|
|
|
Публикации в базе данных Math-Net.Ru |
Цитирования |
|
2024 |
| 1. |
С. И. Орешкин, М. Н. Петухов, Д. А. Музыченко, В. И. Панов, В. О. Суров, А. В. Самородский, А. И. Орешкин, “Особенности фторирования поверхности золота Au(111) с использованием молекул фторфуллеренов”, Письма в ЖЭТФ, 119:3 (2024), 212–218  ; S. I. Oreshkin, M. N. Petukhov, D. A. Muzychenko, V. I. Panov, V. O. Surov, A. V. Samorodskii, A. I. Oreshkin, “Features of the fluorination of the Au(111) surface by fluorofullerene molecules”, JETP Letters, 119:3 (2024), 211–217 |
3
|
|
2020 |
| 2. |
А. И. Орешкин, Д. А. Музыченко, С. И. Орешкин, В. И. Панов, Р. З. Бахтизин, М. Н. Петухов, “Дефторирование молекул C$_{60}$F$_{48}$, адсорбированных на поверхности Cu(001)”, Письма в ЖЭТФ, 111:6 (2020), 396–402  ; A. I. Oreshkin, D. A. Muzychenko, S. I. Oreshkin, V. I. Panov, R. Z. Bakhtizin, M. N. Petukhov, “Defluorination of C$_{60}$F$_{48}$ molecules adsorbed on the Cu(001) surface”, JETP Letters, 111:6 (2020), 357–362   |
3
|
|
2017 |
| 3. |
Д. А. Музыченко, А. И. Орешкин, С. И. Орешкин, С. С. Уставщиков, А. В. Путилов, А. Ю. Аладышкин, “Особенности роста поверхностных структур, вызванных адсорбцией Ge на поверхности Au(111)”, Письма в ЖЭТФ, 106:4 (2017), 201–207 ; D. A. Muzychenko, A. I. Oreshkin, S. I. Oreshkin, S. S. Ustavschikov, A. V. Putilov, A. Yu. Aladyshkin, “The surface structures growth’s features caused by Ge adsorption on the Au(111) surface”, JETP Letters, 106:4 (2017), 217–222 |
13
|
|
2013 |
| 4. |
S. V. Savinov, A. I. Oreshkin, S. I. Oreshkin, “Ab initio study of surface electronic structure of phosphorus
donor imputiry on Ge(111)-(2$\times$1) surface”, Письма в ЖЭТФ, 97:7 (2013), 458–464 ; JETP Letters, 97:7 (2013), 393–399 |
|
2012 |
| 5. |
S. V. Savinov, A. I. Oreshkin, S. I. Oreshkin, “Ab initio electronic structure of Ge(111)-(2$\times$1) surface in the presence of surface vacancy.
Apllication to STM data analysis”, Письма в ЖЭТФ, 96:1 (2012), 33–36 ; JETP Letters, 96:1 (2012), 31–34 |
3
|
| 6. |
A. I. Oreshkin, R. N. Bakhtizin, V. N. Mantsevich, S. I. Oreshkin, S. V. Savinov, V. I. Panov, “STM/STS study of C$_{60}$F$_{36}$ molecules adsorption on
$7\times 7$–Si(111) surface”, Письма в ЖЭТФ, 95:12 (2012), 748–750 ; JETP Letters, 95:12 (2012), 666–669 |
8
|
|
2011 |
| 7. |
A. I. Oreshkin, N. S. Maslova, V. N. Mantsevich, S. I. Oreshkin, S. V. Savinov, V. I. Panov, D. V. Louzguine-Luzgin, “Metallic glass electronic structure peculiarities revealed by UHV STM/STS”, Письма в ЖЭТФ, 94:1 (2011), 58–62 ; JETP Letters, 94:1 (2011), 58–62 |
14
|
|
2010 |
| 8. |
A. I. Oreshkin, R. Z. Bakhtizin, P. Murugan, V. Kumar, N. Fukui, T. Hashizume, T. Sakurai, “Initial stage of flourofullerene molecules adsorption on Si surface”, Письма в ЖЭТФ, 92:7 (2010), 495–498 ; JETP Letters, 92:7 (2010), 449–452 |
11
|
|
2007 |
| 9. |
A. I. Oreshkin, R. Z. Bakhtizin, J. T. Sadowski, Y. Fujikawa, T. Sakurai, “Formation of highly crystalline $C_{60}$ molecular films on Bi(0001)/Si(111) surface”, Письма в ЖЭТФ, 86:8 (2007), 594–597 ; JETP Letters, 86:8 (2007), 522–525 |
2
|
| 10. |
A. I. Oreshkin, V. N. Mantsevich, N. S. Maslova, D. A. Muzychenko, S. I. Oreshkin, V. I. Panov, S. V. Savinov, P. I. Arseev, “The influence of different impurity atoms on $1/f^\alpha$ tunneling current noise characteristics on InAs(110) surface”, Письма в ЖЭТФ, 85:1 (2007), 46–51 ; JETP Letters, 85:1 (2007), 40–45 |
9
|
|
2006 |
| 11. |
N. S. Maslova, A. I. Oreshkin, S. I. Oreshkin, V. I. Panov, I. V. Radchenko, S. V. Savinov, “Ag-induced atomic structures on the Si(110) surface”, Письма в ЖЭТФ, 84:6 (2006), 381–384 ; JETP Letters, 84:6 (2006), 320–323 |
10
|
|
2003 |
| 12. |
N. S. Maslova, V. I. Panov, K.-H. Wu, Q.-Zh. Xue, T. Nagao, A. I. Oreshkin, “Tunneling conductivity features of the new reconstructed phases on the GaN (0001) surface”, Письма в ЖЭТФ, 78:9 (2003), 1068–1072 ; JETP Letters, 78:9 (2003), 578–582 |
3
|
|
