Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450$^\circ$C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at% Sb shows the lowest resistivity of 0.185 $\Omega$ $\cdot$ cm with a Hall mobility of 54.05 cm$^2$V$^{-1}$s$^{-1}$, and a hole concentration of 6.25 $\times$ 10$^{17}$ cm$^{-3}$.