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Chaewon Youn, Sungjun Kim, “Improved synaptic properties of HfSiOx-based ferroelectric memristors by optimizing Ti/N ratio in TiN top electrode for neuromorphic computing”, Sci. China Inf. Sci., 68:10 (2025)
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Sungjoon Kim, Kyungchul Park, Kyungho Hong, Tae‐Hyeon Kim, Jinwoo Park, Sangwook Youn, Hyungjin Kim, Woo Young Choi, “Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlOx Oxidation for Neuromorphic System”, Adv Materials Technologies, 2024
Do Hoon Kim, Woon Hyung Cheong, Hanchan Song, Jae Bum Jeon, Geunyoung Kim, Kyung Min Kim, “Memristive Monte Carlo DropConnect crossbar array enabled by device and algorithm co-design”, Mater. Horiz., 2024
Junwon Jang, Suyong Park, Doohyung Kim, Sungjun Kim, “Synaptic plasticity and associative learning in IGZO-based synaptic transistor”, Sensors and Actuators A: Physical, 376 (2024), 115641
Gisya Abdi, Tomasz Mazur, Ewelina Kowalewska, Andrzej Sławek, Mateusz Marzec, Konrad Szaciłowski, “Memristive properties and synaptic plasticity in substituted pyridinium iodobismuthates”, Dalton Trans., 53:35 (2024), 14610
Muhammad Ismail, Maria Rasheed, Yongjin Park, Sohyeon Lee, Chandreswar Mahata, Wonbo Shim, Sungjun Kim, “Enhanced analog switching and neuromorphic performance of ZnO-based memristors with indium tin oxide electrodes for high-accuracy pattern recognition”, The Journal of Chemical Physics, 161:13 (2024)
Margarita A. Ryabova, Anna N. Matsukatova, Andrey V. Emelyanov, Alexander A. Nesmelov, Timofey D. Patsaev, Vyacheslav A. Demin, “Parylene-MoOx crossbar memristors as a volatile reservoir and non-volatile readout: a homogeneous reservoir computing system”, Nanoscale, 2024