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Публикации в базе данных Math-Net.Ru |
Цитирования |
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2021 |
| 1. |
Y.-C. Lin, J.-S. Niu, W.-C. Liu, J.-H. Tsai, “Thermal stability of HfO$_2$|AlGaN|GaN normally-Off transistors with Ni|Au and Pt gate metals”, Физика и техника полупроводников, 55:7 (2021), 618  ; Semiconductors, 55:7 (2021), 608–616 |
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2020 |
| 2. |
Y.-C. Lin, J.-S. Niu, W.-C. Liu, J.-H. Tsai, “Investigation of Pd|HfO$_2$|AlGaN|GaN enhancement-mode high electron mobility transistor with sensitization, activation, and electroless-plating approaches”, Физика и техника полупроводников, 54:7 (2020), 684 ; Semiconductors, 54:7 (2020), 803–810 |
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2019 |
| 3. |
Jung-Hui Tsai, Pao-Sheng Lin, Yu-Chi Chen, Syuan-Hao Liou, Jing-Shiuan Niu, “Comparative studies of AlGaAs/InGaAs enhancement/depletion-mode high electron mobility transistors with virtual channel layers by hybrid gate recesses approaches”, Физика и техника полупроводников, 53:3 (2019), 430  ; Semiconductors, 53:3 (2019), 406–410 |
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2015 |
| 4. |
Yi-Chen Wu, Jung-Hui Tsai, Te-Kuang Chiang, Fu-Min Wang, “Comparative Investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs Heterojunction Bipolar Transistors”, Физика и техника полупроводников, 49:10 (2015), 1407–1410 ; Semiconductors, 49:10 (2015), 1361–1364 |
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| 5. |
Yi-Chen Wu, Jung-Hui Tsai, Te-Kuang Chiang, Chung-Cheng Chiang, Fu-Min Wang, “Comparative investigation of GaAsSb/InGaAs type-II and InP/InGaAs type-I doped–channel field–effect transistors”, Физика и техника полупроводников, 49:2 (2015), 261–265 ; Semiconductors, 49:2 (2015), 254–258 |
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2014 |
| 6. |
Jung-Hui Tsai, You-Ren Wu, Chung-Cheng Chiang, Fu-Min Wang, Wen-Chau Liu, “Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors”, Физика и техника полупроводников, 48:9 (2014), 1254–1257 ; Semiconductors, 48:9 (2014), 1222–1225 |
| 7. |
Jung-Hui Tsai, Ching-Sung Lee, Chung-Cheng Chiang, Yi-Ting Chao, “Comparative investigation of InP/InGaAs heterostructure-emitter tunneling and superlattice bipolar transistors”, Физика и техника полупроводников, 48:6 (2014), 833–838 ; Semiconductors, 48:6 (2014), 809–814 |
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2013 |
| 8. |
Jung-Hui Tsai, Ching-Sung Lee, Jia-Cing Jhou, You-Ren Wu, Chung-Cheng Chiang, Yi-Ting Chao, Wen-Chau Liu, “Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP pacer at base-collector junction”, Физика и техника полупроводников, 47:10 (2013), 1400–1405 ; Semiconductors, 47:10 (2013), 1391–1396 |
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| 9. |
Chia-Hong Huang, Chung-Cheng Chang, Jung-Hui Tsai, “MOS solar cells with oxides deposited by sol-gel spin-coating techniques”, Физика и техника полупроводников, 47:6 (2013), 825–827 ; Semiconductors, 47:6 (2013), 835–837 |
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2012 |
| 10. |
Jung-Hui Tsai, Chia-Hong Huang, Yung-Chun Ma, You-Ren Wu, “Comparative investigation of InP/InGaAs abrupt, setback, and heterostructure-emitter heterojunction bipolar transistors”, Физика и техника полупроводников, 46:12 (2012), 1619–1624 ; Semiconductors, 46:12 (2012), 1539–1544 |
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| 11. |
Jung-Hui Tsai, Sheng-Shiun Ye, Der-Feng Guo, Wen-Shiung Lour, “Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower $\delta$-doped supplied layers”, Физика и техника полупроводников, 46:4 (2012), 530–534 ; Semiconductors, 46:4 (2012), 514–518 |
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