|
|
|
Публикации в базе данных Math-Net.Ru |
Цитирования |
|
2021 |
| 1. |
Sanjay, B. Prasad, A. Vohra, “Performance evaluation of inversion mode and junctionless dual-material double-surrounding gate Si nanotube MOSFET for 5-nm gate length”, Физика и техника полупроводников, 55:4 (2021), 355  ; Semiconductors, 55:12 (2021), 936–942 |
2
|
| 2. |
B. Singh, B. Prasad, D. Kumar, “Silicon nanowire parameter extraction using DFT and comparative performance analysis of SiNWFET and CNTFET devices”, Физика и техника полупроводников, 55:1 (2021), 83 ; Semiconductors, 55:1 (2021), 100–107 |
7
|
|
2020 |
| 3. |
Sanjay, B. Prasad, A. Vohra, “Dual material gate engineering to reduce DIBLl in cylindrical gate all around Si nanowire MOSFET for 7-nm gate length”, Физика и техника полупроводников, 54:11 (2020), 1250 ; Semiconductors, 54:11 (2020), 1490–1495 |
15
|
|
