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Публикации в базе данных Math-Net.Ru |
Цитирования |
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2009 |
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N. M. Rubtsov, B. S. Seplyarskii, G. V. Bichurov, V. I. Chernysh, G. I. Tsvetkov, “Gaseous nature of the reaction of Si–N bond formation in self-propagation high-temperature synthesis of silicon nitride by means of an azide method”, Mendeleev Commun., 19:1 (2009), 45–46 |
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