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Publications in Math-Net.Ru |
Citations |
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2016 |
| 1. |
S. S. Arutyunyan, A. Yu. Pavlov, V. Yu. Pavlov, K. N. Tomosh, Yu. V. Fedorov, “On a two-layer Si$_{3}$N$_{4}$/SiO$_{2}$ dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1138–1142   ; Semiconductors, 50:8 (2016), 1117–1121 |
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2014 |
| 2. |
D. V. Lavrukhin, A. E. Yachmenev, R. R. Galiev, R. A. Khabibullin, D. S. Ponomarev, Yu. V. Fedorov, P. P. Maltsev, “MHEMT with a power-gain cut-off frequency of $f_{\mathrm{max}}$ = 0.63 THz on the basis of a In$_{0.42}$Al$_{0.58}$As/In$_{0.42}$Ga$_{0.58}$As/In$_{0.42}$Al$_{0.58}$As/GaAs nanoheterostructure”, Fizika i Tekhnika Poluprovodnikov, 48:1 (2014), 73–76 ; Semiconductors, 48:1 (2014), 69–72 |
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1995 |
| 3. |
Yu. V. Fedorov, “Optimal configuration of optical systems with spatial light modulators”, Kvantovaya Elektronika, 22:10 (1995), 1065–1066 [Quantum Electron., 25:10 (1995), 1030–1031  ] |
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