21 citations to https://www.mathnet.ru/eng/nanho1
  1. Georgii A. Yuklyaevskikh, Boris S. Shvetsov, Andrey V. Emelyanov, Vsevolod A. Kulagin, Vladimir V. Rylkov, Vyacheslav A. Demin, “Plasticity of parylene memristors: Compact phenomenological model and synaptic properties”, Chaos, Solitons & Fractals, 190 (2025), 115784  crossref
  2. Jihee Park, Heeseong Jang, Yongjin Byun, Hyesung Na, Hyeonseung Ji, Sungjun Kim, “Improved memory and synaptic device performance of HfO2-based multilayer memristor by inserting oxygen gradient TiOx layer”, Chaos, Solitons & Fractals, 191 (2025), 115910  crossref
  3. Ming-Ze Meng, Yi-Qun Gao, Yi-Ping Chen, Hao-Hong Li, Xiao-Hui Huang, “Enhancing the performance of polyoxometalate-based memristors in harsh environments based on hydrogen bonding and cooperative π-conjugation interactions”, Inorg. Chem. Front., 2025  crossref
  4. Andrey D. Trofimov, Andrey V. Emelyanov, Anna N. Matsukatova, Alexander A. Nesmelov, Sergey A. Zavyalov, Timofey D. Patsaev, Pavel A. Forsh, Gang Liu, Vladimir V. Rylkov, Vyacheslav A. Demin, “Photosensitive resistive switching in parylene–PbTe nanocomposite memristors for neuromorphic computing”, Nanoscale, 2025  crossref
  5. A. S. Ilin, P. A. Forsh, Yu. V. Balakshin, B. S. Shvetsov, D. V. Gusev, D. M. Rusakov, I. I. Zadiriev, E. V. Kukueva, M. N. Martyshov, A. V. Emelyanov, A. A. Shemukhin, P. K. Kashkarov, “Improvement of TiO2 memristor properties by α-particles irradiation”, Applied Physics Letters, 126:14 (2025)  crossref
  6. Dmitry Zhevnenko, Fedor Meshchaninov, Alexey Belov, Evgeny Gornev, Alexey Mikhaylov, “Modeling memristor switching behavior through phase-delay cluster analysis”, Chaos, Solitons & Fractals, 197 (2025), 116447  crossref
  7. Alexander S. Vokhmintsev, Irina B. Dorosheva, Robert V. Kamalov, Ilya A. Weinstein, “Conduction mechanisms of filamentary resistive switching memristors based on nanoporous and nanotubular titania”, Phys. Chem. Chem. Phys., 2025  crossref
  8. Donghan Shen, Jia Zhou, Ye Chen, Lingjie Kong, Wen Li, Wei Shi, Mingdong Yi, “Unipolar and adaptive organic synaptic devices with resilient plasticity for artificial neuromorphic intelligence”, J. Phys. D: Appl. Phys., 58:24 (2025), 245107  crossref
  9. Rashmi Roy Karmakar, Harsh Ranjan, Vivek Pratap Singh, Somdatta Singh, Saurabh Kumar Pandey, Jyoti Jaiswal, Sanjeev Kumar, “Resistive switching dynamics in MoSe2-ZnO nanoheterostructures for energy-efficient neuromorphic application”, Sensors and Actuators A: Physical, 393 (2025), 116835  crossref
  10. S. N. Nikolaev, A. I. Iliasov, D. V. Ichetkin, A. V. Emelyanov, S. Yu. Shabanov, A. V. Sitnikov, V. A. Demin, A. B. Granovsky, V. V. Rylkov, “Features of the Resistive Switching of Memristors Based on a (CoFeB)x(LiNbO3)100–x Nanocomposite with a Ni Electrode: Influence of Temperature and Magnetic Field”, Nanotechnol Russia, 20:1 (2025), 93  crossref
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