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Публикации в базе данных Math-Net.Ru |
Цитирования |
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2021 |
| 1. |
F. Jabli, S. Dhouibi, M. Gassoumi, “Improvement in electrical and 2DEG properties of Al$_{0.26}$Ga$_{0.74}$N|GaN|Si HEMTs”, Физика и техника полупроводников, 55:3 (2021), 285  ; Semiconductors, 55:3 (2021), 379–383 |
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2020 |
| 2. |
M. Gassoumi, “Conductance deep-level transient spectroscopy and current transport mechanisms in Au|Pt|$n$-GaN Schottky barrier diodes”, Физика твердого тела, 62:4 (2020), 555 ; Phys. Solid State, 62:4 (2020), 636–641 |
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| 3. |
M. Gassoumi, “Characterization of deep levels in lGaN|GaN HEMT by FT-DLTS and current DLTS”, Физика и техника полупроводников, 54:10 (2020), 1099 ; Semiconductors, 54:10 (2020), 1296–1303 |
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2013 |
| 4. |
Malek Gassoumi, Hana Mosbahi, Mohamed Ali Zaidi, Christophe Gaquiere, Hassen Maaref, “Effect of surface passivation by SiN/SiO$_2$ of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method”, Физика и техника полупроводников, 47:7 (2013), 1002–1005  ; Semiconductors, 47:7 (2013), 1008–1012 |
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2012 |
| 5. |
M. Gassoumi, B. Grimbert, C. Gaquiere, H. Maaref, “Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si$_3$N$_4$ by CDLTS”, Физика и техника полупроводников, 46:3 (2012), 396–399 ; Semiconductors, 46:3 (2012), 382–385 |
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