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Публикации в базе данных Math-Net.Ru |
Цитирования |
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2019 |
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Jung-Hui Tsai, Pao-Sheng Lin, Yu-Chi Chen, Syuan-Hao Liou, Jing-Shiuan Niu, “Comparative studies of AlGaAs/InGaAs enhancement/depletion-mode high electron mobility transistors with virtual channel layers by hybrid gate recesses approaches”, Физика и техника полупроводников, 53:3 (2019), 430   ; Semiconductors, 53:3 (2019), 406–410 |
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