1. Vliyanie sostava smesi na elektrofizicheskie parametry i spektry izlucheniya plazmy $HCl–O_2$ i $HCl–Ar$ // TVT. 2011. T. 49. # 4. S. 509–512.
2. Elektrofizicheskie parametry i emissionnye spektry plazmy tleyuschego razryada v khloristom vodorode // Izv. VUZov. Khimiya i khim. tekhnologiya. 2011. T. 54. Vyp. 9. S. 48 – 52.
3. Electrophysical Parameters and Concentrations of Active Particles
in the Plasma of $HCl$ Mixtures with Inert and Molecular Gases // Russian Microelectronics. 2014. Vol. 43. No. 5. pp. 352–357.
4. Vliyanie temperatury na skorost travleniya i kachestvo poverkhnosti GaAs pri obrabotke v plazme $HCl-Ar$, $HCl-Cl_2$, $HCl-H_2$ // Izv. VUZov. Khimiya i khim. tekhnologiya. 2014. T. 57. #. 7. S. 50-55.
5. Vzaimodeistvie plazmy smesei khlorovodorod - argon, - khlor, - vodorod s arsenidom galliya // Izv. VUZov. Khimiya i khim. tekhnologiya. 2014, T. 57, #. 8. Str. 44-47.
6. Parametry plazmy i kinetika travleniya $GaAs$ v smesyakh $HCl+Ar$, $H_2$, i $Cl_2$ peremennogo nachalnogo sostava // Fizika i khimiya obrabotki materialov, 2015. # 6. S. 52–61.
7. Issledovanie poverkhnosti $Ga As$ posle travleniya v plazme vysokochastotnogo i tleyuschego razryadov metodom atomno-silovoi mikroskopii // Fizika i tekhnika poluprovodnikov, 2016. T. 50 # 2. S. 167–170.
8. Kinetika vzaimodeistviya vysokochastotnogo razryada $C Cl_2 F_2$ s arsenidom galliya // Mikroelektronika, 2016. T. 45. # 5. S. 374–378.)
A. V. Dunaev, D. B. Murin, S. A. Pivovarenok, “Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 167–170; Semiconductors, 50:2 (2016), 167–170
S. A. Pivovarenok, A. V. Dunaev, D. B. Murin, A. M. Efremov, V. I. Svettsov, “Effect of Mixture Composition on the Electrophysical Parameters and Emission Spectra of $\mathrm{HCl}$–$\mathrm{O}_2$ and $\mathrm{HCl}$–$\mathrm{Ar}$ Plasma”, TVT, 49:4 (2011), 509–512; High Temperature, 49:4 (2011), 491–494
