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Публикации в базе данных Math-Net.Ru |
Цитирования |
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2020 |
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S. Kumar, V. Kumar Mariswamy, A. Kumar, A. Kandasami, A. Nimmala, S. V. S. Nageswara Rao, V. Rajagopal Reddy, K. Sannathammegowda, “Ar ion irradiation effects on the characteristics of Ru|Pt|$n$-GaN Schottky barrier diodes”, Физика и техника полупроводников, 54:12 (2020), 1375  ; Semiconductors, 54:12 (2020), 1641–1649 |
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2017 |
| 2. |
R. Padma, V. Rajagopal Reddy, “Electrical properties and the determination of interface state density from $I$–$V$, $C$–$f$ and $G$–$f$ measurements in Ir/Ru/$n$-InGaN Schottky barrier diode”, Физика и техника полупроводников, 51:12 (2017), 1698–1705  ; Semiconductors, 51:12 (2017), 1641–1649 |
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