Fizika i Tekhnika Poluprovodnikov: Latest issue http://www.mathnet.ru/eng/phts 2026, Volume 60, Issue Issue 2 en-gb Copyright 2026, Tue, 30 Jun 2026 00:00:00 +0300 math-net2026_07@mi-ras.ru tche@mi-ras.ru Fizika i Tekhnika Poluprovodnikov http://www.mathnet.ru/JrnLogos/phts/phts_engl.jpg http://www.mathnet.ru/eng/phts Radiative properties of structures with two-dimensional photonic crystals with an unprocessed central region A. N. Yablonskii, V. E. Zakharov, D. V. Yurasov, M. V. Shaleev, D. V. Shengurov, E. E. Rodyakina, Zh. V. Smagina, A. V. Novikov Fizika i Tekhnika Poluprovodnikov, 2026, 60:2, 65--72 http://mi.mathnet.ru/eng/phts9557 Tue, 30 Jun 2026 00:00:00 +0300 Tue, 30 Jun 2026 00:00:00 +0300 http://mi.mathnet.ru/eng/phts9557 Single- and double-stage growth of GaInP nanostructures on silicon substrates from the vapor phase A. S. Vlasov, L. B. Karlina, R. V. Levin, V. V. Lysak, M. V. Uchaev, I. P. Sotnikov Fizika i Tekhnika Poluprovodnikov, 2026, 60:2, 73--78 http://mi.mathnet.ru/eng/phts9558 Tue, 30 Jun 2026 00:00:00 +0300 Tue, 30 Jun 2026 00:00:00 +0300 http://mi.mathnet.ru/eng/phts9558 First-principles calculation of atomic configurations in the vicinity of the boron atom in $\beta$-Ga$_2$O$_3$ irradiated with B$^+$ ions E. V. Okulich, V. I. Okulich, D. I. Tetelbaum Fizika i Tekhnika Poluprovodnikov, 2026, 60:2, 79--85 http://mi.mathnet.ru/eng/phts9559 Tue, 30 Jun 2026 00:00:00 +0300 Tue, 30 Jun 2026 00:00:00 +0300 http://mi.mathnet.ru/eng/phts9559 Atomic structure and optical properties of GeSi nanostructures obtained by implantation of Ge$^+$ ions into silicon followed by thermal annealing Zh. V. Smagina, V. A. Zinovyev, A. F. Zinov'eva, V. A. Volodin, I. A. Aleksandrov, A. K. Gutakovskii, V. I. Vdovin, A. V. Mudryi, V. D. Zhivulko, V. E. Zakharov, L. I. Fedina Fizika i Tekhnika Poluprovodnikov, 2026, 60:2, 86--91 http://mi.mathnet.ru/eng/phts9560 Tue, 30 Jun 2026 00:00:00 +0300 Tue, 30 Jun 2026 00:00:00 +0300 http://mi.mathnet.ru/eng/phts9560 Control of the formation of a stepped-terrace Surface on 6H-SiC(0001) substrates by in situ reflection electron microscopy D. E. Durakov, A. S. Petrov, D. I. Rogilo, D. V. Shcheglov, A. V. Latyshev Fizika i Tekhnika Poluprovodnikov, 2026, 60:2, 92--97 http://mi.mathnet.ru/eng/phts9561 Tue, 30 Jun 2026 00:00:00 +0300 Tue, 30 Jun 2026 00:00:00 +0300 http://mi.mathnet.ru/eng/phts9561 Formation of indium gallium zinc oxide-based thin-film transistors with a semiconductor channel by printing methods V. V. Ivanov, D. D. Kazarinova, A. A. Lizunova, I. A. Volkov, I. S. Vlasov, E. V. Kolisova, I. A. Tsaplin, D. V. Kornyushin, V. A. Voroshilova, A. A. Loshkarev Fizika i Tekhnika Poluprovodnikov, 2026, 60:2, 98--105 http://mi.mathnet.ru/eng/phts9562 Tue, 30 Jun 2026 00:00:00 +0300 Tue, 30 Jun 2026 00:00:00 +0300 http://mi.mathnet.ru/eng/phts9562 Resonant photoluminescence of InAs/GaAs quantum dots A. P. Gorshkov, V. D. Shvartsman, N. S. Volkova, A. A. Tsvetkov, S. M. Plankina, P. B. Demina, A. S. Panfilov Fizika i Tekhnika Poluprovodnikov, 2026, 60:2, 106--110 http://mi.mathnet.ru/eng/phts9563 Tue, 30 Jun 2026 00:00:00 +0300 Tue, 30 Jun 2026 00:00:00 +0300 http://mi.mathnet.ru/eng/phts9563 Al-rich AlGaN:Si layers and monolayer superlattices (digital alloys) (GaN/AlN):Si grown by plasma-activated molecular beam epitaxy A. N. Semenov, D. V. Nechaev, S. I. Troshkov, P. A. Alekseev, N. M. Shmidt, V. S. Kalinovskii, V. N. Zhmerik Fizika i Tekhnika Poluprovodnikov, 2026, 60:2, 111--120 http://mi.mathnet.ru/eng/phts9564 Tue, 30 Jun 2026 00:00:00 +0300 Tue, 30 Jun 2026 00:00:00 +0300 http://mi.mathnet.ru/eng/phts9564 Switching (turn-on) dynamics of high-current high-voltage current switches based on GaAs/AlGaAs heterothyristors S. O. Slipchenko, I. V. Oreshko, A. A. Podoskin, I. V. Shushkanov, N. A. Pikhtin Fizika i Tekhnika Poluprovodnikov, 2026, 60:2, 121--129 http://mi.mathnet.ru/eng/phts9565 Tue, 30 Jun 2026 00:00:00 +0300 Tue, 30 Jun 2026 00:00:00 +0300 http://mi.mathnet.ru/eng/phts9565