|
|
|
Publications in Math-Net.Ru |
Citations |
|
2022 |
| 1. |
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, S. B. Lastovskii, G. A. Oganesyan, D. S. Poloskin, A. A. Aref'ev, “Boron-doped silicon: a possible way of testing and refining models of non-ionizing energy loss under electron- and proton irradiation”, Fizika Tverdogo Tela, 64:12 (2022), 1915  |
|
2021 |
| 2. |
F. F. Komarov, S. B. Lastovsky, I. A. Romanov, I. N. Parkhomenko, L. A. Vlasukova, G. D. Ivlev, Y. Berencen, A. A. Tsivako, N. S. Koval'chuk, E. Wendler, “Te-hyperdoped silicon layers for visible-to-infrared photodiodes”, Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 2026–2037  |
|
2016 |
| 3. |
S. B. Lastovsky, V. P. Markevich, A. S. Yakushevich, L. I. Murin, V. P. Krylov, “Radiation-induced bistable centers with deep levels in silicon $n^{+}$–$p$ structures”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 767–771 ; Semiconductors, 50:6 (2016), 751–755 |
11
|
|
2014 |
| 4. |
L. F. Makarenko, F. P. Korshunov, S. B. Lastovsky, L. I. Murin, M. Moll, I. Pintilie, “Formation and annealing of metastable (interstitial oxygen)-(interstitial carbon) complexes in $n$- and $p$-type silicon”, Fizika i Tekhnika Poluprovodnikov, 48:11 (2014), 1492–1498 ; Semiconductors, 48:11 (2014), 1456–1462 |
5
|
|
2012 |
| 5. |
V. V. Litvinov, A. N. Petukh, Yu. M. Pokotilo, V. P. Markevich, S. B. Lastovsky, “Formation and annealing of radiation defects in tin-doped $p$-type germanium crystals”, Fizika i Tekhnika Poluprovodnikov, 46:5 (2012), 629–632 ; Semiconductors, 46:5 (2012), 611–614 |
2
|
|
| Organisations |
|
|
