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Письма в Журнал экспериментальной и теоретической физики, 2003, том 77, выпуск 3, страницы 162–166
(Mi jetpl2729)
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Эта публикация цитируется в 18 научных статьях (всего в 18 статьях)
КОНДЕНСИРОВАННЫЕ СРЕДЫ
Unconventional magnetoresistance in long InSb nanowires
S. V. Zaitsev-Zotova, Yu. A. Kumzerovb, Yu. A. Firsovb, P. Monceauc a Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
b Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
c Centre de Recherches sur les Très Basses Températures
Аннотация:
Magnetoresistance in long correlated nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter of around 5 nm, length 0.1–1 mm) is studied over temperature range 2.3–300 K. At zero magnetic field the electric conduction $G$ and the current-voltage characteristics of such wires obey the power laws $G\propto T^\alpha, I\propto V^\beta$, expected for one-dimensional electron systems. The effect of magnetic field corresponds to a 20% growth of the exponents $\alpha$, $\beta$ at $H=10$ T. The observed magnetoresistance is caused by the magnetic-field-induced breaking of the spin-charge separation and represents a novel mechanism of magnetoresistance.
Поступила в редакцию: 25.12.2002
Образец цитирования:
S. V. Zaitsev-Zotov, Yu. A. Kumzerov, Yu. A. Firsov, P. Monceau, “Unconventional magnetoresistance in long InSb nanowires”, Письма в ЖЭТФ, 77:3 (2003), 162–166; JETP Letters, 77:3 (2003), 135–139
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl2729 https://www.mathnet.ru/rus/jetpl/v77/i3/p162
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