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Письма в Журнал экспериментальной и теоретической физики, 2010, том 92, выпуск 1, страницы 43–46
(Mi jetpl763)
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Эта публикация цитируется в 2 научных статьях (всего в 2 статьях)
КОНДЕНСИРОВАННЫЕ СРЕДЫ
Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots
A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii Rzhanov Institute of Semiconductor Physics, Siberian
Branch RAS
Аннотация:
We have calculated the exchange energy, double occupation probability of the lowest singlet state, and degree of entanglement of two holes in vertically coupled double Ge/Si quantum dots. We determined the conditions on which the exchange coupling is large enough for a fast swap operation in quantum computation and the double-occupancy probability is still low, thus maximizing the entanglement for a small computation error. We found that both the degree of entanglement and double-occupancy probability for quantum dots with different dot size collapse onto universal, size independent curves when plotted as a function of singlet-triplet splitting.
Поступила в редакцию: 11.05.2010
Образец цитирования:
A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii, “Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots”, Письма в ЖЭТФ, 92:1 (2010), 43–46; JETP Letters, 92:1 (2010), 36–39
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl763 https://www.mathnet.ru/rus/jetpl/v92/i1/p43
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