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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
N. A. Yarykin, V. B. Shuman, L. M. Portsel', A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. Weber, “DLTS investigation of the energy spectrum of Si : Mg crystals”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 799–804   ; Semiconductors, 53:6 (2019), 789–794 |
2
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| 2. |
V. I. Orlov, N. A. Yarykin, E. B. Yakimov, “Effect of nickel and copper introduced at room temperature on the recombination properties of extended defects in silicon”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 433–436 ; Semiconductors, 53:4 (2019), 411–414 |
3
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2015 |
| 3. |
N. A. Yarykin, J. Weber, “Interstitial carbon formation in irradiated copper-doped silicon”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 728–731 ; Semiconductors, 49:6 (2015), 712–715 |
5
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2013 |
| 4. |
N. A. Yarykin, J. Weber, “Identification of copper-copper and copper-hydrogen complexes in silicon”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 239–243 ; Semiconductors, 47:2 (2013), 275–278 |
13
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| 5. |
O. V. Feklisova, N. A. Yarykin, J. Weber, “Annealing kinetics of boron-containing centers in electron-irradiated silicon”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 192–194 ; Semiconductors, 47:2 (2013), 228–231 |
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1986 |
| 6. |
V. V. Aristov, P. Verner, I. I. Snigireva, I. I. Khodos, E. B. Yakimov, N. A. Yarykin, “Effect of Annealing on Electron-Microscopic Image and DLTS Spectrum of Dislocations in Deformed Silicon”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 907–910 |
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