|
|
Физика и техника полупроводников, 2014, том 48, выпуск 8, страницы 1050–1054
(Mi phts7667)
|
|
|
|
Эта публикация цитируется в 10 научных статьях (всего в 10 статьях)
Спектроскопия, взаимодействие с излучениями
Properties of nanostructured doped ZnO thin films grown by spray pyrolysis technique
N. Sadananda Kumar, Kasturi V. Bangera, G. K. Shivakumar Thin Films Laboratory, Department of Physics, National Institute of Technology Karnataka, Surathkal, 575025 Mangalore, India
Аннотация:
Aluminium doped zinc oxide thin films are deposited on glass substrate by using spray pyrolysis technique. The X-ray diffraction study of the films revealed that the both the undoped and Al doped ZnO thin films exhibits hexagonal wurtzite structure. The preferred orientation is (002) for undoped and up to 3 at% Al doping, further increase in the doping concentration to 5 at% changes the preferred orientation to (101) direction. The surface morphology of the films studied by scanning electron microscope, reveal marked changes on doping. Optical study indicates that both undoped and Al doped films are transparent in the visible region. The band gap of the films increased from 3.24 to 3.36 eV with increasing Al dopant concentration from 0 to 5 at% respectively. The Al doped films showed an increase in the conductivity by three orders of magnitude with increase in doping concentration. The maximum value of conductivity 106.3 S/cm is achieved for 3 at% Al doped films.
Поступила в редакцию: 18.09.2013 Принята в печать: 24.09.2013
Образец цитирования:
N. Sadananda Kumar, Kasturi V. Bangera, G. K. Shivakumar, “Properties of nanostructured doped ZnO thin films grown by spray pyrolysis technique”, Физика и техника полупроводников, 48:8 (2014), 1050–1054; Semiconductors, 48:8 (2014), 1023–1027
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/phts7667 https://www.mathnet.ru/rus/phts/v48/i8/p1050
|
|