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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
A. I. Mikhaylov, A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, S. A. Reshanov, A. Schöner, “High-power 4$H$-SiC mosfet with an epitaxial buried channel”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 79–84   ; Semiconductors, 54:1 (2020), 122–126 |
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2016 |
| 2. |
A. I. Mikhaylov, A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, S. A. Reshanov, A. Schöner, “Method for increasing the carrier mobility in the channel of the 4$H$-SiC MOSFET”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 839–842 ; Semiconductors, 50:6 (2016), 824–827 |
| 3. |
A. I. Mikhaylov, A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, T. Sledziewski, S. A. Reshanov, A. Schöner, M. Krieger, “Specific features of the current–voltage characteristics of SiO$_{2}$/4$H$-SiC MIS structures with phosphorus implanted into silicon carbide”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 103–105 ; Semiconductors, 50:1 (2016), 103–105 |
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2014 |
| 4. |
A. I. Mikhaylov, A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, S. A. Reshanov, M. Krieger, A. Schöner, T. Sledziewski, “On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO$_2$ produced by thermal oxidation in dry oxygen”, Fizika i Tekhnika Poluprovodnikov, 48:12 (2014), 1621–1625 ; Semiconductors, 48:12 (2014), 1581–1585 |
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