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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
K. S. Zhuravlev, A. M. Gilinskii, I. B. Chistokhin, N. A. Valisheva, D. V. Dmitriev, A. I. Toropov, M. S. Aksenov, A. L. Chizh, K. B. Mikitchuk, “High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures”, Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021), 1158–1163   ; Tech. Phys., 66:9 (2021), 1072–1077  |
4
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2019 |
| 2. |
N. N. Novikova, V. A. Yakovlev, S. A. Klimin, T. V. Malin, A. M. Gilinskii, K. S. Zhuravlev, “Surface polaritons in silicon-doped aluminum and gallium nitride films”, Optics and Spectroscopy, 127:1 (2019), 42–45 ; Optics and Spectroscopy, 127:1 (2019), 36–39 |
2
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| 3. |
A. L. Chizh, K. B. Mikitchuk, K. S. Zhuravlev, D. V. Dmitriev, A. I. Toropov, N. A. Valisheva, M. S. Aksenov, A. M. Gilinskii, I. B. Chistokhin, “High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 52–54 ; Tech. Phys. Lett., 45:7 (2019), 739–741 |
12
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2015 |
| 4. |
T. V. Malin, A. M. Gilinskii, V. G. Mansurov, D. Yu. Protasov, A. K. Shestakov, E. B. Yakimov, K. S. Zhuravlev, “MBE-grown AlGaN/GaN heterostructures for UV photodetectors”, Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015), 67–73 ; Tech. Phys., 60:3 (2015), 546–552 |
3
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| 5. |
T. V. Malin, A. M. Gilinskii, V. G. Mansurov, D. Yu. Protasov, A. S. Kozhukhov, E. B. Yakimov, K. S. Zhuravlev, “Increase in the diffusion length of minority carriers in Al$_x$Ga$_{1-x}$N ($x$ = 0–0.1) fabricated by ammonia molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1329–1334 ; Semiconductors, 49:10 (2015), 1285–1289 |
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2003 |
| 6. |
T. S. Shamirzaev, A. M. Gilinskii, A. K. Bakarov, A. I. Toropov, D. A. Tenne, K. S. Zhuravlev, C. von Borczyskowski, D. Zahn, “Millisecond photoluminescence kinetics in a system of direct-bandgap InAs quantum dots in an AlAs matrix”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:7 (2003), 459–463 ; JETP Letters, 77:7 (2003), 389–392 |
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