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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
A. E. Atamuratov, B. O. Jabbarova, M. M. Khalilloev, A. Yusupov, K. Sivasankaran, J. C. Chedjou, “Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET”, Nanosystems: Physics, Chemistry, Mathematics, 13:2 (2022), 148–155   |
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2021 |
| 2. |
A. E. Atamuratov, B. O. Jabbarova, M. M. Khalilloev, A. Yusupov, “The self-heating effect in junctionless fin field-effect transistors based on silicon-on-insulator structures with different channel shapes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:11 (2021), 26–29 ; Tech. Phys. Lett., 47:7 (2021), 542–545 |
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2017 |
| 3. |
A. E. Atamuratov, M. Khalilloev, A. Abdikarimov, Z. A. Atamuratova, M. Kittler, R. Granzner, F. Schwierz, “Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate”, Nanosystems: Physics, Chemistry, Mathematics, 8:1 (2017), 75–78  |
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A. E. Atamuratov, A. Abdikarimov, M. Khalilloev, Z. A. Atamuratova, R. Rahmanov, A. Garcia-Loureiro, A. Yusupov, “Simulation of DIBL effect in 25 nm SOIFinFET with the different body shapes”, Nanosystems: Physics, Chemistry, Mathematics, 8:1 (2017), 71–74 |
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2015 |
| 5. |
A. E. Atamuratov, U. A. Aminov, Z. A. Atamuratova, M. Halillaev, A. Abdikarimov, H. R. Matyakubov, “The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layeror at SiO$_2$ – Si$_3$N$_4$ interfaceat”, Nanosystems: Physics, Chemistry, Mathematics, 6:6 (2015), 837–842 |
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