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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
T. V. Kotereva, V. A. Gavva, V. A. Lipsky, A. V. Nezhdanov, Yu. S. Belozerov, A. D. Bulanov, V. G. Plotnichenko, “Refractive index dispersion and Raman scattering spectra of a germanium single crystal enriched with $^{70}$Ge isotope”, Optics and Spectroscopy, 133:7 (2025), 734–740   |
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2024 |
| 2. |
T. V. Kotereva, V. A. Gavva, V. A. Lipsky, A. V. Nezhdanov, V. G. Plotnichenko, A. D. Bulanov, “Effect of atomic mass and isotopic disorder on the phonon spectra of isotope-enriched germanium crystals”, Fizika Tverdogo Tela, 66:8 (2024), 1425–1430 |
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2023 |
| 3. |
A. M. Gibin, N. V. Abrosimov, A. D. Bulanov, V. A. Gavva, “Thermal conductivity of single-crystals isotopically enriched $^{70}$Ge, $^{72}$Ge, $^{74}$Ge in the temperature range of 80–310 K”, Fizika Tverdogo Tela, 65:8 (2023), 1448–1452 |
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2018 |
| 4. |
E. A. Ekimov, V. S. Krivobok, S. G. Lyapin, P. S. Sherin, V. A. Gavva, M. V. Kondrin, “Isotopic effects in impurity-vacancy complexes in diamond”, Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018), 52–54  |
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2016 |
| 5. |
A. P. Detochenko, S. A. Denisov, M. N. Drozdov, A. I. Mashin, V. A. Gavva, A. D. Bulanov, A. V. Nezhdanov, A. A. Ezhevskii, M. V. Stepikhova, V. Yu. Chalkov, V. N. Trushin, D. V. Shengurov, V. G. Shengurov, N. V. Abrosimov, H. Riemann, “Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 350–353 ; Semiconductors, 50:3 (2016), 345–348 |
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2015 |
| 6. |
A. V. Gusev, A. M. Gibin, I. A. Andryushchenko, V. A. Gavva, E. A. Kozyrev, “Heat capacity of high-purity isotope-enriched germanium-76 in the temperature range of 2–15 K”, Fizika Tverdogo Tela, 57:9 (2015), 1868–1870 ; Phys. Solid State, 57:9 (2015), 1917–1919 |
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| 7. |
E. A. Ekimov, S. G. Lyapin, K. N. Boldyrev, M. V. Kondrin, R. Khmelnitskiy, V. A. Gavva, T. V. Kotereva, M. N. Popova, “Germanium–vacancy color center in isotopically enriched diamonds synthesized at high pressures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:11 (2015), 811–816 ; JETP Letters, 102:11 (2015), 701–706  |
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2013 |
| 8. |
A. V. Inyushkin, A. N. Taldenkov, A. V. Gusev, A. M. Gibin, V. A. Gavva, E. A. Kozyrev, “Thermal conductivity of the single-crystal monoisotopic $^{29}$Si in the temperature range 2.4–410 K”, Fizika Tverdogo Tela, 55:1 (2013), 202–206 ; Phys. Solid State, 55:1 (2013), 235–239 |
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| 9. |
A. A. Ezhevskii, S. A. Popkov, A. V. Soukhorukov, D. V. Guseinov, V. A. Gavva, A. V. Gusev, N. V. Abrosimov, H. Riemann, “Monoisotopic silicon $^{28}$Si in spin resonance spectroscopy of electrons localized at donors”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 168–173 ; Semiconductors, 47:2 (2013), 203–208 |
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2010 |
| 10. |
V. G. Plotnichenko, V. O. Nazaryants, E. B. Kryukova, V. V. Koltashev, V. O. Sokolov, A. V. Gusev, V. A. Gavva, M. F. Churbanov, E. M. Dianov, “Near- to mid-IR refractive index of <sup>28</sup>Si, <sup>29</sup>Si and <sup>30</sup>Si monoisotopic single crystals”, Kvantovaya Elektronika, 40:9 (2010), 753–755 [Quantum Electron., 40:9 (2010), 753–755 ] |
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