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Gaidar, G P


https://www.mathnet.ru/eng/person163018
List of publications on Google Scholar

Publications in Math-Net.Ru Citations
2017
1. G. P. Gaidar, P. I. Baransky, “Tensoresistance of $n$-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  975–980  mathnet  elib; Semiconductors, 51:7 (2017), 936–941
2016
2. G. P. Gaidar, P. I. Baransky, “Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  751–756  mathnet  elib; Semiconductors, 50:6 (2016), 735–740 1
2015
3. G. P. Gaidar, “On the tensoresistance of $n$-Ge and $n$-Si crystals with radiation-induced defects”, Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1164–1168  mathnet  elib; Semiconductors, 49:9 (2015), 1129–1133 6
2014
4. G. P. Gaidar, “On the kinetics of electron processes in $^{60}$Co $\gamma$-irradiated $n$-Ge single crystals”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1171–1175  mathnet  elib; Semiconductors, 48:9 (2014), 1141–1144 4
2013
5. P. I. Baransky, G. P. Gaidar, “Method for determination of the degree of compensation for electrically active impurities in multivalley semiconductors”, Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  737–739  mathnet  elib; Semiconductors, 47:6 (2013), 745–748
1986
6. G. P. Gaidar, A. A. Girii, V. N. Ermakov, V. I. Shakhovtsov, “Effect of Thermal Annealing and $\gamma$-Irradiation on Resistivity Variation of $n$-Òóðå Germanium in a Magnetic Field”, Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  2109–2111  mathnet
7. G. P. Gaidar, V. V. Savyak, Yu. V. Simonenko, “Concentration Dependence of the Anisotropy Parameter for Drag Thermal EMF in $n$-Type Germanium”, Fizika i Tekhnika Poluprovodnikov, 20:6 (1986),  1137–1139  mathnet
8. G. P. Gaidar, V. A. Giriy, V. N. Ermakov, V. I. Shakhovtsov, “Determination of $\Theta_{u}$ Deformation-Potential Shift Constant in Transmutationally Doped Silicon Crystals”, Fizika i Tekhnika Poluprovodnikov, 20:6 (1986),  1107–1109  mathnet
9. G. P. Gaidar, N. N. Dmitrenko, L. V. Dubar, P. M. Kurilo, A. A. Pavlenko, Yu. S. Stryuk, V. V. Tokarevskii, “Possibility of Silicon Transmutational Doping by Proton Irradiation”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  960–962  mathnet

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