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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
E. A. Emelyanov, T. A. Del, M. O. Petrushkov, A. G. Nastovjak, A. A. Spirina, T. A. Gavrilova, B. R. Semyagin, A. V. Vasev, M. A. Putyato, V. V. Preobrazhenskii, “Arrays of quasi-one-dimensional GaAs nanocrystals grown on the oxidized surface of the Si/GaAs(001) heterostructure: effect of the Si epitaxial layer on the array structure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023), 37–41   |
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2020 |
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E. A. Emelyanov, A. G. Nastovjak, M. O. Petrushkov, M. Yu. Yesin, T. A. Gavrilova, M. A. Putyato, N. L. Shwartz, V. A. Shvets, A. V. Vasev, B. R. Semyagin, V. V. Preobrazhenskii, “A mask based on a Si epitaxial layer for the self-catalytic nanowire growth on GaAs (111)$B$ and GaAs (100) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020), 11–14 ; Tech. Phys. Lett., 46:2 (2020), 161–164 |
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2018 |
| 3. |
M. O. Petrushkov, M. A. Putyato, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, M. Yu. Yesin, T. A. Gavrilova, A. V. Vasev, V. V. Preobrazhenskii, “Zinc diffusion into InP via a narrow gap from a planar Zn$_{3}$P$_{2}$-based source”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:14 (2018), 19–25 ; Tech. Phys. Lett., 44:7 (2018), 612–614 |
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2015 |
| 4. |
V. A. Gaisler, A. V. Gaisler, A. S. Yaroshevich, I. A. Derebezov, M. M. Kachanova, Yu. A. Zhivodkov, T. A. Gavrilova, A. S. Medvedev, L. A. Nenasheva, K. V. Grachev, V. K. Sandyrev, A. S. Kozhukhov, V. M. Shayakhmetov, A. K. Kalagin, A. K. Bakarov, D. V. Dmitriev, A. I. Toropov, D. V. Shcheglov, A. V. Latyshev, A. L. Aseev, “Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 35–40 ; Semiconductors, 49:1 (2015), 33–38 |
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