvantovaya Elektronika, 19:10 (1992), 1024–1031 [Sov J Quantum Electron, 22:10 (1992), 954–960 ] |
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1989 |
| 12. |
A. P. Bogatov, N. A. Vagner, E. I. Davydova, P. G. Eliseev, O. A. Kobildzhanov, O. M. Nikitina, G. T. Pak, “Injection laser with a waveguide lens”, Kvantovaya Elektronika, 16:11 (1989), 2173–2176 [Sov J Quantum Electron, 19:11 (1989), 1397–1399 ] |
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