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Публикации в базе данных Math-Net.Ru |
Цитирования |
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2016 |
| 1. |
R. Swain, K. Jena, T. R. Lenka, “Model development for current–voltage and transconductance characteristics of normally-off AlN/GaN MOSHEMT”, Физика и техника полупроводников, 50:3 (2016), 388–392   ; Semiconductors, 50:3 (2016), 384–389 |
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2015 |
| 2. |
Devashish Pandey, T. R. Lenka, “A model predicting sheet charge density and threshold voltage with dependence on interface states density in LM–InAlN/GaN MOSHEMT”, Физика и техника полупроводников, 49:4 (2015), 524–528 ; Semiconductors, 49:4 (2015), 513–518 |
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