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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
V. V. Bolotov, K. E. Ivlev, E. V. Knyazev, I. V. Ponomareva, V. E. Roslikov, “Formation of multilayer structures with integrated membranes based on porous silicon”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 504–509 ; Semiconductors, 54:5 (2020), 609–613 |
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2019 |
| 2. |
Yu. A. Sten'kin, V. V. Bolotov, D. V. Sokolov, V. E. Roslikov, K. E. Ivlev, “Synthesis and gas-sensing properties of MnO$_{2-x}$ and MnO$_{2-x}$/CuO-coated multiwalled carbon nanotube nanocomposites”, Fizika Tverdogo Tela, 61:11 (2019), 2240–2243 ; Phys. Solid State, 61:11 (2019), 2224–2227 |
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2017 |
| 3. |
V. V. Bolotov, E. V. Knyazev, I. V. Ponomareva, V. E. Kan, N. A. Davletkildeev, K. E. Ivlev, V. E. Roslikov, “Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 51–55 ; Semiconductors, 51:1 (2017), 49–53 |
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2014 |
| 4. |
V. V. Bolotov, V. E. Roslikov, E. A. Roslikova, K. E. Ivlev, E. V. Knyazev, N. A. Davletkildeev, “Formation of two-layer composite-on-insulator structures based on porous silicon and SnO$_x$. Study of their electrical and gas-sensing properties”, Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 412–416 ; Semiconductors, 48:3 (2014), 397–401 |
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2013 |
| 5. |
V. V. Bolotov, V. E. Kan, R. K. Makyshenko, M. Yu. Biryukov, K. E. Ivlev, V. E. Roslikov, “Study of the interaction mechanisms between absorbed NO$_2$ and por-Si/SnO$_x$ nanocomposite layers”, Fizika i Tekhnika Poluprovodnikov, 47:10 (2013), 1371–1375 ; Semiconductors, 47:10 (2013), 1362–1366 |
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2012 |
| 6. |
V. V. Bolotov, V. E. Roslikov, E. A. Kurdyukova, O. V. Krivozubov, Yu. A. Sten'kin, D. V. Cheredov, “Electrical and gas sensing properties of por-Si/SnO$_x$ nanocomposite layers”, Fizika i Tekhnika Poluprovodnikov, 46:1 (2012), 109–112 ; Semiconductors, 46:1 (2012), 105–108 |
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2011 |
| 7. |
V. V. Bolotov, N. A. Davletkildeev, A. A. Korotenko, V. E. Roslikov, Yu. A. Sten'kin, “Spectroscopic ellipsometry study of porous silicon-tin oxide nanocomposite layers”, Zhurnal Tekhnicheskoi Fiziki, 81:11 (2011), 52–57 ; Tech. Phys., 56:11 (2011), 1593–1598 |
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