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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
V. P. Ulin, G. V. Li, A. V. Nashchekin, V. L. Berkovits, “Gold on surface of А$^{\mathrm{III}}$В$^{\mathrm{V}}$ crystals: effects of catalytic dissociation dissociation and anisotropic imbedding”, Fizika i Tekhnika Poluprovodnikov, 59:7 (2025), 414–422  |
| 2. |
V. L. Berkovits, V. A. Kosobukin, V. P. Ulin, A. V. Nashchekin, S. A. Khakhulin, “Chemical preparation of gold nanoclusters on GaP (001) surface and spectroscopy of their localized plasmons”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025), 14–17  |
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2023 |
| 3. |
G. G. Zegrya, V. P. Ulin, A. G. Zegrya, V. M. Freiman, N. V. Ulin, D. V. Fadeev, G. G. Savenkov, “Limiting thickness of pore walls formed in processes of anode etching of heavily doped semiconductors”, Zhurnal Tekhnicheskoi Fiziki, 93:2 (2023), 281–285 |
| 4. |
V. L. Berkovits, V. A. Kosobukin, V. P. Ulin, P. A. Alekseev, F. Yu. Soldatenkov, A. V. Nashchekin, S. A. Khakhulin, O. S. Komkov, “Finding the wedge-shaped Au nanoclusters at the surface of GaAs and investigating them with the polarization spectroscopy of plasmons”, Fizika i Tekhnika Poluprovodnikov, 57:6 (2023), 484–490 |
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2022 |
| 5. |
V. L. Berkovits, V. A. Kosobukin, V. P. Ulin, P. A. Alekseev, F. Yu. Soldatenkov, V. A. Levitskii, “Effect of chemical passivation of GaAs(001) surface on anisotropy and orientation of gold nanoclusters formed on it and their plasmons”, Fizika i Tekhnika Poluprovodnikov, 56:7 (2022), 613–617 |
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2021 |
| 6. |
D. A. Lozhkina, E. V. Astrova, A. I. Lihachev, A. V. Parfeneva, A. M. Rumyantsev, A. N. Smirnov, V. P. Ulin, “Silicon monoxide carbonized by fluorocarbon as a composite material for anodes of lithium-ion batteries”, Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021), 1381–1392 ; Tech. Phys., 66:11 (2021), 1228–1240  |
5
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| 7. |
G. G. Zegrya, V. P. Ulin, A. G. Zegrya, N. V. Ulin, V. M. Fraiman, Yu. M. Mikhailov, “Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions”, Tech. Phys., 66:2 (2021), 367 |
| 8. |
D. A. Lozhkina, E. V. Astrova, R. V. Sokolov, D. A. Kirilenko, A. A. Levin, A. V. Parfeneva, V. P. Ulin, “Formation of silicon nanoclusters upon disproportionation of silicon monoxide”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 373–387 ; Semiconductors, 55:4 (2021), 423–437 |
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2020 |
| 9. |
E. V. Astrova, V. P. Ulin, A. V. Parfeneva, A. V. Nashchekin, V. N. Nevedomskiy, M. V. Baidakova, “Interaction of fluorocarbon with silicon monoxide and processes of SiC nanowire formation”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 753–765 ; Semiconductors, 54:8 (2020), 900–911 |
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| 10. |
E. V. Astrova, A. V. Parfeneva, A. M. Rumyantsev, V. P. Ulin, M. V. Baidakova, V. N. Nevedomskiy, A. V. Nashchekin, “The effect of thermal treatment on properties of composite silicon–carbon anodes for lithium-ion batteries”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020), 14–18 ; Tech. Phys. Lett., 46:2 (2020), 114–117 |
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2019 |
| 11. |
G. G. Zegrya, V. P. Ulin, A. G. Zegrya, N. V. Ulin, V. M. Freiman, Yu. M. Mikhailov, “Effect of conductivity type and doping level of silicon crystals on the size of formed pore channels during anodic etching in hydrofluoric acid solutions”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1575–1584 ; Tech. Phys., 64:10 (2019), 1492–1500 |
6
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| 12. |
M. V. Baidakova, N. A. Germanov, S. N. Golyandin, M. E. Kompan, S. V. Mochalov, A. V. Nashchekin, V. N. Nevedomskiy, S. A. Pul'nev, M. K. Rabchinskii, V. P. Ulin, N. V. Ulin, “Weakly ordered nanostructured silver disilicate and its colloidal solutions: preparation and properties”, Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 938–947 ; Tech. Phys., 64:6 (2019), 884–892 |
2
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| 13. |
E. V. Astrova, V. P. Ulin, A. V. Parfeneva, V. B. Voronkov, “Fluorocarbon carbonization of nanocrystalline silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019), 29–32 ; Tech. Phys. Lett., 45:7 (2019), 664–667 |
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2017 |
| 14. |
S. A. Masalov, E. O. Popov, A. G. Kolosko, S. V. Filippov, V. P. Ulin, V. P. Evtikhiev, A. V. Atrashchenko, “Liquid-metal field electron source based on porous GaP”, Zhurnal Tekhnicheskoi Fiziki, 87:9 (2017), 1416–1422 ; Tech. Phys., 62:9 (2017), 1424–1430 |
2
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| 15. |
G. G. Zegrya, G. G. Savenkov, V. A. Morozov, A. G. Zegrya, N. V. Ulin, V. P. Ulin, A. A. Lukin, V. A. Bragin, I. A. Oskin, Yu. M. Mikhailov, “Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 501–506 ; Semiconductors, 51:4 (2017), 477–482 |
6
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| 16. |
V. P. Ulin, N. V. Ulin, F. Yu. Soldatenkov, “Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 481–496 ; Semiconductors, 51:4 (2017), 458–472 |
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2016 |
| 17. |
S. A. Masalov, A. V. Atrashchenko, V. P. Ulin, E. O. Popov, A. G. Kolosko, S. V. Filippov, “A study of the electrical properties of the porous GaP (111) surface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016), 39–48 ; Tech. Phys. Lett., 42:11 (2016), 1118–1121 |
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2015 |
| 18. |
A. G. Banshchikov, I. V. Golosovskii, A. V. Krupin, K. V. Koshmak, N. S. Sokolov, Yu. P. Chernenkov, M. A. Yagovkina, V. P. Ulin, M. Tabuchi, “Epitaxial layers of nickel fluoride on Si(111): Growth and stabilization of the orthorhombic phase”, Fizika Tverdogo Tela, 57:8 (2015), 1610–1615 ; Phys. Solid State, 57:8 (2015), 1647–1652 |
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2014 |
| 19. |
N. M. Lebedeva, A. A. Usikova, V. V. Evstropov, M. V. Lebedev, V. P. Ulin, V. M. Lantratov, V. M. Andreev, “Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments”, Zhurnal Tekhnicheskoi Fiziki, 84:6 (2014), 92–97 ; Tech. Phys., 59:6 (2014), 879–883 |
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| 20. |
O. I. Ksenofontova, A. V. Vasin, V. V. Egorov, A. V. Bobyl', F. Yu. Soldatenkov, E. I. Terukov, V. P. Ulin, N. V. Ulin, O. I. Kiselev, “Porous silicon and its applications in biology and medicine”, Zhurnal Tekhnicheskoi Fiziki, 84:1 (2014), 67–78 ; Tech. Phys., 59:1 (2014), 66–77 |
51
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| 21. |
V. P. Ulin, N. V. Ulin, F. Yu. Soldatenkov, A. V. Semenov, A. V. Bobyl', “Surface of porous silicon under hydrophilization and hydrolytic degradation”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1243–1248 ; Semiconductors, 48:9 (2014), 1211–1216 |
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2013 |
| 22. |
A. N. Aleshin, A. D. Sokolovskaya, I. P. Shcherbakov, P. N. Brunkov, V. P. Ulin, “Organic light-emitting diodes based on polyvinylcarbazole films doped with polymer nanoparticles”, Fizika Tverdogo Tela, 55:3 (2013), 617–621 ; Phys. Solid State, 55:3 (2013), 675–680 |
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| 23. |
V. L. Berkovits, V. A. Kosobukin, V. P. Ulin, A. B. Gordeeva, V. N. Petrov, “Reflectance anisotropy spectroscopy of metal nanoclusters formed on semiconductor surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 98:10 (2013), 687–692 ; JETP Letters, 98:10 (2013), 614–618  |
8
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2012 |
| 24. |
V. L. Berkovits, A. B. Gordeeva, T. V. L'vova, V. P. Ulin, “Electron auger spectroscopy and reflectance anisotropy spectroscopy of monolayer nitride films on (001) surfaces of GaAs and GaSb crystals”, Fizika i Tekhnika Poluprovodnikov, 46:11 (2012), 1463–1467 ; Semiconductors, 46:11 (2012), 1432–1436 |
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2011 |
| 25. |
V. L. Berkovits, T. V. L'vova, V. P. Ulin, “Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures”, Fizika i Tekhnika Poluprovodnikov, 45:12 (2011), 1637–1641 ; Semiconductors, 45:12 (2011), 1575–1579 |
11
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| 26. |
Yu. B. Samsonenko, G. È. Cirlin, A. I. Khrebtov, A. D. Bouravlev, N. K. Polyakov, V. P. Ulin, V. G. Dubrovskii, P. Werner, “Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces”, Fizika i Tekhnika Poluprovodnikov, 45:4 (2011), 441–445 ; Semiconductors, 45:4 (2011), 431–435 |
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1991 |
| 27. |
D. A. Vinokurov, V. M. Lantratov, M. A. Sinicin, V. P. Ulin, N. N. Faleev, O. M. Fedorova, Ya. L. Shaiovich, B. S. Yavich, “Свойства и особенности кристаллизации эпитаксиальных слоев GaAs,
выращенных на подложках Si(100) методом двухстадийного осаждения в МОС
гидридном процессе”, Fizika i Tekhnika Poluprovodnikov, 25:6 (1991), 1022–1029 |
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1989 |
| 28. |
M. M. Sobolev, P. N. Brunkov, S. G. Konnikov, M. N. Stepanova, V. G. Nikitin, V. P. Ulin, A. Sh. Dolbaya, T. D. Kamushadze, R. M. Maisuradze, “Механизм компенсации в многослойных структурах на основе
нелегированного GaAs, выращенных из раствора-расплава в Ga”, Fizika i Tekhnika Poluprovodnikov, 23:6 (1989), 1058–1065 |
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1987 |
| 29. |
K. Yu. Kizhaev, S. G. Konnikov, S. A. Nikishin, K. Yu. Pogrebickii, V. P. Ulin, N. N. Faleev, L. I. Flaks, “Widening transition layers in heterostructures, based on $In\,Ga\,As\,P$ solid-solutions, caused by elastic tensions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987), 132–136 |
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1986 |
| 30. |
Zh. I. Alferov, B. Ya. Ber, D. Z. Garbuzov, K. Yu. Kizhaev, V. V. Krasovskii, S. A. Nikishin, D. V. Sinyavskii, V. P. Ulin, “Formation of transition layers in heterostructures based on $Ga\,As-Al\,As$ solid-solutions during the liquid-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:6 (1986), 335–341 |
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1984 |
| 31. |
R. S. Vartanyan, A. G. Mashevskii, M. A. Sinicin, V. P. Ulin, B. S. Yavich, A. A. Yakovenko, “Электрофизические характеристики метастабильных твердых растворов
(Ge$_{2}$)$_{x}$(GaAs)$_{1-x}$ и влияние на них термообработки”, Fizika i Tekhnika Poluprovodnikov, 18:8 (1984), 1438–1445 |
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