|
|
|
Publications in Math-Net.Ru |
Citations |
|
2020 |
| 1. |
E. G. Zaytseva, O. Naumova, B. I. Fomin, “Profiling mobility components near the heterointerfaces of thin silicon films”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 124–128   ; Semiconductors, 54:2 (2020), 176–180 |
1
|
|
2017 |
| 2. |
E. G. Zaytseva, O. Naumova, B. I. Fomin, “Electron mobility in the inversion layers of fully depleted SOI films”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 446–452 ; Semiconductors, 51:4 (2017), 423–429 |
3
|
|
2015 |
| 3. |
O. Naumova, E. G. Zaytseva, B. I. Fomin, M. A. Ilnitskii, V. P. Popov, “Density dependence of electron mobility in the accumulation mode for fully depleted SOI films”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1360–1366 ; Semiconductors, 49:10 (2015), 1316–1322 |
9
|
|
| Organisations |
|
|
