|
|
|
Publications in Math-Net.Ru |
Citations |
|
2024 |
| 1. |
A. S. Puzanov, I. Yu. Zabavichev, N. D. Abrosimova, V. V. Bibikova, E. V. Volkova, A. D. Nedoshivina, A. A. Potekhin, E. A. Tarasova, S. V. Khazanova, B. A. Loginov, D. Yu. Blinnikov, V. S. Vtorova, E. A. Lyashko, V. V. Kirillova, V. S. Makeev, A. R. Pervykh, S. V. Obolensky, “Fluctuation analysis of the surface microrelief of silicon-on-insulator structures after radiation exposure”, Fizika i Tekhnika Poluprovodnikov, 58:12 (2024), 668–675   |
|
2023 |
| 2. |
S. V. Khazanova, V. V. Savel'ev, “Transport characteristics calculation of bilayer graphene with different misorientation angle”, Fizika i Tekhnika Poluprovodnikov, 57:5 (2023), 357–361 |
|
2022 |
| 3. |
E. A. Tarasova, S. V. Khazanova, O. L. Golikov, A. S. Puzanov, S. V. Obolenskiy, V. E. Zemlyakov, “Analysis of nonlinear distortions of D$p$HEMT structures based on the GaAs/InGaAs compound with double-sided delta-doping”, Fizika i Tekhnika Poluprovodnikov, 56:9 (2022), 844–847 |
| 4. |
A. I. Bobrov, N. V. Baidus, S. V. Khazanova, A. P. Gorshkov, K. V. Sidorenko, A. N. Shushonov, N. V. Malekhonova, A. V. Nezhdanov, A. V. Zdoroveyshchev, V. N. Trushin, E. V. Ubyivovk, A. I. Okhapkin, D. S. Klement'ev, Z. Sh. Gasainiev, A. V. Kharlamov, “Design of tunnel-coupled quantum wells for a Mach–Zehnder scheme modulator construction”, Fizika i Tekhnika Poluprovodnikov, 56:9 (2022), 833–838 |
|
2021 |
| 5. |
E. A. Tarasova, S. V. Khazanova, O. L. Golikov, A. S. Puzanov, S. V. Obolensky, V. E. Zemlyakov, “Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 872–876 ; Semiconductors, 55:12 (2021), 895–898 |
3
|
| 6. |
E. V. Volkova, A. B. Loginov, B. A. Loginov, E. A. Tarasova, A. S. Puzanov, S. A. Korolev, E. S. Semyonovykh, S. V. Khazanova, S. V. Obolensky, “Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 846–849 ; Semiconductors, 55:12 (2021), 903–906 |
1
|
|
2020 |
| 7. |
E. A. Tarasova, S. V. Obolensky, S. V. Khazanova, N. N. Grigoryeva, O. L. Golikov, A. B. Ivanov, A. S. Puzanov, “Compensation for the nonlinearity of the drain–gate I–V characteristic in field-effect transistors with a gate length of $\sim$100 nm”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 968–973 ; Semiconductors, 54:9 (2020), 1155–1160 |
6
|
|
2017 |
| 8. |
V. E. Degtyarov, S. V. Khazanova, A. A. Konakov, “Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1462–1467 ; Semiconductors, 51:11 (2017), 1409–1414 |
1
|
|
2015 |
| 9. |
N. S. Volkova, A. P. Gorshkov, S. V. Tikhov, N. V. Baidus, S. V. Khazanova, V. E. Degtyarov, D. O. Filatov, “Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 145–148 ; Semiconductors, 49:2 (2015), 139–142 |
| 10. |
S. V. Khazanova, V. E. Degtyarov, N. V. Malekhonova, D. A. Pavlov, N. V. Baidus, “Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 58–62 ; Semiconductors, 49:1 (2015), 55–59 |
1
|
| 11. |
S. V. Khazanova, V. E. Degtyarov, S. V. Tikhov, N. V. Baidus, “Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing $\delta$-doped layers”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 53–57 ; Semiconductors, 49:1 (2015), 50–54 |
5
|
|
2012 |
| 12. |
S. V. Tikhov, N. V. Baidus, A. A. Biryukov, S. V. Khazanova, “Determination of the electron concentration and mobility in the vicinity of a quantum well and $\delta$-doped layer in InGaAs/GaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1532–1536 ; Semiconductors, 46:12 (2012), 1497–1501 |
2
|
| 13. |
S. V. Khazanova, N. V. Baidus, B. N. Zvonkov, D. A. Pavlov, N. V. Malekhonova, V. E. Degtyarov, D. S. Smotrin, I. A. Bobrov, “Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum”, Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1510–1514 ; Semiconductors, 46:12 (2012), 1476–1480 |
4
|
|
| Organisations |
|
|
