|
|
|
Publications in Math-Net.Ru |
Citations |
|
2019 |
| 1. |
V. A. Logacheva, A. N. Lukin, N. N. Afonin, O. V. Serbin, “Synthesis and optical properties of cobalt-modified titanium oxide films”, Optics and Spectroscopy, 126:6 (2019), 751–757   ; Optics and Spectroscopy, 126:6 (2019), 674–680 |
4
|
| 2. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. N. Lukin, A. M. Mizerov, E. V. Nikitina, I. N. Arsent'ev, Harald Leiste, Monika Rinke, “Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 70–76 ; Semiconductors, 53:1 (2019), 65–71 |
|
2018 |
| 3. |
P. V. Seredin, A. S. Len'shin, A. V. Fedyukin, D. L. Goloshchapov, A. N. Lukin, I. N. Arsent'ev, A. V. Zhabotinsky, “Effect of conditions of electrochemical etching on the morphological, structural, and optical properties of porous gallium arsenide”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1041–1048 ; Semiconductors, 52:9 (2018), 1163–1170 |
1
|
| 4. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. N. Lukin, Yu. Yu. Khudyakov, I. N. Arsent'ev, A. V. Zhabotinsky, D. N. Nikolaev, N. A. Pikhtin, “Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 881–890 ; Semiconductors, 52:8 (2018), 1012–1021 |
3
|
|
2017 |
| 5. |
V. N. Semenov, A. N. Nituta, A. N. Lukin, N. M. Ovechkina, L. N. Nikitin, “The microstructure of the surface of thin PbS films deposited from the coordination compounds diacetatodi(thiourea)lead”, Nanosystems: Physics, Chemistry, Mathematics, 8:3 (2017), 378–381  |
| 6. |
P. V. Seredin, D. L. Goloshchapov, A. S. Len'shin, A. N. Lukin, Yu. Yu. Khudyakov, I. N. Arsent'ev, T. Prutskij, “Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P on their optical properties”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1160–1167 ; Semiconductors, 51:9 (2017), 1111–1118 |
1
|
|
2016 |
| 7. |
P. V. Seredin, D. L. Goloshchapov, A. S. Len'shin, A. N. Lukin, A. V. Fedyukin, I. N. Arsent'ev, A. D. Bondarev, Ya. V. Lubyanskiy, I. S. Tarasov, “Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1283–1294 ; Semiconductors, 50:9 (2016), 1261–1272 |
|
2015 |
| 8. |
P. V. Seredin, A. S. Len'shin, D. L. Goloshchapov, A. N. Lukin, I. N. Arsent'ev, A. D. Bondarev, I. S. Tarasov, “Investigations of nanodimensional Al$_2$O$_3$ films deposited by ion-plasma sputtering onto porous silicon”, Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 936–941 ; Semiconductors, 49:7 (2015), 915–920 |
24
|
|
2014 |
| 9. |
P. V. Seredin, D. L. Goloshchapov, A. N. Lukin, A. S. Len'shin, A. D. Bondarev, I. N. Arsent'ev, L. S. Vavilova, I. S. Tarasov, “Structure and optical properties of thin Al$_2$O$_3$ films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates”, Fizika i Tekhnika Poluprovodnikov, 48:11 (2014), 1564–1569 ; Semiconductors, 48:11 (2014), 1527–1531 |
9
|
|
| Organisations |
|
|
