Some features of the thermoelectric properties of the “metal-carbon film” junction

Carbon films were obtained by magnetron sputtering of graphite in an argon atmosphere on various metal substrates. As a result, a “metal-semiconductor” junction is formed due to the fact that the temperature dependence of the film resistance is of a semiconductor nature. The current-voltage characteristics of the junction were studied at various ambient temperatures, and the degradation of its electrical properties over time was discovered.