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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
G. N. Kamaev, V. A. Volodin, G. K. Krivyakin, “Vertical ordering of amorphous Ge nanoclusters in multilayer $a$-Ge/$a$-Si:H heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021), 13–16   ; Tech. Phys. Lett., 47:8 (2021), 609–612 |
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2020 |
| 2. |
M. P. Gambaryan, G. K. Krivyakin, S. G. Cherkova, M. Stoffel, H. Rinnert, M. Vergnat, V. A. Volodin, “Quantum size effects in germanium nanocrystals and amorphous nanoclusters in GeSi$_x$O$_y$ films”, Fizika Tverdogo Tela, 62:3 (2020), 434–441 ; Phys. Solid State, 62:3 (2020), 492–498 |
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| 3. |
G. K. Krivyakin, V. A. Volodin, G. N. Kamaev, A. A. Popov, “Effect of interfaces and thickness on the crystallization kinetics of amorphous germanium films”, Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 643–647 ; Semiconductors, 54:7 (2020), 754–758 |
4
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| 4. |
A. V. Kolchin, D. V. Shuleiko, A. V. Pavlikov, S. V. Zabotnov, L. A. Golovan, D. E. Presnov, V. A. Volodin, G. K. Krivyakin, A. A. Popov, P. K. Kashkarov, “Femtosecond laser annealing of multilayer thin-film structures based on amorphous germanium and silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 43–46 ; Tech. Phys. Lett., 46:6 (2020), 560–563 |
8
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2019 |
| 5. |
V. A. Volodin, G. K. Krivyakin, G. D. Ivlev, S. L. Prokopyev, S. V. Gusakova, A. A. Popov, “Crystallization of amorphous germanium films and multilayer $a$-Ge/$a$-Si structures upon exposure to nanosecond laser radiation”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 423–429 ; Semiconductors, 53:3 (2019), 400–405 |
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2018 |
| 6. |
V. A. Volodin, Zhang Rui, G. K. Krivyakin, A. Kh. Antonenko, M. Stoffel, H. Rinnert, M. Vergnat, “On the formation of IR-light-emitting Ge nanocrystals in Ge:SiO$_{2}$ films”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1056–1065 ; Semiconductors, 52:9 (2018), 1178–1187 |
4
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| 7. |
Zh. V. Smagina, V. A. Zinovyev, G. K. Krivyakin, E. E. Rodyakina, P. A. Kuchinskaya, B. I. Fomin, A. N. Yablonskii, M. V. Stepikhova, A. V. Novikov, A. V. Dvurechenskii, “Study of the structural and emission properties of Ge(Si) quantum dots ordered on the Si(001) surface”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1028–1033 ; Semiconductors, 52:9 (2018), 1150–1155 |
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| 8. |
I. E. Tyschenko, G. K. Krivyakin, V. A. Volodin, “Ion-beam synthesis of the crystalline Ge phase in SiO$_{x}$N$_{y}$ films upon annealing under high pressure”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 280–284 ; Semiconductors, 52:2 (2018), 268–272 |
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2017 |
| 9. |
G. K. Krivyakin, V. A. Volodin, A. A. Shklyaev, V. Mortet, J. More-Chevalier, P. Ashcheulov, Z. Remes, T. H. Stuchliková, J. Stuchlik, “Formation and study of $p$–$i$–$n$ structures based on two-phase hydrogenated silicon with a germanium layer in the $i$-type region”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1420–1425 ; Semiconductors, 51:10 (2017), 1370–1376 |
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2016 |
| 10. |
G. K. Krivyakin, V. A. Volodin, S. A. Kochubei, G. N. Kamaev, A. Purkrt, Z. Remes, R. Fajgar, T. H. Stuchliková, J. Stuchlik, “Optical properties of $p$–$i$–$n$ structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 952–957 ; Semiconductors, 50:7 (2016), 935–940 |
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