Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 $\mu$m

Band structures of GaN$_{0.58y}$As$_{1-1.58y}$Bi$_y$/GaAs quantum wells (QWs) were studied using the band anticrossing model and the envelope function approximation. The confined states energies and the oscillator strengths of interband transitions were determined for well widths $L_W$ and Bi composition $y$ varying in the range of 4–10 nm and 0–0.07 respectively. The emissions 1.3 and 1.55 $\mu$m were reached for specific couples $(L_W, y)$. The band anticrossing effect on the in-plane carriers effective mass has been investigated at $k$ = 0. The absorbance spectra were calculated for QWs operating at 1.3 and 1.55 $\mu$m.