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Publications in Math-Net.Ru |
Citations |
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2013 |
| 1. |
L. A. Kosyachenko, N. S. Yurtsenyuk, I. M. Rarenko, V. M. Skljarchuk, O. F. Sklyarchuk, Z. I. Zakharuk, E. V. Grushko, “Charge transport mechanisms in Schottky diodes based on low-resistance CdTe:Mn”, Fizika i Tekhnika Poluprovodnikov, 47:7 (2013), 907–915   ; Semiconductors, 47:7 (2013), 916–924 |
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2012 |
| 2. |
L. A. Kosyachenko, V. M. Skljarchuk, S. V. Mel'nichuk, O. L. Maslyanchuk, E. V. Grushko, O. V. Sklyarchuk, “Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and $\gamma$-ray detectors”, Fizika i Tekhnika Poluprovodnikov, 46:3 (2012), 389–395 ; Semiconductors, 46:3 (2012), 374–381 |
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2010 |
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R. A. Khairulin, S. V. Stankus, R. N. Abdullaev, V. M. Skljarchuk, “The density and interdiffusion coefficients of bismuth-tin melts of eutectic and near-eutectic composition”, TVT, 48:2 (2010), 206–209 ; High Temperature, 48:2 (2010), 188–191   |
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1985 |
| 4. |
L. A. Kosyachenko, E. F. Kukhto, V. M. Skljarchuk, “Hot luminescence of a silicon bipolar-transistor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:23 (1985), 1437–1440 |
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1984 |
| 5. |
L. A. Kosyachenko, E. F. Kukhto, V. M. Skljarchuk, “RADIATION OF LIGHT BY METAL DURING DIRECT DISPLACEMENT OF A SCHOTTKY
DIODE”, Zhurnal Tekhnicheskoi Fiziki, 54:6 (1984), 1185–1186 |
| 6. |
L. A. Kosyachenko, E. F. Kukhto, V. M. Skljarchuk, “Mechanism of Electroluminescence of Back-Biased Silicon $p{-}n$ Junction”, Fizika i Tekhnika Poluprovodnikov, 18:3 (1984), 426–430 |
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